BTA201W series E 1 A Three-quadrant triacs high commutation Rev. 02 — 17 September 2007 Product data sheet 1. Product profile 1.1 General description Passivated guaranteed commutation triacs in a surface-mounted plastic package, intended for interfacing with low-power drivers, including microcontrollers. 1.2 Features n Suitable for interfacing with low-power drivers, including microcontrollers n SOT223 surface mounted 1.3 Applications n Motor control n Solenoid drivers 1.4 Quick reference data n ITSM ≤ 12.5 A n VDRM ≤ 600 V (BTA201W-600E) n VDRM ≤ 800 V (BTA201W-800E) n IT(RMS) ≤ 1 A n IGT ≤ 10 mA 2. Pinning information Table 1. Pinning Pin Description 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) 4 main terminal 2 (T2) Simplified outline Symbol 4 T2 T1 G sym051 1 2 SOT223 3 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package BTA201W-600E Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BTA201W-800E 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM Parameter Conditions repetitive peak off-state voltage Min Max Unit - 600 V BTA201W-800E - 800 V - 1 A t = 20 ms - 12.5 A t = 16.7 ms - 13.7 A t = 10 ms - 0.78 A2s ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs BTA201W-600E IT(RMS) RMS on-state current full sine wave; Tsp ≤ 106 °C; see Figure 4 and 5 ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 [1] I2t I2t dIT/dt rate of rise of on-state current IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C [1] for fusing over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 2 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 003aab299 1.5 α Ptot (W) α = 180° α 120° 90° 1.0 60° 30° 0.5 0.0 0 0.2 0.4 0.6 0.8 1 1.2 IT(RMS) (A) α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 001aag959 16 ITSM (A) 12 8 ITSM IT 4 t T Tj(init) = 25 °C max 0 1 102 10 103 number of cycles (n) f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 3 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 001aag958 103 ITSM IT t ITSM (A) T Tj(init) = 25 °C max (1) 102 10 10−5 10−4 10−3 10−2 10−1 tp (s) tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values 001aag963 6 IT(RMS) (A) 001aag964 1.2 IT(RMS) (A) 1.0 0.8 4 0.6 0.4 2 0.2 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tsp (°C) f = 50 Hz; Tsp = 106 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of solder point temperature; maximum values BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 4 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point see Figure 6 - - 15 K/W Rth(j-a) thermal resistance from junction to ambient minimum footprint; see Figure 14 [1] - 156 - K/W for pad area; see Figure 15 [1] - 70 - K/W [1] Mounted on a printed-circuit board. 001aag969 102 Zth(j-sp) (K/W) 10 (1) 1 (2) P 10−1 10−2 10−5 tp 10−4 10−3 10−2 10−1 1 t 10 tp (s) (1) Unidirectional (2) Bidirectional Fig 6. Transient thermal impedance from junction to solder point as a function of pulse width BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 5 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit T2+ G+ - - 10 mA T2+ G− - - 10 mA T2− G− - - 10 mA T2+ G+ - - 12 mA T2+ G− - - 20 mA T2− G− - - 12 mA BTA201W-600E and BTA201W-800E IGT IL gate trigger current latching current VD = 12 V; IT = 0.1 A; see Figure 8 VD = 12 V; IGT = 0.1 A; see Figure 10 IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 - - 12 mA VT on-state voltage IT = 1.4 A; see Figure 9 - 1.2 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.2 0.3 - V VD = VDRM(max); Tj = 125 °C - 0.1 0.5 mA ID off-state current BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 6 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions Min Typ Max Unit 600 - - V/µs dVcom/dt = 20 V/µs 2.5 - - A/ms dVcom/dt = 10 V/µs 3.5 - - A/ms - 2 - µs BTA201W-600E and BTA201W-800E dVD/dt rate of rise of off-state voltage VDM = 0.67VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) = 4 A; gate open circuit gate-controlled turn-on time tgt ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 001aab101 1.6 003aaa959 3 VGT IGT VGT(25°C) IGT(25°C) 1.2 2 (1) (2) (3) 0.8 1 (3) (2) (1) 0.4 −50 0 50 100 150 Tj (°C) 0 −50 0 50 100 Tj (°C) 150 (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 7 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 003aaa960 2 001aab100 3 IT (A) IL IL(25°C) 1.6 2 1.2 (1) (2) 0.8 (3) 1 0.4 0 0 0.4 0.8 1.2 1.6 2 0 −50 0 50 100 150 Tj (°C) VT (V) Vo = 1.02 V; Rs = 358 mΩ (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage 001aab099 3 Fig 10. Normalized latching current as a function of junction temperature dVD/dt (V/µs) IH IH(25°C) 2 103 1 102 0 −50 001aag740 104 10 0 50 100 150 0 50 Tj (°C) 100 150 Tj (°C) Gate open circuit Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 8 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 8. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC SOT223 JEDEC JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig 13. Package outline SOT223 BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 9 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 9. Mounting 9.1 Mounting instructions 3.8 min 1.5 min 6.3 1.5 min (3×) 2.3 1.5 min 4.6 001aab508 All dimensions are in mm Fig 14. Minimum footprint SOT223 9.2 Printed-circuit board 36 18 60 9 4.5 4.6 10 7 15 50 001aab509 All dimensions are in mm Printed-circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick) Fig 15. Printed-circuit board pad area SOT223 BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 10 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 10. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA201W_SER_E_2 20070917 Product data sheet - BTA201W_SER_E_1 Modifications: BTA201W_SER_E_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • Legal texts have been adapted to the new company name where appropriate. Descriptive titles have been corrected. Table 3 “Limiting values” on page 2: dIT/dt uprated Table 6 “Dynamic characteristics” on page 7: dVD/dt uprated Figure 12 “Critical rate of rise of off-state voltage as a function of junction temperature; minimum values” on page 8: graph updated 20060207 Product data sheet BTA201W_SER_E_2 Product data sheet - - © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 11 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BTA201W_SER_E_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 17 September 2007 12 of 13 BTA201W series E NXP Semiconductors 1 A Three-quadrant triacs high commutation 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Mounting instructions . . . . . . . . . . . . . . . . . . . 10 Printed-circuit board . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 September 2007 Document identifier: BTA201W_SER_E_2