DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP64-06 Silicon PIN diode Preliminary specification 1999 Dec 17 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-06 PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF attenuators and switches 1 anode • Low diode capacitance 2 cathode • Low diode forward resistance 3 common connection • Low series inductance • For applications up to 3 GHz. ook, 4 columns APPLICATIONS 2 1 • RF attenuators and switches. 2 1 DESCRIPTION 3 3 Two planar PIN diodes in common anode configuration in a SOT23 small plastic SMD package. MAM206 Top view Marking code: 6Kp Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode − 175 V − 100 mA − 250 mW storage temperature −65 +150 °C junction temperature −65 +150 °C VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg Tj 1999 Dec 17 Ts = 90 °C 2 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-06 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage IR reverse current Cd rD diode capacitance diode forward resistance τL charge carrier life time LS series inductance IF = 50 mA 0.95 1.1 V VR = 175 V − 10 µA VR = 20 V − 1 µA VR = 0; f = 1 MHz 0.52 − pF VR = 1 V; f = 1 MHz 0.37 − pF VR = 20 V; f = 1 MHz 0.23 0.35 pF IF = 0.5 mA; f = 100 MHz; note 1 20 40 Ω IF = 1 mA; f = 100 MHz; note 1 10 20 Ω IF = 10 mA; f = 100 MHz; note 1 2 3.8 Ω IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 Ω when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA 1.55 − µs 1.4 − nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 1999 Dec 17 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 220 K/W Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-06 GRAPHICAL DATA MCD777 102 handbook, halfpage MCD778 600 handbook, halfpage rD (Ω) Cd (fF) 10 400 1 200 10−1 10−1 10 1 IF (mA) 0 102 0 12 16 20 f = 1 MHz; T j = 25 °C. Forward resistance as a function of forward current; typical values. Fig.3 MCD779 0 handbook, halfpage S 2 8 VR (V) f = 100 MHz; T j = 25 °C. Fig.2 4 Diode capacitance as a function of reverse voltage; typical values. MCD780 0 handbook, halfpage (1) 21 (dB) −1 (2) S21 2 (dB) (3) −10 (4) −2 −3 −20 −4 −5 0.5 1 1.5 2 (1) I F = 100 mA. (3) I F = 1 mA. (2) I F = 10 mA. (4) I F = 0.5 mA. 2.5 f (GHz) −30 0.5 3 2 2.5 3 Diode zero biased and inserted in series with a 50 Ω stripline circuit. T amb = 25 °C. Tamb = 25 °C. Insertion loss (|S21|2) of the diode as a function of frequency; typical values. 1999 Dec 17 1.5 f (GHz) Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Fig.4 1 Fig.5 4 Isolation (|S21|2) of the diode as a function of frequency; typical values. Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-06 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 1999 Dec 17 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 5 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-06 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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