Data Sheet Schottky Barrier Diode RB451F Dimensions (Unit : mm) Applications Low current rectification Land size figure (Unit : mm) 1.3 2.0±0.2 0.15± 0.05 0.9MIN. 0.65 1.25±0.1 2.1±0.1 (3) Features 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. 1.6 0.3± 0.1 各リ ード とも Each lead has same dimensions 同寸 法 0.8MIN 0～0.1 (1) （0.65） UMD3 0.1Min (2) （ 0.65） 0.7± 0.1 1.3±0.1 0.9± 0.1 Structure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) Construction Silicon epitaxial planer Taping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. φ0.5±0.05 4.0±0.1 Limits 40 40 100 1 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 2.4±0.1 8.0±0.2 0～0.1 2.4±0.1 2.25±0.1 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Unit V V mA A °C °C Conditions Symbol VF 1 VF 2 IR Min. Typ. Max. Unit - - 0.55 0.34 30 V V μA IF=100mA IF=10mA VR=10V Ct - 6.0 - pF VR=10V , f=1MHz 1/3 2011.04 - Rev.B Data Sheet RB451F 10000 REVERSE CURRENT:IR(uA) Ta=25℃ 1 Ta=-25℃ 0.1 0.01 f=1MHz 1000 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 450 440 430 290 280 270 VF DISPERSION MAP 15 10 5 AVE:0.928uA 0 IR DISPERSION MAP 12 10 8 6 4 AVE:5.81pF 30 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 14 1cyc Ifsm 15 8.3ms 10 5 AVE:5.50A Ct DISPERSION MAP 20 15 10 5 AVE:6.20nS 0 trr DISPERSION MAP IFSM DISRESION MAP 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ifsm 8.3ms 8.3ms 1cyc 5 0 1000 Ifsm t 10 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 0 0 0.1 20 20 Ta=25℃ f=1MHz VR=10V n=10pcs 16 Ta=25℃ VR=10V n=10pcs 25 VF DISPERSION MAP 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 260 18 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:281.5mV 420 10 0 35 Ta=25℃ IF=10mA n=30pcs 300 AVE:439.5mV PEAK SURGE FORWARD CURRENT:IFSM(A) 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE CURRENT:IR(uA) 460 2 5 310 Ta=25℃ IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD CURRENT:IF(mA) Ta=75℃ 10 100 Ta=125℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 2/3 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA 10 1ms IF=100mA time 300us 1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 2011.04 - Rev.B Data Sheet RB451F 0.1 0.07 REVERSE POWER DISSIPATION:PR (W) DC D=1/2 0.06 Sin(θ＝180) 0.04 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 FORWARD POWER DISSIPATION:Pf(W) 0.3 0.06 0.05 0.04 Sin(θ＝180) 0.03 D=1/2 0.02 DC 0.01 0 0 0 0.1 0.2 0.2 DC Io t T VR D=t/T VR=15V Tj=125℃ 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0A 0V 0.25 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.25 0.2 Io t DC 0.15 T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A