RSX101M-30 Diodes Schottky barrier diode RSX101M-30 z Land size figure (Unit : mm) z Dimensions (Unit : mm) zApplications General rectification 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low VF, Low IR. 3) High reliability. PMDU zStructure zConstruction Silicon epitaxial planar 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date z Taping specifications (Unit : mm) 4.0±0.1 1.81±0.1 8.0±0.2 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 φ1.0±0.1 1.5MAX zAbsolute maximum ratings (Ta=25°C) Param eter Sym bol Lim its Unit Revers e voltage (repetitive peak) VRM 30 V Revers e voltage (DC) VR 30 V Average rectified forward current Forward current s aurge peak (60Hz・ 1cyc ） Io IFSM 1 45 A Junction tem perature Tj 150 ℃ Storage tem perature Ts tg -40 to +150 ℃ A (*1)Mounted on epoxy board. 180°Half s ine wave zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals ESD breakdown voltage Symbol VF IR Ct ESD Min. - Typ. 0.35 90 60.0 12.0 Max. 0.39 200 - Unit V µA pF kV Conditions IF=1A VR=30V VR=10V , f=1MHz C=200pF ,R=0Ω Rev.C 1/3 RSX101M-30 Diodes zElectrical characteristic curves (Ta=25°C) 0.1 Ta=25℃ Ta=-25℃ 0.01 Ta=150℃ 100000 REVERSE CURRENT:IR(uA) 10000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 1 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 500 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 360 350 340 AVE:349.9mV 800 700 600 500 400 300 AVE:103.1uA 200 320 310 300 290 280 270 260 0 250 VF DISPERSION MAP AVE:300.1pF IR DISPERSION MAP 200 Ct DISPERSION MAP 100 Ifsm RESERVE RECOVERY TIME:trr(ns) 30 150 330 100 330 1cyc 8.3ms 100 50 AVE:66.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:8.30ns 90 Ifsm 80 70 8.3ms 8.3ms 1cyc 60 50 40 30 20 10 0 0 0 1 1000 Rth(j-a) 100 t 60 50 40 30 20 10 0 1 IF=0.5A 1ms 0.8 time 300us Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.001 D=1/2 0.6 Sin(θ＝180) 0.4 DC 0.2 0 0.1 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 70 100 Mounted on epoxy board IM=10mA 90 80 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISPERSION MAP 100 30 Ta=25℃ f=1MHz VR=0V n=10pcs 340 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 350 Ta=25℃ VR=30V n=30pcs 900 REVERSE CURRENT:IR(uA) Ta=25℃ IF=1A n=30pcs 10 30 1000 380 100 1 0.1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=125℃ PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=75℃ Ta=150℃ 0.001 FORWARD VOLTAGE:VF(mV) 1000 1000000 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.C 2 2/3 RSX101M-30 Diodes 3 3 1.5 1 D=1/2 DC 0.5 Sin(θ＝180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0A 0V 2.5 2 DC Io t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 2 VR D=t/T VR=15V Tj=150℃ 1.5 D=1/2 1 0.5 Sin(θ＝180) 0A 0V 2.5 Io t 2 DC T 1.5 VR D=t/T VR=15V Tj=150℃ D=1/2 1 0.5 Sin(θ＝180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:10.8kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0