SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features ■ ■ ■ ■ TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications ■ Battery management ■ High speed switch ■ Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol 3 d g 1 2 Top view MSB003 SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. MBB076 s SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150 °C − 20 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V − 2.5 A Ptot total power dissipation Tsp = 25 °C − 0.83 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 4.5 V; ID = 3.6 A 56 85 mΩ VGS = 2.5 V; ID = 3.1 A 77 115 mΩ Min Max Unit 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions Tj = 25 to 150 °C − 20 V − ±8 V Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 − 2.5 A Tsp = 70 °C; VGS = 4.5 V; Figure 2 − 2 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 10 A Ptot total power dissipation Tsp = 25 °C; Figure 1 − 0.83 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C − 0.7 A Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data Rev. 02 — 20 November 2001 2 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa17 03aa25 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 0 50 100 150 0 200 o 50 100 150 o 200 Tsp ( C) Tsp ( C) P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 03ae92 102 ID (A) RDSon = VDS / ID 10 tp = 10 µs 1 ms 1 10 ms DC 10-1 100 ms 10-2 10-1 1 102 10 VDS (V) Tsp = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data Rev. 02 — 20 November 2001 3 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-sp) Conditions Value Unit thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W 7.1 Transient thermal impedance 03ae91 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 10 0.05 δ= P tp T 0.02 single pulse t tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Tsp = 25 °C Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data Rev. 02 — 20 November 2001 4 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ID = 10 µA; VGS = 0 V 20 − − V 0.65 − − V Tj = 25 °C − 0.01 1.0 µA Tj = 55 °C − − 10 µA Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 IDSS drain-source leakage current VDS = 20 V; VGS = 0 V IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V − 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8 − 56 85 mΩ VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8 − 77 115 mΩ Dynamic characteristics gfs forward transconductance VDS = 5 V; ID = 3.6 A − 8 − S Qg(tot) total gate charge VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13 − 5.4 10 nC Qgs gate-source charge − 0.65 − nC Qgd gate-drain (Miller) charge − 1.6 − nC Ciss input capacitance − 230 − pF Coss output capacitance − 125 − pF Crss reverse transfer capacitance − 80 − pF td(on) turn-on delay time − 12 20 ns VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 VDD = 10 V; RL = 5.5 Ω; VGS = 4.5 V; RG = 6 Ω tr rise time − 23 35 ns td(off) turn-off delay time − 50 100 ns tf fall time − 34 50 ns − 0.8 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data Rev. 02 — 20 November 2001 5 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 03ae93 10 4.5 V 3 V ID (A) 03ae95 10 ID (A) 8 2.5 V 8 VDS > ID x RDSon 2V 6 6 4 4 2 VGS = 1.5V 2 Tj = 150 ºC 25 ºC 0 0 0 0.5 1 VDS (V) 0 1.5 Tj = 25 °C 2 VGS (V) 3 Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ae94 0.1 RDSon 1 Tj = 25 ºC VGS = 2.5 V 03ad57 2 a (Ω) 0.09 1.6 1.2 0.08 3V 0.8 0.07 4.5 V 0.06 0.4 0 0.05 0 2 4 6 8 I (A) 10 D Tj = 25 °C -60 0 60 120 Tj (ºC) 180 R DSon a = --------------------------R ° DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data Rev. 02 — 20 November 2001 6 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 03ag05 03ah78 10-1 1.2 ID (A) 10-2 VGS(th) (V) typ 0.8 10-3 min min typ 10-4 0.4 10-5 10-6 0 -60 0 60 120 0 180 0.4 Tj (ºC) 0.8 VGS (V) 1.2 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ae98 103 C (pF) Ciss 102 Coss Crss 10 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data Rev. 02 — 20 November 2001 7 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 03ae97 10 IS (A) 8 VGS = 0 V 03ae99 5 VGS ID = 3.6 A (V) 4 Tj = 25 ºC VDD = 10 V 6 3 4 2 2 1 150 ºC Tj = 25 ºC 0 0 0 0.4 0.8 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V 0 2 3 4 5 QG (nC) 6 ID = 3.6 A; VDD = 10 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data 1 Rev. 02 — 20 November 2001 8 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ TO-236AB EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Fig 14. SOT23. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data Rev. 02 — 20 November 2001 9 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 02 20011120 CPCN Description - Includes product data; second version; supersedes initial version 03 september 2001. • • • 01 20010903 - Table 5 “Characteristics” Correction to VGS(th) conditions. Figure 9 Correction to curves. Figure 10 Correction to curves. Product specification; initial version. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Product data Rev. 02 — 20 November 2001 10 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 09107 Rev. 02 — 20 November 2001 11 of 12 Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 November 2001 Document order number: 9397 750 09107