PHILIPS PMBFJ108

DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
FEATURES
• High-speed switching
• Interchangeability of drain and
source connections
• Low RDSon at zero gate voltage
( < 8 Ω for PMBFJ108).
handbook, halfpage
3
DESCRIPTION
g
Symmetrical N-channel junction
FETs in a SOT23 envelope. Intended
for use in applications such as analog
switches, choppers and commutators
and in audio amplifiers.
1
Top view
d
s
2
MAM385
PINNING - SOT23
PIN
DESCRIPTION
1
drain
2
source
3
gate
Note
1. Drain and source are
interchangeable.
April 1995
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
±25
V
VGSO
gate-source voltage
−
−25
V
VGDO
drain-drain voltage
−
−25
V
IG
forward gate current
(DC)
50
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
150
°C
Tj
operating junction
temperature
−
150
°C
2
Tamb = 25°C;
note 1
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
from junction to ambient (note 1)
VALUE
500
UNIT
K/W
Notes
1. Mounted on an FR-4 printboard.
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−IGSS
reverse gate current
−VGS = 15 V
VDS = 0
−
3
nA
IDSX
drain-source cut-off current
VGS = −10 V
VDS = 5 V
−
3
nA
IDSS
drain current
VGS = 0
VDS = 15 V
80
−
mA
PMBFJ109
40
−
PMBFJ110
10
−
−
25
V
3
10
V
2
6
0.5
4
−
8
PMBFJ109
−
12
PMBFJ110
−
18
PMBFJ108
−V(BR)GSS
gate-source breakdown voltage
−IG = 1 µA
VDS = 0
−VGS(off)
gate-source cut-off voltage
ID = 1 µA
VDS = 5 V
PMBFJ108
PMBFJ109
PMBFJ110
RDS(on)
drain-source on-resistance
VGS = 0 V
VDS = 0.1 V
PMBFJ108
April 1995
3
Ω
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cis
input capacitance
VDS = 0
−VGS = 10 V
f = 1 MHz
15
30
pF
Cis
input capacitance
VDS = 0
−VGS = 0
f = 1 MHz
Tamb = 25 °C
50
85
pF
Crs
feedback capacitance
VDS = 0
−VGS = 10 V
f = 1 MHz
8
15
pF
Switching times (see Fig.2)
td
delay time
note 1
2
−
ns
ton
turn-on time
note 1
4
−
ns
ts
storage time
note 1
4
−
ns
toff
turn-off time
note 1
6
−
ns
Notes
1. Test conditions for switching times are as follows:
VDD = 1.5 V, VGS = 0 to −VGS(off) (all types);
−VGS(off) = 12 V, RL = 100 Ω (PMBFJ108);
−VGS(off) = 7 V, RL = 100 Ω (PMBFJ109);
−VGS(off) = 5 V, RL = 100 Ω (PMBFJ110).
50 Ω
k, halfpage
VDD
10 nF
VGS = 0 V
0.1 µF
10%
Vi
10 µF
RL
DUT
−VGS off
90%
toff
SAMPLING
SCOPE
50 Ω
ts
50 Ω
ton
tf
td
tr
90%
Vo
MBK295
10%
MBK294
Fig.2 Switching circuit.
April 1995
Fig.3 Input and output waveforms.
4
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
April 1995
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
6