BFG92A/X NPN 5 GHz wideband transistor Rev. 06 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X FEATURES DESCRIPTION • High power gain Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. • Low noise figure • Gold metallization ensures excellent reliability. handbook, 2 columns 4 PINNING APPLICATIONS PIN Wideband applications in the UHF and microwave range. 3 1 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MSB014 Marking code: %MW. Fig.1 SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage − − 20 V VCEO collector-emitter voltage − − 15 V IC collector current (DC) − − 25 mA Ptot total power dissipation Ts ≤ 60 °C − − 400 mW Cre feedback capacitance IC = ic = 0; VCB = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz − 16 − dB IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz − 11 − dB Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz − 2 − dB F noise figure Rev. 06 - 12 March 2008 2 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 25 mA Ptot total power dissipation Ts ≤ 60 °C; note 1 − 400 mW Tstg storage temperature range −65 150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point note 1 VALUE UNIT 290 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 10 V − − 50 hFE DC current gain IC = 15 mA; VCE = 10 V 65 90 135 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.6 − pF nA Ce emitter capacitance IC = ic = 0; VEB = 10 V; f = 1 MHz − 0.9 − pF Cre feedback capacitance IC = ic = 0; VCB = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz − 16 − dB IC = 15 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz − 11 − dB Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 1 GHz − 2 − dB Γs = Γopt; IC = 5 mA; VCE = 10 V; Tamb = 25 °C; f = 2 GHz − 3 − dB F noise figure Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) Rev. 06 - 12 March 2008 3 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X MBB963 - 1 800 MCD074 120 handbook, halfpage handbook, halfpage P tot (mW) h FE 600 80 400 40 200 0 0 0 50 100 150 200 0 10 20 Ts ( o C) I C (mA) 30 VCE = 10 V. Fig.3 DC current gain as a function of collector current; typical values. Fig.2 Power derating curve. MBB275 MCD075 handbook,0.6 halfpage 6 handbook, halfpage fT (GHz) C re (pF) 0.4 4 0.2 2 0 0 0 6 12 18 0 24 10 VCB (V) I C (mA) 30 VCE = 10 V; Tamb = 25 °C; f = 500 MHz. IC = ic = 0; f = 1 MHz. Fig.4 20 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Rev. 06 - 12 March 2008 Transition frequency as a function of collector current; typical values. 4 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X MCD077 30 MCD078 30 handbook, halfpage handbook, halfpage MSG gain gain (dB) (dB) MSG G UM 20 20 G UM 10 10 0 0 5 10 0 20 25 I C (mA) 15 0 5 VCE = 10 V; f = 500 MHz. VCE = 10 V; f = 1 GHz. Fig.6 Fig.7 Gain as a function of collector current; typical values. MCD079 50 10 25 20 I C (mA) 15 Gain as a function of collector current; typical values. MCD080 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 G UM 40 G UM MSG 30 30 MSG 20 20 G max G max 10 10 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 VCE = 10 V; IC = 5 mA. VCE = 10 V; IC = 15 mA. Fig.8 Fig.9 Gain as a function of frequency; typical values. Rev. 06 - 12 March 2008 2 10 3 f (MHz) 10 4 Gain as a function of frequency; typical values. 5 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X MCD081 4 MCD082 4 handbook, halfpage handbook, halfpage f = 2 GHz F (dB) I C = 15 mA F (dB) 3 10 mA 3 5 mA 1 GHz 500 MHz 2 2 1 1 0 1 10 I C (mA) 0 10 2 10 2 10 3 f (MHz) 10 4 VCE = 10 V. VCE = 10 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. stability circle 1 handbook, full pagewidth 0.5 un re sta gio bl n e 2 0.2 5 OPT 10 * + j F min = 1.6 dB 0 –j MSG 23.9 dB 0.2 0.5 1 2 5 ∞ 10 10 2 dB 5 0.2 3 dB 4 dB 2 0.5 Zo = 50 Ω. Maximum stable gain = 23.9 dB. 1 MCD083 Fig.12 Common emitter noise figure circles; typical values. Rev. 06 - 12 March 2008 6 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 1 handbook, full pagewidth 0.5 2 unsta ble re gion stability circle 0.2 5 OPT 10 * +j F min = 2.1 dB 0 MSG 0.2 19.9 dB –j 1 0.5 2 5 ∞ 10 10 2.5 dB 3 dB 0.2 5 4 dB 2 0.5 1 MCD084 Zo = 50 Ω. Maximum stable gain = 19.9 dB. Fig.13 Common emitter noise figure circles; typical values. 1 handbook, full pagewidth 0.5 2 5 dB 4 dB 0.2 5 3.5 dB OPT 10 * +j F min = 3 dB 0 0.2 Gmax –j 0.5 1 2 5 ∞ 10 10 * 12.5 dB 0.2 12 dB 5 10 dB 2 0.5 1 MCD085 Zo = 50 Ω. Fig.14 Common emitter noise figure circles; typical values. Rev. 06 - 12 March 2008 7 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 + j 0.2 0 0.5 1 2 5 10 ∞ 40 MHz –j 10 5 0.2 2 0.5 1 MCD086 VCE = 10 V; IC = 15 mA. Fig.15 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 45 o 135 o 180 o 40 MHz 50 40 30 20 10 _ 45 o _ 135 o VCE = 10 V; IC = 15 mA. 0o 3 GHz _ 90 o MCD072 Fig.16 Common emitter forward transmission coefficient (S21); typical values. Rev. 06 - 12 March 2008 8 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X 90 o handbook, full pagewidth 45 o 135 o 3 GHz 40 MHz 180 o 0.04 0.08 0.12 0.16 0.20 0o _ 45 o _ 135 o _ 90 o VCE = 10 V; IC = 15 mA. MCD071 Fig.17 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 –j 10 ∞ 40 MHz 0.2 10 5 3 GHz 2 0.5 1 MCD073 VCE = 10 V; IC = 15 mA. Fig.18 Common emitter output reflection coefficient (S22); typical values. Rev. 06 - 12 March 2008 9 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor SPICE parameters for BFR90A/X die SEQUENCE No. PARAMETER BFG92A/X SEQUENCE No. VALUE UNIT PARAMETER 36 (note 1) VJS VALUE UNIT 750.0 mV 1 IS 411.8 aA 37 (note 1) MJS 0.000 − 2 BF 102.6 − 38 FC 850.0 m 3 NF 997.2 m Note 4 VAF 62.67 V 5 IKF 3.200 A 1. These parameters have not been extracted, the default values are shown. 6 ISE 4.010 fA 7 NE 1.577 − 8 BR 18.10 − 9 NR 996.2 m 10 VAR 3.369 V 11 IKR 1.281 A 12 ISC 279.9 aA 13 NC 1.075 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 1.164 Ω 18 RC 2.320 Ω 19 (note 1) XTB 0.000 − 20 (note 1) EG 1.110 eV 21 (note 1) XTI 3.000 − 22 CJE 890.5 fF 23 VJE 600.0 mV 24 MJE 258.5 m 25 TF 15.49 ps 26 XTF 39.14 − 27 VTF 2.152 V 28 ITF 213.7 mA Cbe 84 fF 29 PTF 0.000 deg Ccb 17 fF 30 CJC 546.5 fF Cce 191 fF 31 VJC 380.8 mV L1 0.12 nH 32 MJC 202.9 m L2 0.21 nH 33 XCJC 150.0 m L3 0.06 nH 34 TR 5.618 ns LB 0.95 nH 35 (note 1) CJS 0.000 F LE 0.40 nH C cb handbook, halfpage L1 LB B L2 B' C' C E' C be Cce LE MBC964 L3 E QLB = 50; QLE = 50. QLB,E (f) = QLB,E √ (f/fc). fc = scaling frequency = 100 MHz. Fig.19 Package equivalent circuit SOT143B. List of components (see Fig.19) DESIGNATION Rev. 06 - 12 March 2008 VALUE UNIT 10 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG92A/X PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT143B Rev. 06 - 12 March 2008 11 of 13 BFG92A/X NXP Semiconductors NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Rev. 06 - 12 March 2008 12 of 13 BFG92A/X NXP Semiconductors NPN 5 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFG92AX_N_6 20080312 Product data sheet - BFG92AX_N_5 • Modifications: Characteristics Table; DC current gain value changed BFG92AX_N_5 20071126 Product data sheet - BFG92AX_4 BFG92AX_4 (9397 750 04344) 19980923 Product specification - BFG92SERIES_3 BFG92SERIES_3 19950912 Product specification - BFG92SERIES_2 BFG92SERIES_2 19921101 Product specification - BFG92_SERIES_1 BFG92_SERIES_1 - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 March 2008 Document identifier: BFG92AX_N_6