PHILIPS 74LVC1G17GW

INTEGRATED CIRCUITS
DATA SHEET
74LVC1G17
Single Schmitt-trigger buffer
Product specification
Supersedes data of 2004 Oct 18
2004 Nov 30
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
FEATURES
DESCRIPTION
• Wide supply voltage range from 1.65 V to 5.5 V
The 74LVC1G17 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
• High noise immunity
• Complies with JEDEC standard:
The input can be driven from either 3.3 V or 5 V devices.
This feature allows the use of this device in a mixed
3.3 V and 5 V environment.
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
– JESD8B/JESD36 (2.7 V to 3.6 V).
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
• ±24 mA output drive (VCC = 3.0 V)
• CMOS low power consumption
• Latch-up performance exceeds 250 mA
• Direct interface with TTL levels
The 74LVC1G17 provides a buffer function with
Schmitt-trigger action. It is capable of transforming slowly
changing input signals into sharply defined outputs.
• Unlimited rise and fall times
• Input accepts voltages up to 5 V
• ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
• Multiple package options
• Specified from −40 °C to +85 °C and −40 °C to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 2.5 ns.
SYMBOL
tPHL/tPLH
PARAMETER
propagation delay A to Y
CONDITIONS
TYPICAL
UNIT
VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ
4.1
ns
VCC = 2.5 V; CL = 30 pF; RL = 500 Ω
2.8
ns
VCC = 3.3 V; CL = 50 pF; RL = 500 Ω
3.0
ns
VCC = 5.0 V; CL = 50 pF; RL = 500 Ω
2.2
ns
CI
input capacitance
5
pF
CPD
power dissipation capacitance per buffer notes 1 and 2
16.6
pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
2004 Nov 30
2
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
FUNCTION TABLE
See note 1.
INPUT
OUTPUT
A
Y
L
L
H
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
TEMPERATURE
RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74LVC1G17GW
−40 °C to +125 °C
5
SC-88A
plastic
SOT353
VJ
74LVC1G17GV
−40 °C to +125 °C
5
SC-74A
plastic
SOT753
V17
74LVC1G17GM
−40 °C to +125 °C
6
XSON6
plastic
SOT886
VJ
PIN SC-88A; SC-74A
PIN XSON6
SYMBOL
1
1
n.c.
not connected
2
2
A
data input A
3
3
GND
ground (0 V)
4
4
Y
data output Y
PINNING
DESCRIPTION
-
5
n.c.
not connected
5
6
VCC
supply voltage
17
n.c.
1
A
2
GND
3
5
VCC
17
4
Y
001aab808
n.c.
1
6
VCC
A
2
5
n.c.
GND
3
4
Y
001aab809
Transparent top view
Fig.1 Pin configuration SC-88A and SC-74A.
2004 Nov 30
Fig.2 Pin configuration XSON6.
3
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
handbook, halfpage
2
A
Y
handbook, halfpage
2
4
MNB151
MNB150
Fig.3 Logic symbol.
handbook, halfpage
A
Fig.4 IEEE/IEC logic symbol.
Y
MNB152
Fig.5 Logic diagram.
2004 Nov 30
4
4
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
5.5
V
Tamb
operating ambient temperature
−40
+125
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+6.5
V
IIK
input diode current
VI < 0 V
−
−50
mA
VI
input voltage
note 1
−0.5
+6.5
V
IOK
output diode current
VO > VCC or VO < 0 V
−
±50
mA
VO
output voltage
active mode; notes 1 and 2
−0.5
VCC + 0.5 V
Power-down mode; notes 1 and 2 −0.5
+6.5
V
IO
output source or sink current
−
±50
mA
ICC, IGND
VCC or GND current
−
±100
mA
Tstg
storage temperature
−65
+150
°C
Ptot
total power dissipation
−
250
mW
VO = 0 V to VCC
Tamb = −40 °C to +125 °C
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
2004 Nov 30
5
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC (V)
OTHER
Tamb = −40 °C to +85 °C; note 1
VOL
VOH
LOW-level output voltage VI = VCC or GND
HIGH-level output
voltage
IO = 100 µA
1.65 to 5.5
−
−
0.1
V
IO = 4 mA
1.65
−
−
0.45
V
IO = 8 mA
2.3
−
−
0.3
V
IO = 12 mA
2.7
−
−
0.4
V
IO = 24 mA
3.0
−
−
0.55
V
IO = 32 mA
4.5
−
−
0.55
V
IO = −100 µA
1.65 to 5.5
VCC − 0.1
−
−
V
IO = −4 mA
1.65
1.2
−
−
V
IO = −8 mA
2.3
1.9
−
−
V
IO = −12 mA
2.7
2.2
−
−
V
IO = −24 mA
3.0
2.3
−
−
V
VI = VCC or GND
IO = −32 mA
4.5
3.8
−
−
V
ILI
input leakage current
VI = 5.5 V or GND
3.6
−
±0.1
±5
µA
Ioff
power OFF leakage
current
VI or VO = 5.5 V
0
−
±0.1
±10
µA
ICC
quiescent supply current
VI = VCC or GND;
IO = 0 A
5.5
−
0.1
10
µA
∆ICC
additional quiescent
supply current per pin
VI = VCC − 0.6 V;
IO = 0 A
2.3 to 5.5
−
5
500
µA
2004 Nov 30
6
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC (V)
OTHER
Tamb = −40 °C to +125 °C
VOL
VOH
LOW-level output voltage VI = VCC or GND
HIGH-level output
voltage
IO = 100 µA
1.65 to 5.5
−
−
0.1
V
IO = 4 mA
1.65
−
−
0.7
V
IO = 8 mA
2.3
−
−
0.45
V
IO = 12 mA
2.7
−
−
0.6
V
IO = 24 mA
3.0
−
−
0.8
V
IO = 32 mA
4.5
−
−
0.8
V
VI = VCC or GND
IO = −100 µA
1.65 to 5.5
VCC − 0.1
−
−
V
IO = −4 mA
1.65
0.95
−
−
V
IO = −8 mA
2.3
1.7
−
−
V
IO = −12 mA
2.7
1.9
−
−
V
IO = −24 mA
3.0
2.0
−
−
V
IO = −32 mA
4.5
3.4
−
−
V
ILI
input leakage current
VI = 5.5 V or GND
3.6
−
−
±100
µA
Ioff
power OFF leakage
current
VI or VO = 5.5 V
0
−
−
±200
µA
ICC
quiescent supply current
VI = VCC or GND;
IO = 0 A
5.5
−
−
200
µA
∆ICC
additional quiescent
supply current per pin
VI = VCC − 0.6 V;
IO = 0 A
2.3 to 5.5
−
−
5000
µA
Note
1. All typical values are measured at maximum VCC and Tamb = 25 °C.
2004 Nov 30
7
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
TRANSFER CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC (V)
OTHER
Tamb = −40 °C to +85 °C; note 1
VT+
VT−
VH
positive-going threshold
voltage
negative-going threshold
voltage
hysteresis voltage
(VT+ − VT−)
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
1.8
0.82
1.0
1.14
V
2.3
1.03
1.2
1.40
V
3.0
1.29
1.5
1.71
V
4.5
1.84
2.1
2.36
V
5.5
2.19
2.5
2.79
V
1.8
0.46
0.6
0.75
V
2.3
0.65
0.8
0.96
V
3.0
0.88
1.0
1.24
V
4.5
1.32
1.5
1.84
V
5.5
1.58
1.8
2.24
V
1.8
0.26
0.4
0.51
V
2.3
0.28
0.4
0.57
V
3.0
0.31
0.5
0.64
V
4.5
0.40
0.6
0.77
V
5.5
0.47
0.6
0.88
V
Tamb = −40 °C to +125 °C
VT+
VT−
VH
positive-going threshold
voltage
negative-going threshold
voltage
hysteresis voltage
(VT+ − VT−)
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
1.8
0.79
−
1.14
V
2.3
1.00
−
1.40
V
3.0
1.26
−
1.71
V
4.5
1.81
−
2.36
V
5.5
2.16
−
2.79
V
1.8
0.46
−
0.78
V
2.3
0.65
−
0.99
V
3.0
0.88
−
1.27
V
4.5
1.32
−
1.87
V
5.5
1.58
−
2.27
V
1.8
0.19
−
0.51
V
2.3
0.22
−
0.57
V
3.0
0.25
−
0.64
V
4.5
0.34
−
0.77
V
5.5
0.41
−
0.88
V
Note
1. All typical values are measured at Tamb = 25 °C.
2004 Nov 30
8
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
TRANSFER CHARACTERISTIC WAVEFORMS
VO
handbook, halfpage
VI
VT−
mnb154
Fig.7 Definitions of VT+, VT− and VH.
MNA641
10
I CC
handbook, halfpage
(mA)
8
6
4
2
0
1
2
VI (V)
3
VCC = 3.0 V.
Fig.8
Typical transfer characteristics.
2004 Nov 30
VH
MNB155
VT+
Fig.6 Transfer characteristic.
0
VT−
VO
VI
VH
VT+
9
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
AC CHARACTERISTICS
GND = 0 V.
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC (V)
OTHER
Tamb = −40 °C to +85 °C; note 1
tPHL/tPLH
propagation delay A to Y
see Figs 9 and 10
1.65 to 1.95 1.0
4.1
11.0
ns
2.3 to 2.7
0.7
2.8
6.5
ns
2.7
0.7
3.2
6.5
ns
3.0 to 3.6
0.7
3.0
5.5
ns
4.5 to 5.5
0.7
2.2
5.0
ns
Tamb = −40 °C to +125 °C
tPHL/tPLH
propagation delay A to Y
see Figs 9 and 10
1.65 to 1.95 1.0
−
14.0
ns
2.3 to 2.7
0.7
−
8.5
ns
2.7
0.7
−
8.5
ns
3.0 to 3.6
0.7
−
7.0
ns
4.5 to 5.5
0.7
−
6.5
ns
Note
1. All typical values are measured at Tamb = 25 °C.
AC WAVEFORMS
VI
handbook, halfpage
VM
A input
GND
t PHL
t PLH
VOH
VM
Y output
VOL
MNB153
INPUT
VCC
VM
VI
tr = tf
1.65 V to 1.95 V
0.5 × VCC
VCC
≤ 2.0 ns
2.3 V to 2.7 V
0.5 × VCC
VCC
≤ 2.0 ns
2.7 V
1.5 V
2.7 V
≤ 2.5 ns
3.0 V to 3.6 V
1.5 V
2.7 V
≤ 2.5 ns
4.5 V to 5.5 V
0.5 × VCC
VCC
≤ 2.5 ns
VOL and VOH are typical output voltage drop that occur with the output load.
Fig.9 Input A to output Y propagation delay times.
2004 Nov 30
10
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
VEXT
VCC
PULSE
GENERATOR
VI
RL
VO
D.U.T.
CL
RT
RL
mna616
VCC
VEXT
CL
RL
VCC
30 pF
1 kΩ
open
GND
2 × VCC
2.3 V to 2.7 V
VCC
30 pF
500 Ω
open
GND
2 × VCC
2.7 V
2.7 V
50 pF
500 Ω
open
GND
6V
3.0 V to 3.6 V
2.7 V
50 pF
500 Ω
open
GND
6V
4.5 V to 5.5 V
VCC
50 pF
500 Ω
open
GND
2 × VCC
1.65 V to 1.95 V
VI
tPLH/tPHL
tPZH/tPHZ
tPZL/tPLZ
Definitions for test circuit:
RL = Load resistor.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.10 Load circuitry for switching times.
APPLICATION INFORMATION
MNB156
50
handbook, halfpage
ICC
(mA)
(1)
40
30
20
(2)
10
0
2
3
(1) Positive-going edge.
(2) Negative-going edge.
4
5
VCC (V)
6
Linear change of VI between 0.8 V to 2.0 V.
Fig.11 Average supply current as a function of supply voltage.
2004 Nov 30
11
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
PACKAGE OUTLINES
Plastic surface mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.3
0.2
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
2004 Nov 30
REFERENCES
IEC
JEDEC
JEITA
SC-88A
12
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-11-16
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
Plastic surface mounted package; 5 leads
SOT753
D
E
B
y
A
X
HE
5
v M A
4
Q
A
A1
c
1
2
3
Lp
detail X
bp
e
w M B
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.100
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT753
2004 Nov 30
REFERENCES
IEC
JEDEC
JEITA
SC-74A
13
EUROPEAN
PROJECTION
ISSUE DATE
02-04-16
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L1
e
6
5
e1
4
e1
6×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
1.5
1.4
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
OUTLINE
VERSION
SOT886
2004 Nov 30
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-07-15
04-07-22
MO-252
14
Philips Semiconductors
Product specification
Single Schmitt-trigger buffer
74LVC1G17
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Nov 30
15
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
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Printed in The Netherlands
R20/04/pp16
Date of release: 2004
Nov 30
Document order number:
9397 750 14375