PHILIPS PXT3906

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXT3906
PNP switching transistor
Product specification
Supersedes data of 1997 May 05
1999 Apr 14
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
collector
3
base
• High-speed saturated switching applications.
handbook, halfpage
DESCRIPTION
2
PNP switching transistor in a SOT89 plastic package.
NPN complement: PXT3904.
3
1
MARKING
TYPE NUMBER
1
MARKING CODE
PXT3906
2
3
Bottom view
p2A
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
Ptot
total power dissipation
Tstg
−
−100
mA
−
1.2
W
storage temperature
−55
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−55
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 14
2
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to soldering point
VALUE
note 1
UNIT
104
K/W
24
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−
−50
nA
IEBO
emitter cut-off current
IC = 0; VEB = −6 V
−
−50
nA
hFE
DC current gain
VCE = −1 V; (see Fig.2)
VCEsat
VBEsat
collector-emitter saturation
voltage
base-emitter saturation voltage
Cc
collector capacitance
IC = −0.1 mA
60
−
IC = −1 mA
80
−
IC = −10 mA
100
300
IC = −50 mA
60
−
IC = −100 mA
30
−
IC = −10 mA; IB = −1 mA
−
−250
mV
IC = −50 mA; IB = −5 mA
−
−400
mV
IC = −10 mA; IB = −1 mA
−650
−850
mV
IC = −50 mA; IB = −5 mA
−
−950
mV
IE = ie = 0; VCB = −5 V; f = 1 MHz
−
4.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−
10
pF
fT
transition frequency
IC = −10 mA; VCE = −20 V; f = 100 MHz
250
−
MHz
F
noise figure
IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
−
4
dB
ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA −
65
ns
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
td
delay time
−
35
ns
tr
rise time
−
35
ns
toff
turn-off time
−
300
ns
ts
storage time
−
225
ns
tf
fall time
−
75
ns
1999 Apr 14
3
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
MGD835
160
handbook, full pagewidth
hFE
120
80
40
0
−10−2
−10−1
−1
−10
−102
VCE = −1 V.
Fig.2 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1999 Apr 14
4
oscilloscope
IC (mA)
−103
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT89
1999 Apr 14
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
5
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 14
6
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
NOTES
1999 Apr 14
7
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© Philips Electronics N.V. 1999
SCA63
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Date of release: 1999 Apr 14
Document order number:
9397 750 05627