PHILIPS SA2411DH

INTEGRATED CIRCUITS
SA2411
+20 dBm single chip linear amplifier for WLAN
Product data
Supersedes data of 2002 Jul 31
2003 Feb 07
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
1. DESCRIPTION
The SA2411 is a linear power amplifier designed for WLAN application in the 2.4 GHz band. Together with the SA2400A the chips form a
complete 802.11b transceiver. The SA2411 is a Si power amplifier with integrated matching and power level detector.
2. FEATURES
• 75 Ω + 25j Ω differential inputs, internally matched
• 50 Ω single-ended output, internally matched
• 15 dB gain block
• Power detector
• Bias adjust pin
• 18% efficiency at 3 V
• RF matching for SA2400A
3. APPLICATIONS
• IEEE 802.11 and 802.11b radios
• Supports DSSS and CCK modulation
• Supports data rates: 1, 2, 5.5, and 11 Mbps
• 2.45 GHz ISM band wireless communication devices
Table 1. Ordering information
PACKAGE
TYPE NUMBER
SA2411DH
NAME
DESCRIPTION
VERSION
TSSOP16
plastic thin shrink small outline package; 16 leads; body width 4.4 mm
SOT403-1
4. BLOCK DIAGRAM
VDD_DRIVER
VDD_BIAS
VDD_MAIN
IN+
INPUT
IN–
MATCH
OUTPUT
PA
ANT
MATCH
Power-up power mode
DETECTOR
SA2411
SR02383
Figure 1. Block diagram
2003 Feb 07
2
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
5. PINNING INFORMATION
1
16 VDD_BIAS
2
15 PWRUP
GND
3
14 GND
IN+
4
IN–
5
SA2411DH
VDD_MAIN
VDD_DRIVER
13 RF_GND
12 ANT
GND
6
DETECTOR
7
10 MODE
GND
8
9
11 GND
GND
SR02384
Figure 2. Pin configuration
Table 2. Pin description
PIN type is designated by A = Analog, D = Digital, I = Input, O = Output
SYMBOL
PIN
DESCRIPTION
TYPE
VDD_MAIN
1
Analog supply, VDD for power amplifier, 150 mA
A
VDD_DRIVER
2
Analog supply, VDD for biasing driver, 35 mA
A
GND
3
Grounding
A
IN+
4
Input pin, positive part of balanced signal
AI
IN–
5
Input pin, negative part of balanced signal
AI
GND
6
Grounding
A
DETECTOR
7
Power detector output
AO
GND
8
Grounding
A
GND
9
Grounding
A
MODE
10
Mode switch; floating = high gain, grounded = low gain
AI
GND
11
Grounding
A
ANT
12
Output pin, RF, to antenna
AO
RF_GND
13
RF ground must be connected
A
GND
14
Grounding
A
PWRUP
15
Power up pin. HIGH = amplifier is on. LOW = amplifier is off.
DI
VDD_BIAS
16
Analog supply, VDD for biasing the amplifier, 5 mA
A
All GND pins should be connected to ground to guarantee the best performance.
2003 Feb 07
3
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
6. FUNCTIONAL DESCRIPTION
The main building-blocks are:
• Fixed gain amplifier (PA)
• Output matching
• Input matching
• Power Detector
• Power Mode
Input
The device has differential inputs so a balun is needed in the case of single ended operation, input impedance is approximately 75 Ω + 25j Ω,
balanced. The inputs can be DC biased with the pin VDD_DRIVER. The input matching is optimized to interface with the SA2400A WLAN
transceiver chip.
Amplifier
The amplifier is a fixed gain, class AB amplifier. There is an additional pin, VDD_BIAS, to adjust the class A bias current. Reducing the class A
currents reduces the gain. This allows trade-offs to be made among gain, linearity and current.
Output matching
The output of the amplifier is matched, on chip, for a 50 Ω load. The matching includes the supply feed for the power amplifier. The pin
VDD_MAIN is the main supply for the amplifier. No additional filtering is needed to meet the 802.11b spec.
Power detector
The power detector detects the power level and transforms it into a low frequency current. The detector output must be loaded with a resistor to
ground for the highest accuracy. This resistor has an optimal value of 5.6 kΩ. Lower values can be used to comply with maximum input
sensitivity of ADCs, at the cost of dynamic range. The maximum voltage detected is 2.3 V.
Power mode
This pin selects the desired gain and linearity level (13 dB or 14.5 dB gain). The low gain is more applicable to high voltage applications from
3.3 V to 3.6 V. The high gain is more applicable to low voltage applications lower than 3.3 V.
NOTE:
In order to assure optimal thermal performance, it is recommended that all ground pins be connected, and that the number of vias to ground
under the chip be maximized. In addition, the use of solder mask under the chip (for scratch protection) is not recommended.
2003 Feb 07
4
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
7. CONNECTIVITY DIAGRAM
ANT
VDD
PWRUP
R1
MODE
DET
GND
GND
GND
ANT
GND
GND
VDD
C1
PwrUp
L1
SA2411
GND
IN–
IN+
GND
VDD
C2
VDD
L2
Idet.
R2
L3
C4
C3
Vdet
RFin
RFin
SR02385
C1, C2, C3
= 5.6 pF
C4
= 10 nF
R1
= optional connect to ground via 0 W resistor.
R2
= optional resistor to ground to convert current into voltage
L1, L2, L3
= Optional inductors
1 nH … 10 nH, or microstrip lines with length 1 … 10 mm.
No inductors and directly connecting all supplies to VDD might cause problems. The optimal values of the inductors
depends on the application board.
2003 Feb 07
5
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
8. OPERATION
The SA2411 linear amplifier is intended for operation in the 2.4 GHz band, specifically for IEEE 802.11 1 and 2 Mbits/s DSSS, and 5.5 and 11
Msymbols/s CCK standards. Throughout this document, the operating RF frequency refers to the ISM band between 2.4 and 2.5 GHz.
Amplifier Output Power
The SA2411 linear amplifier is designed to give at least 19 dBm output power for an 11 Msymbols/s CCK modulated input carrier. At 19 dBm
output power the ACPR specs are met. The fixed gain amplifier amplifies the input signal by 14.5 dB typically.
Power Mode
The biasing can be adjusted to change the gain and therefore the maximum linear output power. For high supply voltages (>3.2 V) the low-gain
mode is advised. For low supply voltages (<3.3 V) the high-gain mode is advised.
Power Mode
Pin 9 =
Typical output power
Typical small
signal Gain
Typical DC current
(no RF signal)
Typical Current
consumption
High
Floating
20.0 dBm
14.5 dB
35 mA
185 mA @ 20 dBm
Low
Grounded
20.0 dBm
13 dB
28 mA
185 mA @ 20 dBm
Power detector
The power detector current output is linear proportional with the RF output voltage. The RF output power is quadratic proportional to the RF
output voltage. Therefore, the detector is quadratic proportional to the output power. The following relation can be expressed:
P out + k
V ndetector
Pout is output power in mWatt, Vdetector is detector voltage in Volt, k = sensitivity in mWatt/V2, n = quadratic factor.
The quadratic factor is 1.5. The sensitivity is then 49 mWatt/V2.
Pout
Vdetector (5.6 kΩ load)
Idetector (5.6 kΩ in series)
20 dBm = 100 mW
1.7 V
300 uA
19 dBm = 79 mW
1.4 V
250 uA
17 dBm = 50 mW
1.0 V
175 uA
15 dBm = 32 mW
0.7 V
125 uA
9 dBm = 8 mW
0.3 V
50 uA
The loading of the detector can be different in the application. The highest accuracy is achieved with 5.6 kΩ. But other values can be used to
adapt to the maximum input sensitivity of other circuits. Other detector loading values result in other k-factors. The maximum detector voltage is
limited to about 2.4 V.
DC feed at input
There is a possibility to add a DC voltage at the input pins (pin 4 and pin 5) by feeding pin 2. This option should be used in case the SA2411 is
lined up with the SA2400A.
2003 Feb 07
6
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
9. OPERATING CONDITIONS
The SA2411 shall meet all of the operating conditions outlined in this section. Table 3 specifies the absolute maximum ratings for the device.
Table 4 gives the recommended operating conditions.
Table 3. Absolute maximum ratings
Symbol
Parameter
Min
Max
Unit
Tstg
Storage temperature
–55
+150
°C
VDDa
Supply voltage (analog)
–0.5
+3.85
V
–
Voltage applied to inputs
–0.5
VDD+0.5
V
–
Short circuit duration, to GND or VDD
–
1
sec
Table 4. Recommended operating conditions
Symbol
Parameter
Min
Nom
Max
Units
Tamb
Ambient operating temperature
–40
–
+85
°C
VDDa
Supply voltage (analog)
2.85
3.3
3.6
V
10. SA2411 TRANSMITTER REQUIREMENTS
Table 5. SA2411 transmitter specifications
Tamb = 25 °C; VCC = 3 V; frequency = 2.45 GHz, Rdetector = 5.6 kΩ, unless otherwise stated.
Specification
Condition, Remarks
Min
Nom
Max
Units
DC current
Standard mode (pin 10 is floating)
–
35
–
mA
DC current
Low output power mode (pin 10 is grounded)
–
28
–
mA
Leakage current
Vpwrup = 0 V. Vss = 3.0 V
–
–
10
µA
(relative to 1 dB compression of single carrier)
–
2
–
dB
2.4
2.45
2.5
GHz
DC
AC : 802.11b MODULATION
Output back off
RF frequency
Input impedance
Differential (75 Ω + 25j Ω)
–
100
–
Ω
Load impedance
Single ended
–
50
–
Ω
Power gain for small signal
Mode = High gain, Input level = –20 dBm
–
14.5
–
dB
Power gain for small signal
Mode = Low gain, Input level = –20 dBm
–
13
–
dB
Output power
Meeting the FCC specs of 30 dBc and 50 dBc, mode = high
–
+20.0
–
dBm
Current consumption
“
–
200
–
mA
Gain
“
–
12.5
–
dB
Output power
Meeting the FCC specs of 30 dBc and 50 dBc, mode = low
–
+20.0
–
dBm
Current consumption
“
–
200
–
mA
Gain
“
–
12.5
–
dB
Power ramping up time
10% to 90% ramp up
–
0.5
–
µs
Power ramping down (when
enabled)
a)
b)
–
0.5
0.5
–
µs
Error Vector Magnitude
11 Msymbols/s QPSK. Both RF outputs.
–
5
–
%
Isolation
Pin 15 (PWRUP) = 0 V
–
15
–
dB
Harmonic Suppression at 2 and 3
times fundamental frequency
fundamental frequency output power = +20 dBm
–
40
–
dBc
2003 Feb 07
90% to 10% ramp down
10% to carrier leakage level
7
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
Table 6. SA2411 Detector specification
Tamb = 25 °C, VCC = 3.0 V
Specification
Condition, Remarks
Min
Nom
Max
Units
Detector sensitivity
With 5 kΩ load resistor to ground
–
49
–
mW/V2
Detector accuracy per sample
At 16 dBm –40 °C to +80 °C; from 2.7 V to 3.6 V
–
0.3
–
dB
Absolute accuracy
From sample to sample
–
0.5
–
dB
GENERAL
Detector quadratic factor
–
1.5
–
–
Detector settling time
From 10% to 90% of final value
–
500
–
ns
Spread from sample to sample
20 dBm output power
–
1
–
dB
Absolute detector voltage
19 dBm output power
–
1.4
–
V
Absolute detector voltage error
From –30 °C to +80 °C;
from 2.7 V to 3.6 V at 19 dBm output power
–
0.15
–
V
+10
–
+21
dBm
Detector power range
11. GRAPHS
The following graphs are only for a typical sample measured on a SA2411 test board under nominal condition applying an 11Mb/s CCK 802.11b
modulation. Corrections for input, output and supply losses have been applied. The dotted lines represent the low gain mode. The solid
lines are for the high gain mode.
The first two graphs are small signal graphs. The gain and the DC currents are plotted versus supply voltage.
Gain versus Supply Voltage
18.0
40
16.0
Small signal gain[dB]]
small signal current[mA]]
DC current versus Supply Voltage
50
30
12.0
20
10.0
2.7
10
2.7
2.9
3.1
Supply Voltage[V]
3.3
3.5
2.9
3.1
Supply Voltage[V]
SR02464
Figure 3. DC current vs. supply voltage
2003 Feb 07
14.0
3.3
3.5
SR02465
Figure 4. Gain vs. supply voltage
8
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
The next eight graphs are presenting the power sweep for both gain modes at nominal conditions.
Output Power versus Input Power
Efficiency versus Output Power
22
25.0%
20.0%
Efficiency @ 2.7Volt
Pout[dBm]
20
18
16
14
15.0%
10.0%
5.0%
12
10
0.0%
–4
–2
0
2
4
6
Pin[dbm]
8
–2
2
6
10
14
18
22
Pout[dbm]
SR02466
SR02468
Figure 5. Output power vs. input power
Figure 7. Efficiency vs. output power
Gain versus Output Power
Current consumption vs Output Power
16
Current consumption [mA]
200
Gain[dB]
15
14
13
100
50
12
5
10
15
Pout[dbm]
0
–10
20
–6
–2
2
6
Pout[dbm]
SR02467
Figure 6. Gain vs. output power
2003 Feb 07
150
10
14
18
22
SR02469
Figure 8. Current consumption vs. output power
9
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
Detector Voltage versus Output Power
ACPR versus Output Power
2
–25
1.5
Detector[V]
ACPR[dBc]
–30
–35
0.5
–40
0
–45
8
7
12
17
12
14
16
18
20
SR02470
22
SR02472
Figure 11. Detector voltage vs. output power
Figure 9. ACPR vs. output power
Detector Error versus Output Power
ALT versus Output Power
1.0
–50
0.5
Detector error[dB]
–46
–54
0.0
–0.5
–58
–1.0
–62
7
12
17
7
22
12
17
22
Pout[dbm]
Pout[dbm]
SR02473
SR02471
Figure 12. Detector error vs. output power
Figure 10. ALT vs. output power
2003 Feb 07
10
22
Pout[dbm]
Pout[dbm]
ALT[dBc]
1
10
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
The next curves present the frequency dependency for an input power of +7 dBm:
Efficiency versus Frequency
Output Power versus Frequency
20.0%
15.0%
20
Eficiency[%]
Output Power[dBm]
21
19
10.0%
18
5.0%
17
2.40E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
0.0%
2.40E+00
Frequency[GHz]
Figure 13. Output power vs. frequency
2.50E+00
SR02476
ACPR versus frequency
Gain versus Frequency
–28
14
–30
ACPR[dBc]
Gain[dB]
2.48E+00
Figure 15. Efficiency vs. frequency
15
13
–32
–34
12
2.43E+00
2.45E+00
2.48E+00
Frequency[GHz]
–36
2.40E+00
2.50E+00
2.43E+00
2.45E+00
2.48E+00
2.50E+00
Frequency[GHz]
SR02475
SR02477
Figure 14. Gain vs. frequency
2003 Feb 07
2.45E+00
Frequency[GHz]
SR02474
11
2.40E+00
2.43E+00
Figure 16. ACPR vs. frequency
11
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
Detector Errror versus Frequency
1.0
–50
0.5
Detector Error[dB]
ALT[dBc]
ALT versus Frequency
–48
–52
–0.5
–54
–56
2.40E+00
2.43E+00
2.45E+00
2.48E+00
–1.0
2.40E+00
2.50E+00
SR02478
Detector Voltage versus Frequency
Detector voltage[V]
1.5
1
0.5
2.45E+00
2.48E+00
2.50E+00
Figure 19. Detector error vs. frequency
2
2.43E+00
2.45E+00
SR02480
Figure 17. ALT vs. frequency
0
2.40E+00
2.43E+00
Frequency[GHz]
Frequency[GHz]
2.48E+00
2.50E+00
Frequency[GHz]
SR02479
Figure 18. Detector voltage vs. frequency
2003 Feb 07
0.0
12
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
The last 5 curves are characterization data for supply voltage, temperature and power. The worst-case scenario is the combination of highest
temperature/lowest supply. The best-case scenario is the combination of lowest temperature and highest supply voltage. The data has been
taken using a non-modulated carrier at 2.5 GHz.
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–30
30.00
45.00
0
28.00
40.00
25
35.00
70
85
30.00
25.00
2.8
Efficiency [%]
DC current [mA]
50.00
26.00
24.00
22.00
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3.2
3.4
3.6
2.8
3.0
0.50
Detector Error [dB]
–30
0
16.00
Gain [dB]
85
3.2
3.4
3.6
Figure 23. Efficiency vs. supply voltage, mode = high
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17.00
25
15.00
70
85
14.00
0.25
0.00
–0.25
–0.50
3.0
3.2
3.4
SR02482
3.2
3.4
0
25
70
85
3.6
SR02485
Figure 24. Detector error vs. supply voltage, mode = high
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20.00
–30
0
19.00
25
70
18.00
85
17.00
3.2
3.4
Supply Voltage [V]
3.0
–30
Supply Voltage [V]
Figure 21. Gain vs. supply voltage, mode = high
3.0
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3.6
Supply Voltage [V]
Pout [dBm]
70
SR02484
Figure 20. DC current vs. supply voltage, mode = high
3.6
SR02483
Figure 22. Output power vs. supply voltage, mode = high
2003 Feb 07
25
Supply Voltage [V]
SR02481
2.8
0
20.00
3.0
Supply Voltage [V]
13.00
2.8
–30
13
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
12. APPLICATION WITH THE SA2400A
Next diagram is the application of the SA2400A with the SA2411.
The interface is simple. Two equal microstrip lines connect the SA2400A with the SA2411. The length of this connection should be kept to a
minimum.
The supply for the open collectors of the SA2400A is provided via pin 2 of the SA2411.
C2 is for supply voltage decoupling.
RF connection
VDD
PWRUP
16
15
14
13
12
GND
MODE
GND
ANT
RF_GND
GND
PWRUP
VDD_BIAS
Other connection
11
10
9
6
7
8
GND
GND
5
IN–
4
IN+
3
GND
VDD_MAIN
2
VDD_DRIVER
1
DETECTOR
SA2411
Idetector
48
AGCRESET
AGCSET
IDCOUT
A_GND
47
46
45
44
TX_OUT_HI_M
43
42
41
40
39
TX/RX
SCLK
SEN
SDATA
3-WIRE BUS
A_GND
TX_OUT_HI_P
A_GND
TX_OUT_LO
A_VDD
TX_HI
A_GND
C2
38
37
TX_IN_I_P/
TX_DATA_I
1
36
2
35
3
34
SA2400A
4
TX_IN_I_M/
TX_DATA_Q
TX_IN_Q_P
TX_IN_Q_M
33
SR02487
Figure 25.
NOTE:
A suggested starting point for designing the coupled microstrip lines:
Length = 1/18 λ. Width = 12 mils, Separation = 5 mils with the Dielectric constant = 4.6.
This should result in Zeven = 150 Ω, Zo = 75 Ω, and Zodd = 30 Ω.
There should be no ground plane under the microstrip lines.
2003 Feb 07
14
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm
2003 Feb 07
15
SA2411
SOT403-1
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
REVISION HISTORY
Rev
Date
Description
_3
20030207
Product data (9397 750 10825); ECN 853-2346 29486 of 07 February 2003;
supersedes Preliminary data SA2411 revision 2 of 31 July 2002 (9397 750 10166).
Modifications:
• Features (Section 2.)
– First bullet: from “75 Ω” to “75 Ω + 25j Ω ”
– delete bullet “1 dB attenuator”
• Block diagram: signal “Power mode” changed to “Power-up power mode”.
• Pin names modified.
• Functional description (Section 6.), Power mode: from “(14 dB or 14.5 dB gain)” to “(13 dB or 14.5 dB gain)”.
• Typical small signal Gain (HIGH) changed from 15 dB to 14.5 dB; (LOW) changed from 14 dB to 13 dB.
• Input impedance (nom) changed from 200 Ω to 100 Ω; Condition changed from “differential (100 + 100 Ω)” to
“differential (75 Ω + 25j Ω)”
• Gain (nom) changed from 13.0 dB to 12.5 dB.
• Output power (nom) changed from +20.5 to +20.0.
• Figures 20 through 24 modified.
• Note added below Figure 25.
_2
20020731
Preliminary data (9397 750 10166).
_1
20020723
Preliminary data (9397 750 10144).
2003 Feb 07
16
Philips Semiconductors
Product data
+20 dBm single chip linear amplifier for WLAN
SA2411
Data sheet status
Level
Data sheet status [1]
Product
status [2] [3]
Definitions
I
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent,
copyright, or mask work right infringement, unless otherwise specified.
 Koninklijke Philips Electronics N.V. 2003
All rights reserved. Printed in U.S.A.
Contact information
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 02-03
For sales offices addresses send e-mail to:
[email protected]
Document order number:
2003 Feb 07
17
9397 750 10825