DISCRETE SEMICONDUCTORS DATA SHEET BSP145 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 24 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 FEATURES • Direct interface to C-MOS, TTL, etc. • High speed switching d 4 handbook, halfpage • No secondary breakdown. APPLICATIONS g • Intended for applications in relay, high speed and line transformer drivers. 1 DESCRIPTION 2 s 3 N-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. Top view PINNING - SOT223 Fig.1 Simplified outline and symbol. PIN SYMBOL 1 g gate 2 d drain 3 s source 4 d drain MAM054 DESCRIPTION CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage − 450 V VGSO gate-source voltage open drain − ±20 V VGSth gate-source threshold voltage ID = 1 mA; VDS = VGS 3 4 V ID drain current − 250 mA RDSon drain-source on-state resistance ID = 100 mA; VGS = 10 V 10 14 Ω Ptot total power dissipation up to Tamb = 25 °C − 1.5 W 1995 Apr 24 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 450 V − ±20 V − 250 mA − 1 A − 1.5 W storage temperature −65 +150 °C operating junction temperature − 150 °C VDS drain-source voltage VGSO gate-source voltage ID drain current IDM peak drain current Ptot total power dissipation Tstg Tj open drain up to Tamb = 25 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 83.3 K/W note 1 Note to the “Limiting values” and “Thermal characteristics” 1. Device mounted on an epoxy printed-circuit board, 40 × 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 µA 450 − − V VGSth gate-source threshold voltage VDS = VGS ; ID = 1 mA 2 3 4 V IDSS drain-source leakage current VGS = 0; VDS = 350 V − − 1 µA IGSS gate leakage current VDS = 0; VGS = ±20 V − − ±100 nA RDSon drain-source on-state resistance VGS = 10 V; ID = 100 mA − 10 14 Ω yfs forward transfer admittance VDS = 25 V; ID =250 mA 200 − − mS Ciss input capacitance VGS = 0; VDS = 25 V; f = 1 MHz − 90 120 pF Coss output capacitance VGS = 0; VDS = 25 V; f = 1 MHz − 25 35 pF Crss reverse transfer capacitance VGS = 0; VDS = 25 V; f = 1 MHz − 2 5 pF Switching times (see Figs 2 and 3) ton turn-on time VGS = 0 to 10 V; VDD = 200 V; ID = 100 mA − − 10 ns toff turn-off time VGS = 10 to 0 V; VDD =200 V; ID = 100 mA − − 100 ns 1995 Apr 24 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 VDD = 50 V handbook, halfpage handbook, halfpage 90 % INPUT 10 % 10 V 0V 90 % ID OUTPUT 50 Ω 10 % MSA631 ton toff MBB692 Fig.2 Switching time test circuit. Fig.3 Input and output waveforms. MRC207 2 MGC433 1 handbook, halfpage handbook, halfpage Ptot (W) ID (1) tp = 10 µs 100 µs 1 ms (A) 1.5 10 1 10 ms 100 ms 1 10 tp δ= T P 2 1s 0.5 DC t tp T 0 0 50 100 Tamb (°C) 10 150 3 1 10 10 2 δ = 0.01. Tamb = 25 °C. (1) RDSon limitation. Fig.4 Power derating curve. 1995 Apr 24 Fig.5 DC SOAR. 4 V DS (V) 10 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 MGC431 MGC436 120 1 handbook, halfpage handbook, halfpage VGS = 10 V ID (A) C (pF) 6V 0.8 80 C iss 5V 0.6 0.4 4.5 V 0.2 4V 40 Coss C rss 0 0 10 20 V DS (V) 0 30 0 4 8 12 16 V DS (V) VGS = 0. Tj = 25 °C. f = 1 MHz. Tj = 25 °C. Fig.6 Capacitance as a function of drain source voltage; typical values. Fig.7 Typical output characteristics. MGC438 MGC435 30 1 handbook, halfpage handbook, halfpage R DS ID (A) on (Ω) 0.5 15 0 0 5 V GS (V) 0 10 0 5 VGS (V) 10 ID = 10 mA. Tj = 25 °C. VDS = 10 V. Tj = 25 °C. Fig.9 Fig.8 Typical transfer characteristics. 1995 Apr 24 5 Drain-source on-state resistance as a function of gate-source voltage; typical values. Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 MGC437 60 R DS MGC434 1.2 handbook, halfpage handbook, halfpage VGS = 4 V 4.5 V 5 V on k (Ω) 1.0 40 6V 20 0.8 10 V 0 3 10 10 2 10 1 0.6 1 I D (A) 50 50 T j ( o C) 150 V GSth at T j k = ---------------------------------------V GSth at 25 °C Tj = 25 °C. ID = 1 mA; VDS = VGS. Fig.10 Drain-source on-state resistance as a function of drain current; typical values. Fig.11 Temperature coefficient of gate-source threshold voltage. MLC695 2.5 handbook, halfpage k 2 1.5 1 0.5 0 −50 0 50 100 150 Tj (°C) R DSon at T j k = ---------------------------------------R DSon at 25 °C Fig.12 Temperature coefficient of drain-source on-state resistance. 1995 Apr 24 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor 2 10pagewidth handbook, full R th j-a (K/W) BSP145 MGC432 δ= 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 tp δ= T P t tp T 10 0 1 10 6 10 5 10 4 10 3 10 2 10 1 1 10 10 2 t p (s) Tamb = 25 °C. Fig.13 Thermal resistance from junction to ambient as a function of pulse time; typical values. 1995 Apr 24 7 10 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 PACKAGE OUTLINE 0.95 0.85 andbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 1 2 10 max 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.14 SOT223. 1995 Apr 24 7.3 6.7 o o 1.80 max 0.2 M A 8 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 24 9