MICROSEMI TD3165

2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
TD3165
Solar Array Blocking Diode
Features
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Very Thin Construction
Passivated mesa structure for very low leakage reverse currents
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, extremely low profile ceramic seal package
Diode assembly has matched thermal coefficient of expansion
Weldable / Solderable interconnects
200 Volts
10 Amps
Applications
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Designed for Solar Cell protection from plasma ESD
Extreme Temperature Cycling environments
Generically similar to product used on the International Space Station Alpha
Electrical Characteristics @ 25oC
SYMBOL
IR
VF1
VF2
VF3
VF4
VF5
BVR
CHARACTERISTIC
Reverse (Leakage) Current
Forward Voltage
Forward Voltage
Forward Voltage
Forward Voltage
Forward Voltage
Breakdown Voltage
Junction Temperature Range -100 to +175 oC
CONDITIONS
MAX
VR = 180 Vdc
0.5
IF = 0.1 A pulse test pw=300ms, d/c<2%
710
IF = 0.5 A pulse test pw=300ms, d/c<2%
775
IF = 2.0 A pulse test pw=300ms, d/c<2%
850
IF = 5.0 A pulse test pw=300ms, d/c<2%
875
IF = 10 A pulse test pw=300ms, d/c<2%
950
IR = 100 uA
(min) 200
Mechanical Outline
Screening
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Temperature Cycling
High Temperature Reverse Bias
Power Burn-In
Electrical Cycling
Hermeticity
Qualification
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Humidity Testing
Thermal Cycling (20,000 cycles)
Bond Strength
Electrical Cycling
ESD
MSC1048.PDF
Updated: November 1998
UNITS
uAmps
mVolts
mVolts
mVolts
mVolts
mVolts
Volts