ROHM RF505B6S_11

Data Sheet
Super Fast Recovery Diode
RF505B6S
Dimensions（Unit : mm）
Series
Land size figure (Unit : mm)
6.0
(2)
Applications
General rectification
1.6
1.6
(3)
(1)
Features
1)Power mold type. (CPD)
2)High switching speed
3)Low Reverse current
CPD
3.0 2.0
6.0
Standard Fast Recovery
2.3 2.3
Structure
(2)
Production month
Construction
Silicon epitaxial planar
(1)
(3)
Taping dimensions（Unit : mm）
Absolute maximum ratings（Tc=25C）
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak Reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Duty0.5
Direct voltage
Io
60Hz half sin wave,resistive load Tc=42C
600
600
5
V
V
A
Forward current surge peak
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25 C
50
A
Junction temperature
Storage temperature
Tj
Tstg
150
55 to 150
C
C
Electrical characteristics（Tj=25C）
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
IF=5.0A
-
1.3
1.7
V
Forward voltage
VF
Reverse current
IR
VR=600V
-
0.05
10
μA
trr
IF=0.5A,IR=1A,Irr=0.25×IR
Rth(j-l)
junction to lead
-
22
－
30
12
C/W
Reverse recovery time
Thermal resistance
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
ns
2011.05 - Rev.A
Data Sheet
RF505B6S
Electrical characteristic curves
100000
100
f=1MHz
Tj=150C
1
Tj=25C
0.1
Tj=75C
10000
Tj=125C
100
Tj=25C
10
100
10
1
1000
1500
2000
2500
100
200
300
400
500
1400
0
REVERSE CURRENT:IR(nA)
1300
1250
1200
AVE:33.7nA
10
REVERSE RECOVERY TIME:trr(ns)
8.3ms
150
100
AVE:107.5A
50
0
Tj=25C
f=1MHz
VR=0V
n=10pcs
150
AVE:150.6pF
140
1000
25
20
AVE:22.0ns
Tj=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
15
10
5
100
Ifsm
10
8.3ms
1
1
IFSM DISRESION MAP
30
On glass-epoxy board
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
25
t
20
15
AVE:19.9kV
10
5
0
10
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
100
100
No break at 30kV
PEAK SURGE
FORWARD CURRENT:I FSM(A)
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
Ifsm
8.3ms
1cyc
0
1000
30
Ct DISPERSION MAP
30
1cyc
25
160
IR DISPERSION MAP
Ifsm
20
120
VF DISPERSION MAP
300
15
130
1
1100
1
10
170
Tj=25C
VR=600V
n=20pcs
AVE:1297mV
200
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
Tj=25C
IF=5A
n=20pcs
1350
250
600
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1150
1
0
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
500
PEAK SURGE
FORWARD CURRENT:I FSM(A)
0
FORWARD VOLTAGE:V F(mV)
Tj=75C
1000
0.01
PEAK SURGE
FORWARD CURRENT:I FSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
Tj=125C
10
1000
Tj=150C
2/3
Rth(j-a)
10
Rth(j-c)
IM=100mA
IF=1.5A
1
1ms
time
300us
0.1
0.001
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
2011.05 - Rev.A
Data Sheet
RF505B6S
0A
Io
0V
VR
t
7
5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
half sin wave
D=0.2
D=0.1
4
D.C.
8
D=0.5 D=0.8
D=0.05
3
2
1
D=0.8
7
Io
0V
VR
t
6
T
5
D=t/T
VR=480V
Tj=150C
D=0.5
half sin wave
4
3
D=0.2
2
D=0.1
D=0.05
1
0
0A
2
4
6
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
8
D=t/T
VR=480V
Tj=150C
D.C.
7
D=0.8
D=0.5
6
5
half sin wave
4
3
D=0.2
2
D=0.1
D=0.05
1
0
0
0
T
8
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D.C.
6
FORWARD POWER
DISSIPATION:Pf(W)
9
9
0
30
60
90
120
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
3/3
150
0
30
60
90
120
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
2011.05 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A