Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat ts Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time VBE = 0 V PINNING - SOT429 PIN MAX. UNIT 6.0 1.7 1500 800 12 30 125 5.0 2.0 V V A A W V A µs Tmb ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A Icsat = 6.0 A; IB(end) = 0.55 A PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter tab TYP. collector c b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 800 12 30 8 12 200 7 125 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 1.0 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient CONDITIONS in free air 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 1 A; VCE = 5 V IC = 6 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 0.25 2.0 mA mA 7.5 800 13.5 - 0.25 - mA V V 5 10 7 5.0 1.3 9 V V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF Switching times (64 kHz line deflection circuit) ICM = 6.0 A; LC = 170 µH; Cfb = 5.4 nF; IB(end) = 0.55 A; LB = 0.6 µH; -VBB = 2 V; (-dIB/dt = 3.33 A/µs) 1.7 0.1 2.0 0.2 µs µs ts tf Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW ICsat + 50v 90 % 100-200R IC 10 % Horizontal tf Oscilloscope t ts IB IBend Vertical t 1R 100R 6V 30-60 Hz - IBM Fig.4. Switching times definitions. Fig.1. Test circuit for VCEOsust. IC / mA + 150 v nominal adjust for ICsat Lc 250 200 IBend 100 0 VCE / V LB T.U.T. Cfb -VBB min VCEOsust Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC Fig.5. Switching times test circuit. ICsat VCC DIODE t LC IB I B end t 5 us IBend 6.5 us 16 us -VBB VCL LB T.U.T. CFB VCE t Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V; LC = 100 - 200 µH; VCL ≤ 1500 V; LB = 3 µH; CFB = 1 - 2.2 nF; IB(end) = 1 - 2 A Fig.3. Switching times waveforms. September 1997 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor h FE 100 BU2527AW BU2527A 1.2 VBESAT / V Tj = 85 C Tj = 25 C Tj = 85 C Tj = 25 C 1.1 Tj = -40 C BU2527A 1 10 0.9 0.8 IC = 7A 6A 5A 0.7 1 0.01 0.6 0.1 1 IC / A 10 0 100 Fig.7. Typical DC current gain. hFE = f (IC) VCE = 5 V VBESAT / V 1.2 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2 Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC BU2527A BU2527AF Poff / W 100 Tj = 85 C Tj = 25 C 1.1 1 IC = 0.9 6A 10 0.8 0.7 IC/IB = 0.6 3 5 5A 0.5 0.4 0.1 1 IC / A 1 10 0 VCESAT / V 1 1.2 1.4 1.6 1.8 IB / A 2 Fig.11. Typical turn-off losses. Tj = 85˚C Poff = f (IB); parameter IC; f = 64 kHz Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB 10 0.2 0.4 0.6 0.8 BU2527A 4 Tj = 85 C BU2527AF ts, tf / us 3.5 Tj = 25 C 3 1 2.5 IC/IB = 5 2 3 IC = 1.5 0.1 6A 5A 1 0.5 0.01 0.1 1 10 0 100 0 IC / A 1 1.2 1.4 1.6 1.8 IB / A 2 Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB September 1997 0.2 0.4 0.6 0.8 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor Normalised Power Derating PD% 120 BU2527AW IC / A 110 BU2525A 100 100 90 tp = = 0.01 ICM 80 40 us 70 60 50 ICDC 40 10 30 20 10 100 us 0 0 20 40 60 80 100 Tmb / C 120 140 Ptot Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) 1 1 ms 10 Zth / (K/W) BU2525A 10 ms 0.1 1 0.5 0.2 0.1 0.05 0.1 DC 0.02 PD 0.01 tp D= tp T 0.01 D=0 0.001 1E-06 t T 1E-04 1E-02 t/s 1 10 1000 VCE / V 100 Fig.15. Forward bias safe operating area. Tmb = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. 1E+00 Fig.14. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T IC / A BU2527AF 30 20 10 0 0 500 1000 1500 VCE / V Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax September 1997 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.17. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100