DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Aug 5 2004 Oct 25 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X QUICK REFERENCE DATA FEATURES • High hFE and low VCEsat at high current operation SYMBOL • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS PARAMETER MAX. UNIT VCEO collector-emitter voltage 80 V IC collector current (DC) 4 A ICM peak collector current 10 A RCEsat equivalent on-resistance 54 mΩ • Medium power peripheral drivers; e.g. fan, motor • Strobe flash units for DSC and mobile phones PINNING • Inverter applications; e.g. TFT displays • Power switch for LAN and ADSL systems PIN DESCRIPTION • Medium power DC-to-DC conversion 1 emitter • Battery chargers. 2 collector 3 base DESCRIPTION NPN low VCEsat transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5480X. 2 MARKING 3 MARKING CODE(1) TYPE NUMBER PBSS4480X 1 *1Y sym042 3 Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 2 1 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4480X 2004 Oct 25 − DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 80 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) note 4 − 4 A ICRM repetitive peak collector current tp ≤ 10 ms; δ ≤ 0.1 − 6 A ICM peak collector current t = 1 ms or limited by Tj(max) − 10 A IB base current (DC) − 1 A IBM peak base current t ≤ 300 µs − 2 A Ptot total power dissipation Tamb ≤ 25 °C notes 1 and 2 − 2.5 W note 2 − 550 mW note 3 − 1 W note 4 − 1.4 W note 5 − 1.6 W Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Oct 25 3 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor 001aaa229 1600 Ptot (mW) PBSS4480X (1) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4; standard footprint. Fig.2 Power derating curves. 2004 Oct 25 4 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE UNIT 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W thermal resistance from junction in free air to ambient notes 1 and 2 Rth(j-s) thermal resistance from junction to soldering point Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 006aaa232 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 10−1 10−5 (10) 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Oct 25 5 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa234 103 Zth (K/W) 102 (1) (2) (3) (4) 10 (5) (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Oct 25 6 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 80 V; IE = 0 A − − 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C − − 50 µA VCE = 80 V; VBE = 0 V − − 100 nA ICES collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 2 V; IC = 0.5 A 250 400 − − VCE = 2 V; IC = 1 A; note 1 250 400 − − VCE = 2 V; IC = 2 A; note 1 175 270 − − VCE = 2 V; IC = 4 A; note 1 80 140 − − VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA − 25 40 mV IC = 1 A; IB = 50 mA − 55 80 mV IC = 2 A; IB = 40 mA − 110 160 mV IC = 4 A; IB = 200 mA; note 1 − 170 230 mV IC = 5 A; IB = 500 mA; note 1 − 200 270 mV RCEsat equivalent on-resistance IC = 5 A; IB = 500 mA; note 1 − 40 54 mΩ VBEsat base-emitter saturation voltage IC = 0.5 A; IB = 50 mA − 0.78 0.85 V IC = 1 A; IB = 50 mA − 0.79 0.9 V IC = 1 A; IB = 100 mA; note 1 − 0.82 0.95 V IC = 4 A; IB = 400 mA; note 1 − 0.95 1.05 V VBEon base-emitter turn-on voltage IC = 2 A; VCE = 2 V − 0.78 0.85 V fT transition frequency IC = 100 mA; VCE = 10 V; f = 100 MHz 120 150 − MHz Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz − 35 50 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Oct 25 7 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 001aaa734 1000 hFE 001aab057 1.2 (1) VBE (V) 800 (2) 0.8 (1) 600 (2) 400 (3) (3) 0.4 200 0 10−1 1 10 102 0 10-1 103 104 IC (mA) 10 102 103 104 IC (mA) VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 1 DC current gain as a function of collector current; typical values. Fig.7 001aaa737 103 Base-emitter voltage as a function of collector current; typical values. 001aaab059 1 VCEsat (mV) VCEsat (V) 102 10-1 (1) (2) (3) (1) (2) 10-2 10 (3) 1 10−1 1 10 102 10-3 10-1 103 104 IC (mA) 1 (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Oct 25 8 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 001aaa736 1.2 001aaa738 103 RCEsat (Ω) VBEsat (V) 102 (1) 0.8 10 (2) (3) 1 0.4 10−1 (1) (2) (3) 0 10−1 1 102 10 10−2 10−1 103 104 IC (mA) 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. (1) Tamb = 100 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Equivalent on-resistance as a function of collector current; typical values. (2) Tamb = 25 °C. (3) Tamb = −55 °C. 001aaa733 10 (4) (3) (2) IC (A) 8 VBEon (V) (5) (6) 0.8 (7) 6 001aab321 1.2 (1) (8) (9) 4 (10) 0.4 2 0 0 0.4 0.8 1.2 1.6 0 10−1 2 VCE (V) (1) IB = 190 mA. (5) IB = 114 mA. (9) IB = 38 mA. (2) IB = 171 mA. (3) IB = 152 mA. (6) IB = 95 mA. (7) IB = 76 mA. (10) IB = 19 mA. (4) IB = 133 mA. (8) IB = 57 mA. 10 102 103 104 IC (mA) Tamb = 25 °C. Fig.12 Collector current as a function of collector-emitter voltage; typical values. 2004 Oct 25 1 Fig.13 Base-emitter turn-on voltage as a function of collector current; typical values. 9 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X Reference mounting conditions 32 mm 32 mm handbook, halfpage 10 mm 40 mm 2.5 mm 1 mm 40 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm 001aaa234 MLE322 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Oct 25 10 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Oct 25 REFERENCES IEC JEDEC JEITA TO-243 SC-62 11 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Oct 25 12 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp13 Date of release: 2004 Oct 25 Document order number: 9397 750 13924