DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage −40 V ICM peak collector current −2 A RCEsat equivalent on-resistance <500 mΩ • Improved device reliability due to reduced heat generation • Enhanced performance over SOT23 1A standard packaged transistor. PARAMETER MAX. UNIT PINNING PIN APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION 1 base 2 emitter 3 collector 3 handbook, halfpage 3 DESCRIPTION PNP low VCEsat transistor in a SOT323 (SC-70) plastic package. 1 2 MARKING 1 TYPE NUMBER PBSS5140U MARKING CODE Top view MAM048 51t Fig.1 2001 Jul 20 2 2 Simplified outline (SOT323; SC-70) and symbol. Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −1 A ICM peak collector current − −2 A IBM peak base current − −1 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tamb ≤ 25 °C; note 2 − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; note 1 500 K/W in free air; note 2 357 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. 2001 Jul 20 3 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. VCB = −40 V; IC = 0 − − −100 nA VCB = −40 V; IC = 0; Tamb = 150 °C − − −50 µA VCE = −30 V; IB = 0 − − −100 nA nA ICEO collector-emitter cut-off current IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −5 V; IC = −1 mA 300 − − VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − VCE = −5 V; IC = −1 A 160 − − IC = −100 mA; IB = −1 mA − − −200 VCEsat saturation voltage UNIT mV IC = −500 mA; IB = −50 mA − − −250 mV IC = −1 A; IB = −100 mA − − −500 mV RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 300 <500 mΩ VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA − − −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 12 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2001 Jul 20 4 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U MLD543 1200 MLD544 −10 handbook, halfpage handbook, halfpage hFE VBE (V) (1) 800 −1 (1) (2) (2) 400 (3) (3) 0 −10−1 −1 −10 −102 −10−1 −10−1 −103 −104 IC (mA) −1 VCE = −5 V. (1) Tamb = 150 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD545 −103 handbook, halfpage −102 RCEsat (mV) (Ω) (1) −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD677 102 handbook, halfpage VCEsat −102 −10 10 (3) (1) (2) (2) −10 1 (3) −1 −1 −10 −102 −103 IC (mA) 10−1 −10−1 −104 −1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Jul 20 5 −10 −10−2 −10−3 −10−4 IC (mA) Equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U MLD678 300 handbook, halfpage fT (MHz) 200 100 0 −200 0 −400 −600 −800 −1000 IC (mA) VCE = −10 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Transition frequency as a function of collector current; typical values. 2001 Jul 20 6 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Jul 20 REFERENCES IEC JEDEC EIAJ SC-70 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Jul 20 8 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U NOTES 2001 Jul 20 9 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U NOTES 2001 Jul 20 10 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U NOTES 2001 Jul 20 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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