PHILIPS BST84

DISCRETE SEMICONDUCTORS
DATA SHEET
BST84
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
DESCRIPTION
BST84
QUICK REFERENCE DATA
N-channel vertical D-MOS transistor
in SOT89 envelope and designed for
use as line current interrupter in
telephone sets and for application in
relay, high-speed and
line-transformer drivers.
Drain-source voltage
VDS
max.
200 V
Gate-source voltage (open drain)
±VGSO
max.
20 V
Drain current (DC)
ID
max.
250 mA
Total power dissipation up to Tamb = 25 °C
Ptot
max.
1 W
RDS(on)
typ.
max.
6 Ω
12 Ω
 Yfs
typ.
250 mS
Drain-source ON-resistance
ID = 250 mA; VGS = 10 V
FEATURES
• Direct interface to C-MOS, TTL,
etc.
Transfer admittance
ID = 250 mA; VDS = 15 V
• High-speed switching
• No second breakdown
PINNING - SOT89
1 = source
2 = gate
3 = drain
PIN CONFIGURATION
handbook, halfpage
handbook, 2 columns
d
g
MBB076 - 1
s
1
3
Bottom view
Marking: KN
Fig.1 Simplified outline and symbol.
April 1995
2
2
MSB013
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BST84
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
max.
200 V
Gate-source voltage (open drain)
±VGSO
max.
20 V
Drain current (DC)
ID
max.
250 mA
Drain current (peak)
IDM
max.
800 mA
Total power dissipation up to Tamb = 25 °C (note 1)
Ptot
max.
1 W
Storage temperature range
Tstg
Junction temperature
Tj
max.
150 °C
Rth j-a
=
125 K/W
−65 to + 150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
Note
1. Transistor mounted on a ceramic substrate with area of 2.5 cm2 and thickness of 0.7 mm.
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BST84
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
ID = 100 µA; VGS = 0
V(BR)DSS
min.
200 V
IDSS
max.
10 µA
IGSS
max.
100 nA
VGS(th)
min.
max.
0.8 V
2.8 V
RDS(on)
typ.
max.
6 Ω
12 Ω
 Yfs
typ.
250 mS
Ciss
typ.
max.
70 pF
90 pF
Coss
typ.
max.
20 pF
30 pF
Crss
typ.
max.
5 pF
10 pF
ton
typ.
max.
4 ns
10 ns
toff
typ.
max.
15 ns
25 ns
Drain-source leakage current
VDS = 160 V; VGS = 0
Gate-source leakage current
VGS = 20 V; VDS = 0
Gate threshold voltage
ID = 1 mA; VDS = VGS
Drain-source ON-resistance
ID = 250 mA; VGS = 10 V
Transfer admittance
ID = 250 mA; VDS = 15 V
Input capacitance at f = 1 MHz
VDS = 10 V; VGS = 0
Output capacitance at f = 1 MHz
VDS = 10 V; VGS = 0
Feedback capacitance at f = 1 MHz
VDS = 10 V; VGS = 0
Switching times (see Figs 2 and 3)
ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
handbook, halfpage
VDD = 50 V
handbook, halfpage
BST84
90 %
INPUT
10 %
90 %
10 V
OUTPUT
ID
0V
10 %
50 Ω
ton
MBB691
toff
MBB692
Fig.2 Switching times test circuit.
103
handbook, halfpage
Fig.3 Input and output waveforms.
MDA764
VGS = 10 V
5V
ID
(A)
0.8
4V
ID
MDA765
1
handbook, halfpage
(mA)
0.6
102
0.4
0.2
10
0
4
6
8
10
12
14
RDSon (Ω)
0
Fig.4 Tj = 25 °C; typical values.
April 1995
2
4
6
8
10
VGS (V)
Fig.5 Tj = 25 °C; VDS = 10 V; typical values.
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
MDA766
1
handbook, halfpage
MDA767
1.2
handbook, halfpage
VGS = 10 V
ID
(A)
0.8
BST84
Ptot
5V
(W)
0.8
0.6
4V
0.4
0.4
3V
0.2
0
0
2
0
4
6
8
0
10
VDS (V)
Fig.6 Tj = 25 °C; typical values.
MDA743
handbook, halfpage
k
k
2.5
1.1
2
1
1.5
0.9
1
0.8
0
50
100
Tj (°C)
0.7
−50
150
Fig.8
April 1995
150
200
Tamb (°C)
1.2
handbook, halfpage
0.5
−50
100
Fig.7 Power derating curve.
MDA742
3
50
0
50
100
Tj (°C)
150
Fig.9
R DS (on) at T j
k = ------------------------------------------- ;
R DS (on) at 25 °C
V GS ( th ) at T j
k = --------------------------------------------- ;
V GS ( th ) at 25 °C
at 400 mA/10 V; typical values.
VGS(th) at 1 mA; typical values.
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
MDA768
120
handbook, halfpage
C
(pF)
80
Ciss
40
Coss
Crss
0
0
10
20
VDS (V)
30
Fig.10 Tj = 25 °C; VGS = 0; f = 1 MHz; typical values.
April 1995
7
BST84
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BST84
PACKAGE OUTLINES
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT89
April 1995
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
8
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BST84
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
9
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
NOTES
April 1995
10
BST84
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
NOTES
April 1995
11
BST84
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© Philips Electronics N.V. 1997
SCA54
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137107/00/01/pp12
Date of release: April 1995
Document order number:
9397 750 02501