PHILIPS PBSS4480X

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D109
PBSS4480X
80 V, 4 A
NPN low VCEsat (BISS) transistor
Product specification
Supersedes data of 2004 Aug 5
2004 Oct 25
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
QUICK REFERENCE DATA
FEATURES
• High hFE and low VCEsat at high current operation
SYMBOL
• High collector current capability: IC maximum 4 A
• High efficiency leading to less heat generation.
APPLICATIONS
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage 80
V
IC
collector current (DC)
4
A
ICM
peak collector current
10
A
RCEsat
equivalent
on-resistance
54
mΩ
• Medium power peripheral drivers; e.g. fan, motor
• Strobe flash units for DSC and mobile phones
PINNING
• Inverter applications; e.g. TFT displays
• Power switch for LAN and ADSL systems
PIN
DESCRIPTION
• Medium power DC-to-DC conversion
1
emitter
• Battery chargers.
2
collector
3
base
DESCRIPTION
NPN low VCEsat transistor in a SOT89 (SC-62) plastic
package.
PNP complement: PBSS5480X.
2
MARKING
3
MARKING CODE(1)
TYPE NUMBER
PBSS4480X
1
*1Y
sym042
3
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
2
1
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS4480X
2004 Oct 25
−
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
VERSION
SOT89
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
80
V
VCEO
collector-emitter voltage
open base
−
80
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
note 4
−
4
A
ICRM
repetitive peak collector current
tp ≤ 10 ms; δ ≤ 0.1
−
6
A
ICM
peak collector current
t = 1 ms or limited by Tj(max) −
10
A
IB
base current (DC)
−
1
A
IBM
peak base current
t ≤ 300 µs
−
2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
notes 1 and 2
−
2.5
W
note 2
−
550
mW
note 3
−
1
W
note 4
−
1.4
W
note 5
−
1.6
W
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Oct 25
3
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
001aaa229
1600
Ptot
(mW)
PBSS4480X
(1)
1200
(2)
800
(3)
400
0
−50
0
50
100
150
200
Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4; standard footprint.
Fig.2 Power derating curves.
2004 Oct 25
4
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
50
K/W
note 2
225
K/W
note 3
125
K/W
note 4
90
K/W
note 5
80
K/W
16
K/W
thermal resistance from junction in free air
to ambient
notes 1 and 2
Rth(j-s)
thermal resistance from junction
to soldering point
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
006aaa232
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
1
10−1
10−5
(10)
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Oct 25
5
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
006aaa233
103
Zth
(K/W)
(1)
102
(2)
(3)
(5)
(4)
(6)
10
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa234
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
10
(5)
(6)
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Oct 25
6
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 80 V; IE = 0 A
−
−
100
nA
VCB = 80 V; IE = 0 A;
Tj = 150 °C
−
−
50
µA
VCE = 80 V; VBE = 0 V
−
−
100
nA
ICES
collector-emitter cut-off current
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0 A
−
−
100
nA
hFE
DC current gain
VCE = 2 V; IC = 0.5 A
250
400
−
−
VCE = 2 V; IC = 1 A; note 1 250
400
−
−
VCE = 2 V; IC = 2 A; note 1 175
270
−
−
VCE = 2 V; IC = 4 A; note 1 80
140
−
−
VCEsat
collector-emitter saturation
voltage
IC = 0.5 A; IB = 50 mA
−
25
40
mV
IC = 1 A; IB = 50 mA
−
55
80
mV
IC = 2 A; IB = 40 mA
−
110
160
mV
IC = 4 A; IB = 200 mA;
note 1
−
170
230
mV
IC = 5 A; IB = 500 mA;
note 1
−
200
270
mV
RCEsat
equivalent on-resistance
IC = 5 A; IB = 500 mA;
note 1
−
40
54
mΩ
VBEsat
base-emitter saturation voltage
IC = 0.5 A; IB = 50 mA
−
0.78
0.85
V
IC = 1 A; IB = 50 mA
−
0.79
0.9
V
IC = 1 A; IB = 100 mA;
note 1
−
0.82
0.95
V
IC = 4 A; IB = 400 mA;
note 1
−
0.95
1.05
V
VBEon
base-emitter turn-on voltage
IC = 2 A; VCE = 2 V
−
0.78
0.85
V
fT
transition frequency
IC = 100 mA; VCE = 10 V;
f = 100 MHz
120
150
−
MHz
Cc
collector capacitance
IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
−
35
50
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Oct 25
7
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
001aaa734
1000
hFE
001aab057
1.2
(1)
VBE
(V)
800
(2)
0.8
(1)
600
(2)
400
(3)
(3)
0.4
200
0
10−1
1
10
102
0
10-1
103
104
IC (mA)
10
102
103
104
IC (mA)
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
VCE = 2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
1
DC current gain as a function of collector
current; typical values.
Fig.7
001aaa737
103
Base-emitter voltage as a function of
collector current; typical values.
001aaab059
1
VCEsat
(mV)
VCEsat
(V)
102
10-1
(1)
(2)
(3)
(1)
(2)
10-2
10
(3)
1
10−1
1
10
102
10-3
10-1
103
104
IC (mA)
1
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Oct 25
8
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
001aaa736
1.2
001aaa738
103
RCEsat
(Ω)
VBEsat
(V)
102
(1)
0.8
10
(2)
(3)
1
0.4
10−1
(1)
(2)
(3)
0
10−1
1
102
10
10−2
10−1
103
104
IC (mA)
1
10
102
103
104
IC (mA)
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
IC/IB = 20.
(1) Tamb = 100 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
001aaa733
10
(4)
(3)
(2)
IC
(A)
8
VBEon
(V)
(5)
(6)
0.8
(7)
6
001aab321
1.2
(1)
(8)
(9)
4
(10)
0.4
2
0
0
0.4
0.8
1.2
1.6
0
10−1
2
VCE (V)
(1) IB = 190 mA.
(5) IB = 114 mA.
(9) IB = 38 mA.
(2) IB = 171 mA.
(3) IB = 152 mA.
(6) IB = 95 mA.
(7) IB = 76 mA.
(10) IB = 19 mA.
(4) IB = 133 mA.
(8) IB = 57 mA.
10
102
103
104
IC (mA)
Tamb = 25 °C.
Fig.12 Collector current as a function of
collector-emitter voltage; typical values.
2004 Oct 25
1
Fig.13 Base-emitter turn-on voltage as a function
of collector current; typical values.
9
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
Reference mounting conditions
32 mm
32 mm
handbook, halfpage
10 mm
40
mm
2.5 mm
1 mm
40 mm
10 mm
3 mm
2.5 mm
2.5 mm
1 mm
1 mm
0.5 mm
0.5 mm
5 mm
5 mm
3.96 mm
3.96 mm
1.6 mm
1.6 mm
001aaa234
MLE322
Fig.15 FR4, mounting pad for collector 1 cm2.
Fig.14 FR4, standard footprint.
32 mm
30 mm
20
mm
40
mm
2.5 mm
1 mm
0.5 mm
5 mm
3.96 mm
1.6 mm
001aaa235
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Oct 25
10
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Oct 25
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
11
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
04-08-03
Philips Semiconductors
Product specification
80 V, 4 A
NPN low VCEsat (BISS) transistor
PBSS4480X
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Oct 25
12
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA76
© Koninklijke Philips Electronics N.V. 2004
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Printed in The Netherlands
R75/02/pp13
Date of release: 2004
Oct 25
Document order number:
9397 750 13924