Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time VBE = 0 V 5.0 1.85 300 1500 800 8 15 45 3.0 2.2 400 V V A A W V A V ns PINNING - SOT399 PIN PIN CONFIGURATION DESCRIPTION 1 base 2 collector 3 emitter Ths ≤ 25 ˚C IC = 5.0 A; IB = 1.25 A f = 16kHz IF = 5 A ICsat = 5A; f = 16kHz case isolated SYMBOL c case b Rbe e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 800 8 15 4 6 5 45 150 150 V V A A A A A W ˚C ˚C TYP. MAX. UNIT - 2.8 K/W 35 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. February 1999 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. UNIT - - 2500 V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 13.5 25 - - V Ω V 0.85 4.2 - 0.94 7 5.7 1.85 3.0 1.03 7.3 2.2 V V TYP. MAX. UNIT 2.75 3.75 µs 300 400 ns IF = 4 A; dIF/dt = 50 A/µs 19 - V VF = 5 V 500 - ns STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current CONDITIONS 2 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter-base breakdown voltage IB = 600 mA Base-emitter resistance VEB = 6 V Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A Base-emitter saturation voltage IC = 5.0 A; IB = 1.25 A DC current gain IC = 500 mA; VCE = 5 V IC = 5.0 A; VCE = 5 V Diode forward voltage IF = 5 A V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ICsat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A) ts Switching times (16 kHz line deflection circuit) Turn-off storage time tf Turn-off fall time Vfr Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time tfr 2 Measured with half sine-wave voltage (curve tracer). February 1999 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU4508DX + 150 v nominal adjust for ICsat DIODE t Lc IB1 IB t 20us 26us D.U.T. IB2 LB IBend Cfb 64us VCE -VBB Rbe t Fig.1. Switching times waveforms (16 kHz). Fig.4. Switching times test circuit. ICsat 100 90 % hFE BU4508DF/X/Z Ths = 25 C Ths = 85 C VCE = 1V IC 10 % tf 10 t ts IB IB1 t 1 0.01 - IB2 Fig.2. Switching times definitions. I I F 0.1 1 IC / A 10 Fig.5. High and low DC current gain. 100 F BU4508DF/X/Z hFE Ths = 25 C Ths = 85 C VCE = 5V 10% time t fr V 10 F V 5V V fr F 1 0.01 time Fig.3. Definition of anti-parallel diode Vfr and tfr. February 1999 0.1 1 IC / A 10 Fig.6. High and low DC current gain. 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF/X/Z VCESAT \ V 10 BU4508DX 120 Normalised Power Derating PD% with heatsink compound 110 Ths = 25 C Ths = 85 C 100 90 80 70 1 60 50 40 0.1 30 20 10 0 0.01 0.1 1 10 0 100 IC / A 40 60 80 Ths / C 100 120 140 Fig.10. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C Fig.7. Typical collector-emitter saturation voltage. Zth K/W BU4508DF/X/Z VBESAT / V 20 BU4508AF 10 1.2 Ths = 25 C Ths = 85 C 1.1 0.5 1 0.2 1 0.1 0.05 0.1 0.9 0.02 IC = 5 A 0.8 PD 0.01 tp D= tp T 0.7 0 0.6 0 1 2 3 IB / A 0.001 1.0E-07 4 ts/tf/ us 1.0E-03 1.0E-01 t 1.0E+01 t/s Fig.8. Typical base-emitter saturation voltage. 10 T 1.0E-05 Fig.11. Transient thermal impedance. BU4508D ts/tf ICsat = 5 A Ths = 85 C Freq = 16 kHz 8 6 4 2 0 0 0.5 1 1.5 2 2.5 IB / A 3 Fig.9. Typical collector storage and fall time. IC =5 A; Tj = 85˚C; f = 16kHz February 1999 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 3.0 0.7 4.5 3.3 10.0 27 max 25 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 5.45 0.9 max 5.45 3.3 Fig.12. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 6 Rev 1.000