PHILIPS PMEG3002AEB

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
PMEG3002AEB
Low VF MEGA Schottky barrier
diode
Product specification
2002 May 06
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
FEATURES
PMEG3002AEB
PINNING
• Forward current: 0.2 A
PIN
• Reverse voltage: 30 V
1
cathode
• Very low forward voltage
2
anode
DESCRIPTION
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• High efficiency DC/DC conversion
4 columns
• Voltage clamping
1
2
• Inverse-polarity protection
• Low voltage rectification
MGU328
• Low power consumption applications.
DESCRIPTION
Marking code: B1.
The marking bar indicates the cathode.
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small SMD plastic package.
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
−
300
mA
IFSM
non-repetitive peak forward current
tp = 8.3 ms half sinewave;
JEDEC method
−
1
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
Tamb
operating ambient temperature
−65
+125
°C
2002 May 06
2
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG3002AEB
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
VF
PARAMETER
continuous forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.2
IF = 0.1 mA
130
190
mV
IF = 1 mA
190
250
mV
IF = 10 mA
255
300
mV
IF = 100 mA
355
400
mV
IF = 200 mA
420
480
mV
IR
continuous reverse current
VR = 10 V; see Fig.3; note 1
2.5
10
µA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.4 20
25
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
note 1
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
2002 May 06
3
VALUE
UNIT
450
K/W
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG3002AEB
GRAPHICAL DATA
MHC187
104
handbook, halfpage
MHC188
104
handbook, halfpage
IF
(mA)
IR
(µA)
(1)
103
103
102
102
(2)
(1)
(2)
(3)
10
10
(3)
1
0
0.2
0.4
0.8
0.6
1
1
0
10
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MHC189
40
handbook, halfpage
Cd 35
(pF)
30
25
20
15
10
5
0
0
10
20
30
VR (V)
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2002 May 06
4
20
VR (V)
30
Reverse current as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG3002AEB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.7
0.5
0.35
0.25
0.2
0.1
1.3
1.1
0.9
0.7
1.7
1.5
0.15
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
2002 May 06
REFERENCES
IEC
JEDEC
EIAJ
SC-79
5
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG3002AEB
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 May 06
6
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG3002AEB
NOTES
2002 May 06
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2002
May 06
Document order number:
9397 750 09622