INTEGRATED CIRCUITS DATA SHEET TEA6200 Integrated AM upconversion receiver Product specification File under Integrated Circuits, IC01 August 1989 Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 GENERAL DESCRIPTION The TEA6200 is an integrated AM upconversion receiver circuit with an IF of 10.7 MHz. Because of the high dynamic range of the RF prestage there is no tuned prestage. The whole selectivity is provided by crystal filters. The circuit is intended for use in AM radios with synthesizer tuning. The TEA6200 can handle RF signals up to 2 V RMS. Features • No pre-tuned selection is required • No LW/MW switching • RF input is protected from static discharge from the aerial • Electronic standby switch • Voltage controlled oscillator for synthesizer tuning • IF output providing level information for search tuning. • No alignment required. QUICK REFERENCE DATA PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply voltage range VP 7.6 8.5 9.4 V Supply current range IP − 50 70 mA Vaf − 350 − mV AGC start Vrf 30 50 80 µV AGC range ∆Vrf − 95 − dB AF output voltage with: RF at 1 MHz and 10 mV fm at 400 Hz and 30% PACKAGE OUTLINE 20-lead dual in line; plastic (SOT146); SOT146-1; 1996 August 02. August 1989 2 Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 Fig.1 Block diagram. August 1989 3 Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 PINNING 1 SWD switching delay 2 MXI mixer input 3 MXO1 mixer output 1 4 MXO2 mixer output 2 5 VP supply voltage 6 LVO level output 7 AGC AGC time constant 8 Vref reference voltage 9 OSC oscillator 10 n.c. not internally connected* 11 IFO IF output 12 AFO AF output 13 DTI detector input 14 STB standby switch 15 IFI1 IF input 1 16 IFI2 IF input 2 17 GND ground 18 SPO switched prestage output 19 PRI prestage input 20 PRO prestage output Fig.2 Pinning diagram. * Pin 10 must be connected to pin 5, 8 or 17. August 1989 4 Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER SYMBOL MIN. MAX. UNIT Supply voltage VP − 12 V Supply current IP − 70 mA Total power dissipation Ptot − 850 mW Operating ambient temperature range Tamb −30 + 85 °C Storage temperature range Tstg −40 + 150 °C Electrostatic discharge voltage ±Ves − 10 kV THERMAL RESISTANCE From junction to ambient Rth j-a = 80 K/W Will tolerate discharge between −10 kV and +10 kV. Fig.3 Test circuit in accordance with IEC 315-1 clause 25. August 1989 5 Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 DC CHARACTERISTICS VP = 8.5 V; V14 = VP; Signal in OFF condition; all voltages referenced to ground unless otherwise specified. PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Mixer input VI − 4.0 − V Mixer output 1 VO − 8.5 − V Mixer output 2 VO − 8.5 − V Level output VO − 8.5 − V AGC voltage VAGC − 0.65 − V Reference voltage Vref − 4.0 − V Oscillator DC voltage VOSC − 4.0 − V Prestage input VI − 1.2 − V Prestage output VO − 3.2 − V CHARACTERISTICS VP = 8.5 V; Tamb = 25 °C; fRF = 1 MHz at 10 mV RMS; QOSC = 50; modulation = 400 Hz at 30%; insertion loss of filters: crystal filter = 1 dB; ceramic filter = 4 dB, all voltages referenced to ground unless otherwise specified. PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply Supply voltage range VP 7.6 8.5 9.4 V Supply current range IP − 50 70 mA Guaranteed operating voltage VP 7.0 − 10.0 V ON voltage V14 3.2 − VP V OFF voltage V14 0 − 1 V ON current |I14| − − 10 µA OFF current −I14 − − 0.5 mA IP − − 10 mA Vrf − 320 − mV Vrf 1.5 3.5 5.5 dB fosc 10.8 − 17.8 MHz Oscillator amplitude Vosc 200 420 − mV Tuned circuit selectivity QOSC 20 50 − − Input capacitance C2-8 − 5 10 pF Input impedance Z2-8 10 40 − kΩ Conversion transconductance I3-4/V2-8 − 3.8 − S Standby switch Supply current device OFF Prestage note 1 Switching threshold modulation = 80% Hysteresis Oscillator Frequency range Mixer August 1989 6 Philips Semiconductors Product specification Integrated AM upconversion receiver PARAMETER CONDITIONS TEA6200 SYMBOL MIN. TYP. MAX. UNIT IF amplifier Input impedance R16-15 10 − − kΩ Input capacitance C16-15 − − 5 pF Output impedance Z11 230 330 430 Ω Input impedance Z13 265 380 500 Ω Output impedance Z12 7 10 14 kΩ Output level Vaf 250 350 500 mV V8 3.8 4.0 4.2 V Z8 − 20 − Ω 40 − − dB Z6 − 1 − kΩ Detector note 2 Reference voltage Voltage VP = 8.5 V Output impedance Ripple rejection Level output pin 6 ∆V P ----------∆V 8 see Fig.5 Output impedance Output voltage Vrf = 70 µV V6 0.5 0.7 1.0 mV Output voltage Vrf = 2 mV V6 − 15 − mV (S + N)/N = 6 dB Vrf − 11 20 µV (S + N)/N = 26 dB Vrf − 110 150 µV (S + N)/N = 46 dB Vrf − 1100 2000 µV (S + N)/N = 26 dB Vrf − 200 − µV Vrf = 10 mV Vaf 250 350 500 mV Vrf = 20 µV Vaf − 100 − mV modulation = 80% dtot − 3 5 % RF = 10 mV to 1 V (S + N)/N 53 57 − dB ∆V P -----------∆V af 20 − − dB RF sensitivity RF input RF = 150 kHz Output signal AF output voltage Total distortion Signal plus noise-to-noise ratio Ripple rejection Vrf = 1 mV; VP = 8.5 V + Vr 20 Hz < fR < 20 kHz Vrms = 40 mV August 1989 7 Philips Semiconductors Product specification Integrated AM upconversion receiver PARAMETER CONDITIONS TEA6200 SYMBOL MIN. TYP. MAX. UNIT Large signal handling Aerial input voltage THD = 10%; modulation = 80% Vrf AGC range of preamplifier switch 2 3 − V − 12 − dB Switching threshold modulation = 80% Vrf − 320 − mV Hysteresis modulation = 80% Vrf 1.5 3.5 5.5 dB − 40 − dB − 95 − dB − 2 3 dB Vrf 30 50 80 µV I MFDR 2 72 82 − dB I MFDR 3 − 86 − dB I MFDR 2 74 84 − dB I MFDR 3 − 90 − dB Ripple rejection of preamplifier 20 Hz < fR < 1.5 MHz ∆V P ------------∆V 20 AGC AGC range Change of Vaf 100 µV < Vrf < 2 V AGC start Intermodulation free dynamic range Long wave second order 350/250 kHz input noise level = −99 dBm third order input noise level = −99 dBm Medium wave second order 650/1550 kHz input noise level = −104 dBm third order 1.25/1.4 MHz input noise level = −104 dBm Notes to the characteristics 1. The prestage is connected to the aerial by a 6 MHz low-pass filter that decouples unwanted aerial cable resonance frequencies. The large dynamic range of the prestage is achieved by use of a transimpedance amplifier with a feedback loop consisting of an equivalent aerial capacitance and a feedback capacitor. When large RF signals are received the feedback capacitance in the loop is increased and the gain subsequently reduced, (see Fig.4). C ae G V = V rf × --------Voltage gain for small signals C1 Voltage gain for large signals C ae G V = V rf × -------------------C1 + C2 2. To protect the demodulator and the AGC circuitry, against parasitic oscillation in the IF section, a ceramic filter is connected between the IF output and detector input. August 1989 8 Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 Fig.4 Prestage circuit. Fig.5 IF output level. August 1989 9 Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 Fig.6 Signal plus noise-to-noise ratio. Fig.7 Total harmonic distortion. APPLICATION INFORMATION Notes Fig. 8. COMPONENT CIRCUIT IDENTITY SUPPLIER REFERENCE (1) Crystal filters XTAL NDK 10T 7 BA (2) Ceramic filter SFE Murata E 10 7 S (3) Transformer T1 Toko 7PS-1078 JK (4) Variable capacitance diode. D1 BB609, BB809 or BBY40 (5) Oscillator coil L1 Toko 7PS-1077 X August 1989 10 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors Integrated AM upconversion receiver August 1989 APPLICATION INFORMATION 11 Product specification TEA6200 Fig.8 Application diagram. Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 PACKAGE OUTLINE DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 11 20 pin 1 index E 1 10 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c mm 4.2 0.51 3.2 1.73 1.30 0.53 0.38 0.36 0.23 26.92 26.54 inches 0.17 0.020 0.13 0.068 0.051 0.021 0.015 0.014 0.009 1.060 1.045 D e e1 L ME MH w Z (1) max. 6.40 6.22 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 2.0 0.25 0.24 0.10 0.30 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.078 (1) E (1) Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT146-1 August 1989 REFERENCES IEC JEDEC EIAJ SC603 12 EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-05-24 Philips Semiconductors Product specification Integrated AM upconversion receiver TEA6200 The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1989 13