DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 DESCRIPTION NPN transistors in a TO-202 plastic package. handbook, halfpage An A-version with e-b-c pinning instead of e-c-b is available on request. APPLICATIONS • For use in video output stages of black and white and colour television receivers. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to mounting base 3 base 1 2 3 MBH794 Fig.1 Simplified outline (TO-202) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BF857 − 160 V BF858 − 250 V − 300 V BF857 − 160 V BF858 − 250 V BF859 − 300 V − 300 mA W BF859 VCEO MIN. collector-emitter voltage ICM peak collector current open base Ptot total power dissipation Tmb ≤ 75 °C − 6 hFE DC current gain IC = 30 mA; VCE = 10 V 26 − Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz − 3 pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 100 MHz 90 − MHz 1996 Dec 09 2 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER CONDITIONS collector-base voltage MAX. UNIT open emitter BF857 − 160 V BF858 − 250 V − 300 V BF857 − 160 V BF858 − 250 V − 300 V − 5 V BF859 VCEO MIN. collector-emitter voltage open base BF859 VEBO emitter-base voltage open collector IC collector current (DC) − 100 mA ICM peak collector current − 300 mA IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − 2 W Tmb ≤ 75 °C − 6 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient 62.5 K/W Rth j-mb thermal resistance from junction to mounting base 12.5 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current ICBO collector cut-off current CONDITIONS UNIT − 0.1 µA − 0.1 µA − 0.1 µA nA IE = 0; VCB = 200 V BF858 collector cut-off current MAX. IE = 0; VCB = 100 V BF857 ICBO MIN. IE = 0; VCB = 250 V BF859 IEBO emitter cut-off current IC = 0; VEB = 5 V − 100 hFE DC current gain IC = 30 mA; VCE = 10 V 26 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 6 mA − 1 V Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz − 3 pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 100 MHz 90 − MHz 1996 Dec 09 3 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 PACKAGE OUTLINE 10.4 max handbook, full pagewidth 0.56 max 3.8 3.6 3.8 24.2 max 8.6 max 2.5 max (1) 2.4 max 12.2 min 1 2 3 0.8 (3x) 0.6 2.54 0.65 max 2.54 1.6 4.6 max 10 MGA322 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-202. 1996 Dec 09 4 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Dec 09 5 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 NOTES 1996 Dec 09 6 Philips Semiconductors Product specification NPN high-voltage transistors BF857; BF858; BF859 NOTES 1996 Dec 09 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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