PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ■ ■ ■ ■ SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation. 1.3 Applications ■ Major application segments: ◆ Automotive 42 V power ◆ Telecom infrastructure ◆ Industrial. ■ Peripheral driver: ◆ Driver in low supply voltage applications (e.g. lamps and LEDs) ◆ Inductive load driver (e.g. relays, buzzers and motors). ■ DC-to-DC converter. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage - - 100 V IC collector current (DC) - - 1 A ICM peak collector current - - 3 A RCEsat equivalent on-resistance - - 200 mΩ PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Discrete pinning Pin Description 1, 2, 5, 6 collector 3 base 4 emitter Simplified outline 6 5 Symbol 1, 2, 5, 6 4 3 4 1 2 3 sym014 SOT363 3. Ordering information Table 3: Ordering information Type number PBSS8110Y Package Name Description Version - plastic surface mounted package; 6 leads SOT363 4. Marking Table 4: Marking Type number Marking code [1] PPBSS8110Y 81* [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 120 V VCEO collector-emitter voltage open base - 100 V VEBO emitter-base voltage open collector - 5 V ICM peak collector current Tj(max) - 3 A IC continuous collector current - 1 A IB continuous base current Ptot total power dissipation Tamb ≤ 25 °C 9397 750 12567 Product data sheet - 0.3 A [1] - 290 mW [2] - 480 mW [3] - 625 mW © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 2 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad. [3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting pad. 001aaa796 600 Ptot (mW) (1) 400 (2) 200 0 0 40 80 120 160 Tamb (°C) (1) 1 cm2 collector mounting pad. (2) Standard footprint. Fig 1. Power derating curves. 6. Thermal characteristics Table 6: Symbol Rth(j-a) Rth(j-s) Thermal characteristics Parameter Conditions thermal resistance from junction to ambient thermal resistance from junction to soldering point in free air Unit 431 K/W [2] 260 K/W [3] 200 K/W [1] 85 K/W [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad. [3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting pad. 9397 750 12567 Product data sheet in free air Typ [1] © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 3 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa798 103 (1) (2) (3) Zth (K/W) 102 (4) (5) (6) (7) 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 PCB; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig 2. Transient thermal impedance as a function of pulse time; typical values. 9397 750 12567 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 4 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa797 103 Zth (K/W) (1) 102 (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Mounted on FR4 PCB; mounting pad for collector = 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig 3. Transient thermal impedance as a function of pulse time; typical values. 7. Characteristics Table 7: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max ICBO collector-base cut-off current VCB = 80 V; IE = 0 A - - 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off current VCE = 80 V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 10 V; IC = 1 mA 150 - - VCE = 10 V; IC = 250 mA 150 - 500 VCE = 10 V; IC = 0.5 A [1] 100 - - VCE = 10 V; IC = 1 A [1] 80 - - 9397 750 12567 Product data sheet Unit © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 5 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 7: Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA - - 40 mV IC = 500 mA; IB = 50 mA - - 120 mV RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA VBEsat base-emitter saturation voltage VBEon IC = 1 A; IB = 100 mA - - 200 mV - 160 200 mΩ IC = 1 A; IB = 100 mA - - 1.05 V base-emitter turn-on voltage VCE = 10 V; IC = 1 A - - 0.9 V fT transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz - - 7.5 pF [1] [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 001aaa497 600 001aaa495 1000 VBE (mV) hFE (1) 800 (1) 400 (2) (2) 600 (3) 200 (3) 400 0 10−1 1 10 102 103 104 IC (mA) VCE = 10 V. 200 10−1 1 102 103 104 IC (mA) VCE = 10 V. (1) Tamb = 100 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 100 °C. Fig 4. DC current gain as a function of collector current; typical values. Fig 5. Base-emitter voltage as a function of collector current; typical values. 9397 750 12567 Product data sheet 10 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 6 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa504 103 001aaa505 103 VCEsat (mV) VCEsat (mV) 102 102 (1) (2) (3) 10 10−1 1 10 102 103 104 IC (mA) 10 10−1 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values. 001aaa506 104 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values. 001aaa498 1200 VBEsat (mV) VCEsat (mV) 1000 (1) 103 800 (2) (3) 600 102 400 10 10−1 1 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C. 200 10−1 1 10 102 103 104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 9. Base-emitter saturation voltage as a function of collector current; typical values. 9397 750 12567 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 7 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa499 1200 001aaa500 1000 VBEsat (mV) VBEsat (mV) 1000 800 800 600 600 400 10−1 1 102 10 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C. 001aaa496 2 10 102 103 104 IC (mA) Fig 11. Base-emitter saturation voltage as a function of collector current; typical values. 001aaa501 103 RCEsat (Ω) (1) (2) (3) (4) (5) 1.6 1 IC/IB = 50; Tamb = 25 °C. Fig 10. Base-emitter saturation voltage as a function of collector current; typical values. IC (A) 400 10−1 102 (6) 1.2 (7) (8) 10 (9) 0.8 (10) 1 0.4 0 0 1 2 3 4 5 10−1 10−1 (1) (2) (3) 1 VCE (V) Tamb = 25 °C. 10 102 103 104 IC (mA) IC/IB = 10. (1) IB = 35 mA. (1) Tamb = 100 °C. (2) IB = 31.5 mA. (2) Tamb = 25 °C. (3) IB = 28 mA. (3) Tamb = −55 °C. (4) IB = 24.5 mA. (5) IB = 21 mA. (6) IB = 17.5 mA. (7) IB = 14 mA. (8) IB = 10.5 mA. (9) IB = 7 mA. (10) IB = 3.5 mA. Fig 12. Collector current as a function of collector-emitter voltage; typical values. Fig 13. Equivalent on-resistance as a function of collector current; typical values. 9397 750 12567 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 8 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa502 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C. 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C. Fig 14. Equivalent on-resistance as a function of collector current; typical values. Fig 15. Equivalent on-resistance as a function of collector current; typical values. 9397 750 12567 Product data sheet 001aaa503 103 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 9 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig 16. Package outline. 9397 750 12567 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 10 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Revision history Table 8: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes PBSS8110Y_1 20040602 Product data - 9397 750 12567 - 9397 750 12567 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 11 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 12567 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 01 — 2 June 2004 12 of 13 PBSS8110Y Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 June 2004 Document order number: 9397 750 12567 Published in The Netherlands