INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players TDA8808T TDA8808AT GENERAL DESCRIPTION The TDA8808 is a bipolar integrated circuit designed for use in compact disc players with a single spot read-out system. It amplifies the photo-diode signals and processes the error signals for the focus- and radial control network. Features • Data amplifier with equalizer and AGC • Offset-free pre-amplifier with AGC for the servo signals • Trackloss and drop-out detection • Start-up procedure for focus • Normalizing focus error output signal to minimize radial error interference • Laser supply amplifier and reference source • Both TDA8808T and TDA8808AT versions suitable for car, portable and home applications • Single and dual supply application • Focus in-lock signal; ready signal output (RD). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP Supply voltage range 4,5 5,0 5,5 V External voltage range Vext TDA8808T −5,5 −5,0 0 V Vext TDA8808AT VP 10 12 V Si/RD = 0 V 7,5 10 12,5 mA fHFin = 100 kHz 3 − 10 µA 0 − 6 µA −8 −4 −2 mA −30 − +85 °C IQ Quiescent supply current HF input current IHFin(p-p) (peak-to-peak value) LF input current ID ILO (for each diode input) Laser supply output current Si/R7D = HIGH Z Operating ambient Tamb temperature range PACKAGE OUTLINE 28-lead mini-pack; plastic (SO28; SOT136A); SOT136-1; 1996 August 13. November 1987 2 Philips Semiconductors Product specification Photo diode signal processor for compact disc players Fig.1 Block diagram. November 1987 3 TDA8808T TDA8808AT Philips Semiconductors Product specification Photo diode signal processor for compact disc players PINNING Fig.2 Pinning diagram. November 1987 4 TDA8808T TDA8808AT Philips Semiconductors Product specification Photo diode signal processor for compact disc players TDA8808T TDA8808AT Pin functions PIN MNEMONIC DESCRIPTION 1 GCHF Gain control input of HF amplifier. Current output from HF amplitude detector 2 VP Positive supply voltage 3 HFout HF amplifier and equalizer voltage output 4 DET HF detector voltage input 5 Sc Starting up capacitor input 6 Si/RD On/off control (start input); ready signal output (starting up procedure successful) 7 Beq Equalizer reference current input 8 Bgc DC and LF gain control reference current input 9 FOC START Focus normalizing circuit starting current 10 PLLH PLL on hold output 11 TL Track loss output 12 DODS Drop out detector suppression input 13 Vext TDA8808T Negative supply connection for FE and FElag output stage; also substrate connection TDA8808AT Positive supply connection for FE and FElag output stage 14 LPF Low pass filter for Iret, used in track loss (TL) detector and LF gain control 15 FE Current output of normalized, switched focus error signal 16 FElag Current output of switched focus error signal, intended for lag network. 17 LO Laser amplifier current output 18 LM Laser monitor diode input 19 GCLF Gain control input for AC and LF amplifiers. Current output from LF amplitude detector 20 Re2 Summation of amplified currents from D3 and D4 21 Re1 Summation of amplified currents from D1 and D2 23, 22 D1, D2 Current inputs to DC and LF photo diode amplifier 24, 25 D3, D4 Current inputs to DC and LF photo diode amplifier 26 HFin Current input to HF amplifier 27 GND Ground connection of device: also substrate connection for TDA8808AT 28 DEC Decoupling input (internal bypass) November 1987 5 Philips Semiconductors Product specification Photo diode signal processor for compact disc players TDA8808T TDA8808AT RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER MIN. MAX. UNIT Supply voltage ranges (see Fig.3) TDA8808T VP−V(ext) pin 2 to pin 13 −0,3 13 V VGND−V(ext) pin 27 to pin 13 −0,3 13 V TDA8808AT Vext−VGND pin 13 to 27 −0,3 13 V VP−VGND pin 2 to pin 27 −0,3 13 V Output voltage ranges VO except FE and FElag 0 VP V VO FE and FElag (TDA8808T) Vext VP V VO FE and FElag (TDA8808AT) VGND Vext V VO LM (open loop) VGND VP V Ptot Total power dissipation see Fig.4 Tstg Storage temperature range −55 + 150 °C Tamb Operating ambient temperature range −30 + 85 °C Tj Operating junction temperature − 150 °C THERMAL RESISTANCE From junction to ambient Fig.3 November 1987 Rth j-a = Supply voltages; (a) TDA8808T, (b) TDA8808AT. Fig.4 Power derating curve. 6 140 K/W Philips Semiconductors Product specification Photo diode signal processor for compact disc players TDA8808T TDA8808AT CHARACTERISTICS VP = + 5 V; VGND = 0 V; Vext = −5 V (TDA8808T); Vext = + 10 V (TDA8808AT); VRE1 = VRE2 = 3,5 V; VFE = VFElag = 0 V (TDA8808T); VFE = VFElag = 5 V (TDA8808AT); RFOC START = 3,3 kΩ; IBeq = IBgc = 50 µA (current sources); Tamb = 25 °C; all voltages measured with respect to VGND, unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP Supply voltage range 4,5 5,0 5,5 V External voltage range Vext TDA8808T −5,5 −5,0 0 V Vext TDA8808AT VP 10 12 V 7,5 10 12,5 mA IQ Quiescent supply current VSi/RD = 0 V Reference input (Beq) VBeq Input voltage level 500 560 620 mV IBeq Input current − −50 − µA Reference input (Bgc) VBgc Input voltage level 1,15 1,25 1,35 V IBgc Input current − −50 − µA Decoupling input (DEC) VDEC Input voltage level − VP−1,4 − V ZDEC Input impedance − 2 − kΩ − 1,4 − V HF input (HFin) VHFin Input voltage level HF input current IHFin(p-p) ZHFin (peak-to-peak value) fHFin = 100 kHz Input impedance 3 − 10 µA 0,5 1 2 kΩ HF part DC characteristics ∆V HFout Gain ( G1 ) = -------------------∆I HFin IHFin = ± 1 µA G1(max) Maximum gain VGCHF = 4 V 390 480 570 mV/µA G1(min) Minimum gain VGCHF = 1,5V −5 0 5 mV/µA AC characteristics G2 V O1 Gain ( G2 ) = 20 log ---------V O2 note 1 2 3,5 5 dB G3 V O1 Gain ( G3 ) = 20 log ---------V O2 note 2 4 5,5 7 dB note 3 − π/2 − rad. Phase of input/output signal φ at 1 MHz November 1987 7 Philips Semiconductors Product specification Photo diode signal processor for compact disc players SYMBOL PARAMETER TDA8808T TDA8808AT CONDITIONS MIN. TYP. MAX. UNIT Group delay τ300 at fHFin = 300 kHz + ∆f note 3 − 290 − ns note 3 * 9 * ns VGCHF = 4 V 1,5 2,4 3,3 V Flatness ∆τ between 0,1 and 1 MHz HF output (HFout) Output voltage VHFout at IHFin = 0 Output voltage (peak-to-peak value) VO1(p-p) at IHFin(p-p) = 7 µA note 4 1 1,20 − V VO(p-p) at IHFin(p-p) = 4 to 10 µA note 5 −20% M1 +20% V − 60 − Ω − 2,2 − V −10% 540 +10% mV ZHFout VDET0 Output impedance HF detector input (DET) see Fig.5 DC voltage level IDET = 0 Positive reference voltage Vrefp VDET to VDET0 Negative reference voltage Vrefn ZDET VDET to VDET0 Input impedance −5% −Vrefp +5% mV − 9 − kΩ Gain control (GCHF) Input voltage for: VGCHF minimum HF gain − 1,8 − V VGCHF maximum HF gain − 3,4 − V − 25 − MΩ Input impedance ZGCHF at VGCHF = 1,5 to 4 V Output current (see Fig.5) IGCHF ∆VDET < Vrefn or ∆VDET > Vrefp DODS = LOW 90 100 110 µA IGCHF ∆VDET < Vrefn or ∆VDET > Vrefp DODS = HIGH 86 96 106 µA DODS = LOW −0,65 −0,35 −0,2 µA DODS = HIGH −5,0 −4,4 −3,8 µA −0,65 −0,35 −0,2 µA 10 12,5 15 % Vrefn < ∆VDET < VDETn1 or IGCHF VDETp1 < ∆VDET < Vrefp IGCHF VDETp1 < ∆VDET < Vrefp IGCHF VDETn1 < ∆VDET < VDETp1 Vrefn < ∆VDET < VDETn1 or DODS = VDETp1/Vrefp; VDETn1/Vrefn November 1987 8 X** Philips Semiconductors Product specification Photo diode signal processor for compact disc players SYMBOL PARAMETER TDA8808T TDA8808AT CONDITIONS MIN. TYP. MAX. UNIT PLLH output (pin 10) Output voltage LOW VPLLHL IPLLH = 400 µA (sink current) − − 0,4 V Output voltage HIGH 2,4 − − V IPLLH Output sink current 0,5 1,5 − mA IPLLH Output source current − −100 −50 µA IDT1 Threshold total LF current VPLLHH IPLLH = −50 µA (source current) VGCLF = 3,5 V VDETp2/Vrefp; VDETn2/Vrefn − 2,0 − µA 57,5 62,5 67,5 % LF photo diode inputs (pins 22 to 25) (values given for each input) VD DC voltage level − 1,2 − V ID Input current range 0 − 6 µA ZD Input impedance at 1 MHz − 10 − kΩ ID = 1 µA LF gain Maximum DC gain I Re1 for: A1 = --------------------- ; I D1 + I D2 VGCLF = 3,5 V ID3 = ID4 = 0 A11 at lD1 = 0 µA; ID2 = 1 µA S1−10% S1 S1 A12 at lD1 = 1 µA; ID2 = 0 µA S1 or 55 S1 S1 I Re2 for: A2 = --------------------- ; I D3 + I D4 VGCLF = 3,5 V ID1 = ID2 = 0 A21 at lD3 = 0 µA; ID4 = 1 µA S1−10% S1 S1 A22 at lD3 = 1 µA; ID4 = 0 µA S1 or 55 S1 S1 55 64 84 S1 mean value of A11, A12, A21, A22 Minimum DC gain I Re1 for: A3 = --------------------- ; I D1 + I D2 VGCLF = 0,8 V ID3 = ID4 = 0 A31 at lD1 = 0 µA; ID2 = 1 µA S2-1 S2 S2+1 A32 at lD1 = 1 µA; ID2 = 0 µA S2-1 S2 S2+1 S2−1 S2 S2+1 I Re2 for: A4 = --------------------- ; I D3 + I D4 VGCLF = 0,8 V ID1 = ID2 = 0 A41 at lD3 = 0 µA; ID4 = 1 µA November 1987 9 Philips Semiconductors Product specification Photo diode signal processor for compact disc players SYMBOL A42 PARAMETER TDA8808T TDA8808AT CONDITIONS at lD3 = 1 µA; ID4 = 0 µA MIN. TYP. MAX. S2−1 S2 S2+1 −0,1 0,7 3 UNIT S2 mean value of A31, A32, A41, A42 AC gain for: G4 = 20 log P1; ID3 = ID4 = 0 G4 at ID1 = 0; ID2(p-p) = 1 µA + 2 µADC note 6 −4,5 −3 −1,5 dB G4 at ID1(p-p) = 1 µA + 2 µADC; ID2 = 0 note 6 −4,5 −3 −1,5 dB G5 = 20 log P2; ID1 = ID2 = 0 G5 at ID3 = 0; ID4(p-p) = 1 µA + 2 µADC note 7 −4,5 −3 −1,5 dB G5 at ID3(p-p) = 1 µA + 2 µADC; ID4 = 0 note 7 −4,5 −3 −1,5 dB Gain control (GCLF) Input voltage for: VGCLF minimum LF gain − 1 − V VGCLF maximum LF gain − 2,8 − V ZGCLF − 25 − MΩ IDT3 − 1,6 − mA IDT < IDT3 − −0,6 ± 10 µA Input impedance Threshold total LF current Output current (see Fig.7) IGCLF ∆VDET<VDETn2 or ∆VDET>VDETp2 IBgc IDT > IDT3; IGCLF S6−10 S6 S6+10 µA − −0,2 ±2 µA note 8 IGCLF VDETn2 < ∆VDET < VDETp2 IBgc Re1, Re2 outputs (pin 21, pin 20) Output current VGCLF = 3,5 V IRe1 at ID1 = ID2 = 1 µA; ID3 = ID4 = 0 110 128 168 mA IRe1 at ID1 = ID2 = ID3 = ID4 = 0 − 0 − mA IRe2 at lD1 = ID2 = 0; ID3 = ID4 = 1 µA 110 128 168 mA IRe2 at lD1 = ID2 = ID3 = ID4 = 0 − 0 − mA Output voltage VRe1 pin 21 1 − VP V VRe2 pin 20 1 − VP V Output impedance ZRe1 pin 21 − 1 − MΩ ZRe2 pin 20 − 1 − MΩ note 200 220 240 µA note 9 VP−2,1 VP−1,7 VP−1,4 V Reference current (Iret) Iret Iret = IRe1 = IRe2 LPF output (pin 14) VLPF DC voltage level November 1987 10 Philips Semiconductors Product specification Photo diode signal processor for compact disc players SYMBOL ZLPF PARAMETER TDA8808T TDA8808AT CONDITIONS MIN. TYP. MAX. UNIT − 3 − kΩ Si/RD = HIGH Z 75 150 500 µA Si/RD = LOW − 0 − µA Si/RD = HIGH Z 430 530 630 mV Si/RD = LOW −20 0 20 mV Vext+l,5 − VP−1,5 V Input impedance FOC START input (pin 9) Start current (ST) for FE IST (−IFOC START = IST) IST Start voltage (ST) for FE VST (VFOC START = VST) VST FElag output (pin 16) see Fig.8 Output voltage VFElag VFElag ZFElag TDA8808T +1,5 − Vext−1,5 V − 8 − MΩ VSc = VP −10 0 +10 µA VSc = VP −10% −2S1 +10% µA +10% µA TDA8808AT Output impedance Output current Si/RD = HIGH Z; VGCLF = 3,5 V IFElag=IO ID1 = ID2 = 1D3 = ID4 = 1 µA ID2 = ID3 = 1 µA; IFElag ID1 = ID4 = 2 µA +IO ID2 = ID3 = 2 µA; IFElag ID1 = ID4 = 1 µA VSc = VP −10% −2S1 +IO ID2 = ID3 = 2 µA; IFElag ID1 = ID4 = 1 µA VSc = 1,5 V −5 0 +5 µA VSc = 1,5 V −5 0 +5 µA ID2 = ID3 = 1 µA; IFElag ID1 = ID4 = 2 µA FE output (pin 15) see Fig.8 Output voltage VFE TDA8808T Vext+1,5 − VP−1,5 V VFE TDA8808AT +1,5 − Vext−1,5 V − 8 − MΩ VSc = 0 −10% −2S1−134−IST +10% µA VSc = 0 −10% −4S1−67−IST +10% µA VSc = 1,25 V −10% −2S1−134+IST +20% µA VSc = 1,25 V −10% −4S1−67+IST µA ZFE Output impedance Output current note 10 ID1 = ID4 = 2 µA; IFE ID2 = ID3 = 1 µA ID1 = ID4 = 1 µA; IFE ID2 = ID3 = 2 µA ID1 = ID4 = 2 µA; IFE ID2 = ID3 = 1 µA ID1 = ID4 = 1 µA; IFE ID2 = ID3 = 2 µA November 1987 11 +20% Philips Semiconductors Product specification Photo diode signal processor for compact disc players SYMBOL PARAMETER TDA8808T TDA8808AT CONDITIONS MIN. TYP. MAX. UNIT ID1 = ID4 = 2 µA; IFE ID2 = ID3 = 1 µA VSc = 1,75 V −20% −2S1+67+IST +10% µA VSc = 1,75 V −10% −4S1−67+IST +20% µA VSc = VP −20% 67 +20% µA VSc = VP −15% −S6 +15% µA VSc = VP −10 0 +10 µA VSc = VP −5 0 +5 µA ID1 = ID4 = 1 µA; IFE ID2 = ID3 = 2 µA ID1 = ID4 = 2 µA; IFE = S6 ID2 = ID3 = 1 µA ID1 = ID4 = 1 µA; IFE ID2 = ID3 = 2 µA ID1 = ID2 = IFE ID3 = ID4 = 1 µA ID1 = ID2 = IFE ID3 = ID4 = 0 DODS logic input (pin 12) Switching levels VDODS input voltage LOW − − +0,8 V VDODS input voltage HIGH +2 − − V −35 −25 −15 µA IDODS Input source current Starting input (Sc) see Fig.9 VSc Output voltage Si/RD = LOW − 0 − V VSc Output voltage S1/RD = HIGH Z − − VP−0,5 V − * − MΩ VSc = 1,5 V −1,2 −1 −0,8 µA Si/RD = LOW 0,5 1,2 2,0 mA − 0,15 0,4 V − − +0,8 V 2,4 2,8 − V −35 −25 −15 µA − 0,15 0,4 V 2,4 − − V ZSc Output impedance Output source current ISc ISc Output sink current Si/RD = HIGH Z; Si/RD logic input/output (pin 20) Voltage ‘forced LOW’ see Fig.9 ISi/RD = 400 µA; VSc = 2,5 V; VGCLF < 2,8 V VSi/RD Switching levels VSi/RD input voltage LOW VSi/RD input voltage HIGH Z ISi/RD Input source current LOW ISi/RD = −5 µA TL logic output (pin 11) see Fig.6 Output voltage level LOW ITL = 400 µA; (sink current) VTL Output voltage level HIGH VTL November 1987 ITL = −50 µA; (source current) 12 Philips Semiconductors Product specification Photo diode signal processor for compact disc players SYMBOL PARAMETER TDA8808T TDA8808AT CONDITIONS Threshold total LF current IDT2 Output voltage DODS = HIGH MIN. TYP. MAX. UNIT − 3,9 − µA (≥ 2,4 V) ∆VDET < VDETn2 or VTL ∆VDET > VDETp2 IDT don’t care 2,4 − − V VTL VDETn1 < ∆VDET < VDETp1 IDT don’t care 2,4 − − V IDT < IDT2 2,4 − − V IDT > IDT2 − 0,15 0,4 V VDETn2 < VDET < VDETn1 or VTL VDETp1 < ∆VDET < VDETp2 VDETn2 < VDET < VDETn1 or VTL VDETp1 < VDET < VDETp2 Output voltage DODS = LOW (≤ 0,8 V) ∆VDET < VDETn2 or VTL ∆VDET > VDETp2 IDT don’t care 2,4 − − V VTL VDETn2 < ∆VDET < VDETp2 IDT < IDT2 2,4 − − V VTL VDETn2 < ∆VDET < VDETp2 IDT > IDT2 − 0,15 0,4 V ITL Output sink current VTL = LOW 1 2,2 − mA ITL Output source current VTL = HIGH − −100 −50 µA τ1 Delay times (see Fig.10) 7 8,5 10 µs τ1−15% or 6,5 − τ1+ 5% or 10 µs τ3 7 8,5 10 µs τ4 τ3−10% or 7 − τ3+10% or 10 µs τ2 see Fig.6 LO output (pin 17) VLO Output voltage − − VP - 0,5 V ZLO Output impedance − 95 − kΩ ILO Output leakage current Si/RD = LOW −10 −0,1 0 µA ILO Maximum output current Si/RD = HIGH Z −8 −4 −2 mA closed loop 185 205 225 mV −2 − − µA Si/RD = HIGH Z − 0,5 − A/V Si/RD = LOW − 0 − A/V LM input (pin 18) VLM Input voltage ILM Input bias current Laser supply Transconductance GLDC For DC (note 11) GLDC November 1987 13 Philips Semiconductors Product specification Photo diode signal processor for compact disc players SYMBOL τLO PARAMETER CONDITIONS Value to be fixed. ** X = don’t care. MIN. − For AC (note 12) delay time * TDA8808T TDA8808AT TYP. * MAX. − Notes to the characteristics 1. Voltage output signal VO1 measured at fHFin = 700 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V. Voltage output signal VO2 measured at fHFin = 100 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V. 2. Voltage output signal VO1 measured at fHFin = 1 MHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V. Voltage output signal VO2 measured at fHFin = 100 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V. 3. Phase of input/output signal, group delay and flatness measured at IHFin(p-p) = 1 µA; VGCHF = 4 V. dφ Group delay τ = -------- ; ∆f ≈ 50 kHz. dw Flatness: ∆τ = τmax − τmin. 4. HF part output voltage for closed loop conditions; fHFin = 500 kHz. 5. HF part output voltage for closed loop conditions; fHFin = 0,1 to 1 MHz. M1 is the measured value of VO1. 6. I Re1 ( 1 ) I D1 ( 2 ) + I D2 ( 2 ) P 1 is the measured value of ------------------------------------------- ⋅ --------------------------------------------I D1 ( 1 ) + I D2 ( 1 ) I Re1 ( 2 ) Where: (1) are the current levels at fi = 25 kHz. (2) are the current levels at fi = 1 kHz. Measurement taken at VGCLF = 3,5 V. 7. I D3 ( 2 ) + I D4 ( 2 ) I Re2 ( 1 ) P 2 is the measured value of ------------------------------------------- ⋅ --------------------------------------------I D3 ( 1 ) + I D4 ( 1 ) I Re2 ( 2 ) Where: (1) are the current levels at fi = 25 kHz. (2) are the current levels at fi = 1 kHz. Measurement taken at VGCLF = 3,5 V. I DT 8. S6 is the measured value of S 1 ⋅ ------- – 1, 1 I Bgc 4 Measurement taken at VGCLF = 3,5 V. 9. LF part reference current Iret and low-pass filter output voltage for closed loop conditions. Measurement taken at IDT > IDT3; ∆VDET < VDETn2 or ∆VDET > VDETp2. V FOC START 10. FE output current measured at V GCLF = 3, 5 V and Si ⁄ RD = HIGH Z ; I ST = ------------------------------R FOC START 11. Laser supply transconductance for DC ∆I LO G LDC = -------------- ( 0 < – I LO < 2 mA ) ∆V LM November 1987 14 UNIT ns Philips Semiconductors Product specification Photo diode signal processor for compact disc players 12. Laser supply transconductance for AC 1 G LAC = G LO ⋅ ----------------------------1 + S ⋅ τLO Where: S is the laplace operator in the frequency domain. ------- DODS = HIGH DODS = LOW Fig.5 HF gain control current (IGCHF) as a function of input voltage ∆VDET. November 1987 15 TDA8808T TDA8808AT Philips Semiconductors Product specification Photo diode signal processor for compact disc players TDA8808T TDA8808AT (1) IDT > IDT1 - - - - - - - - IDT < IDT1 IDT = ID1 + ID2 + ID3 + ID4 (2) IDT > IDT2 - - - - - - - - IDT < IDT2 DODS = LOW IDT1 = 2,67 IBgc/S1 IDT2 = 5 IBgc/S1 S1 = average maximum LF gain (3) IDT > IDT2 - - - - - - - - IDT < IDT2 DODS = HIGH Fig.6 TL voltage as a function of input voltage ∆VDET. November 1987 16 Philips Semiconductors Product specification Photo diode signal processor for compact disc players - - - - - - - - IDT > IDT3 IDT < IDT3 IDT = ID1 + ID2 + ID3 + ID4 IDT3 = 2 IBgc/S1 S1 = average maximum LF gain Fig.7 LF gain control current (IGCLF) as a function of input voltage ∆VDET. November 1987 17 TDA8808T TDA8808AT Philips Semiconductors Product specification Photo diode signal processor for compact disc players −IFOC START 2 IBgc if IDT > IDT3 IDT × S1 if IDT < IDT3 ID1 + ID2 + ID3 + ID4 2 IBgc/S1 average maximum LF gain IST Icont Icont IDT IDT3 S1 = = = = = = (1 + 4)NN (2 + 3)NN = not normalized currents = (ID1 + ID4) S1 = not normalized currents = (ID2 + I D3) S1 ( 1 + 4) N I D1 I D4 = normalized currents = --------------------- + ---------------------- × I cont I D1 + I D2 I D3 + I D4 ( 2 + 3) N I D2 I D3 = normalized currents = --------------------- + ---------------------- × I cont I D1 + I D2 I D3 + I D4 Vj is the junction voltage (0,7 V typ.). Fig.8 FElag current output as a function of starting voltage input (VSc). November 1987 18 TDA8808T TDA8808AT Philips Semiconductors Product specification Photo diode signal processor for compact disc players RD: Si/RD forced LOW for ready signal VGCLF < 2,8 V -------- VGCLF > 3,5 V Vj is the junction voltage (0,7 V typ.) Fig.9 Si/RD signal as a function of VSc. Fig.10 Delay times between ∆VDET and VTL. November 1987 19 TDA8808T TDA8808AT Philips Semiconductors Product specification Photo diode signal processor for compact disc players TDA8808T TDA8808AT PACKAGE OUTLINE SO28: plastic small outline package; 28 leads; body width 7.5 mm SOT136-1 D E A X c y HE v M A Z 15 28 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 14 e bp 0 detail X w M 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 18.1 17.7 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.71 0.69 0.30 0.29 0.050 0.42 0.39 0.055 0.043 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT136-1 075E06 MS-013AE November 1987 EIAJ EUROPEAN PROJECTION ISSUE DATE 91-08-13 95-01-24 20 Philips Semiconductors Product specification Photo diode signal processor for compact disc players During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. November 1987 TDA8808T TDA8808AT 21 Philips Semiconductors Product specification Photo diode signal processor for compact disc players TDA8808T TDA8808AT DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1987 22