PHILIPS BLV93

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV93
UHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
UHF power transistor
BLV93
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial transistor primarily intended
for use in mobile radio transmitters in the 900 MHz
communications band.
• multi-base structure and emitter-ballasting resistors for
an optimum temperature profile
• internal input matching to achieve an optimum wideband
capability and high power gain
• gold metallization ensures excellent reliability.
The transistor has a 6-lead flange envelope with a ceramic
cap (SOT-171). All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance at Th = 25 °C in a common-emitter class-B test circuit
MODE OF OPERATION
VCE
V
narrow band; c.w.
ηC
%
f
MHz
PL
W
Gp
dB
12,5
900
8
>
6,5
>
50
9,6
900
6
typ.
6,0
typ.
59
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
1
e
emitter
2
e
emitter
3
b
base
4
c
collector
5
e
emitter
6
e
emitter
handbook, halfpage
2
4
c
6
b
1
Top view
3
e
5
MAM141
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV93
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
VCBOM
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
16 V
Emitter-base voltage (open collector)
VEBO
max.
3 V
d.c. or average
IC; IC AV
max.
1,6 A
(peak value); f > 1 MHz
ICM
max.
4,8 A
at Tmb = 67 °C
Ptot(dc)
max.
18 W
at Tmb = 67 °C; f > 1 MHz
Ptot(rf)
max.
24 W
Storage temperature
Tstg
−65 to +150 °C
Operating junction temperature
Tj
max.
Collector current
Total power dissipation
MDA422
10
MDA423
40
handbook, halfpage
200 °C
handbook, halfpage
Ptot
(W)
32
IC
III
(A)
Th = 60 °C
24
II
1
16
I
8
10−1
1
10
VCE (V)
0
102
0
50
100
150
Th (°C)
200
I Continuous operation
II Continuous operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz)
Rth mb-h = 0,4 K/W
Fig.2 D.C. SOAR.
Fig.3 Power/temperature derating curves.
THERMAL RESISTANCE
Dissipation = 12 W; Tmb = 112 °C
From junction to mounting base
(d.c. dissipation)
Rth j-mb(dc)
max.
7,0 K/W
(r.f. dissipation)
Rth j-mb(rf)
max.
5,2 K/W
Rth mb-h
max.
0,4 K/W
From mounting base to heatsink
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV93
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage
open emitter; IC = 20 mA
V(BR)CBO
>
36 V
V(BR)CEO
>
16 V
V(BR)EBO
>
3 V
ICES
<
10 mA
ESBR
>
2 mJ
hFE
>
fT
typ.
Cc
typ.
15 pF
Cre
typ.
9 pF
Ccf
typ.
2 pF
Collector-emitter breakdown voltage
open base; IC = 40 mA
Emitter-base breakdown voltage
open collector; IE = 2 mA
Collector cut-off current
VBE = 0; VCE = 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; RBE = 10 Ω
D.C. current gain
IC = 1,2 A; VCE = 10 V
Transition frequency at f = 500
25
MHz(1)
−IE = 1,2 A; VCE = 12,5 V
4 GHz
Collector capacitance at f = 1 MHz
IE = ie = 0; VCB = 12,5 V
Feed-back capacitance at f = 1 MHz
IC = 0; VCE = 12,5 V
Collector-flange capacitance
Note
1. Measured under pulse conditions: tp = 50 µs; δ < 1%.
MDA424
100
MDA425
5
handbook, halfpage
handbook, halfpage
fT
(GHz)
hFE
12.5 V
80
4
VCE = 10 V
60
3
40
2
20
1
0
0
0
1
2
3
IC (A)
4
0
−1.6
−2.4
−3.2
−4
IE (A)
Fig.4 Tj = 25 °C; typical values.
March 1993
−0.8
Fig.5
4
VCB = 12,5 V; f = 500 MHz; Tj = 25 °C;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV93
MDA426
26
handbook, halfpage
Cc
(pF)
22
18
14
10
0
4
8
12
16
20
VCB (V)
Fig.6 IE = ie = 0; f = 1 MHz; typical values.
APPLICATION INFORMATION
R.F. performance in c.w. operation (common-emitter circuit; class-B): f = 900 MHz; Th = 25 °C.
MODE OF OPERATION
narrow band; c.w.
March 1993
VCE
V
PL
W
12,5
8
9,6
6
PS
W
Gp
dB
ηC
%
IC
A
<
1,8
>
6,5
<
1,28
>
50
typ.
1,5
typ.
7,3
typ.
1,1
typ.
58
typ.
1,5
typ.
6,0
typ.
1,05
typ.
59
5
Philips Semiconductors
Product specification
UHF power transistor
handbook, full pagewidth
BLV93
,,,,,,
,,,,,,,
,,,,,, ,,,,,,,
C5
C1
50 Ω
L1
C2
C3
C6
T.U.T.
L4
L3
L2
C4
L5
C8
L6
C7
L8
C12
L7
C9
C10
50 Ω
C11
L9
C13
L11
R1
L10
C14
R2
+VCC
C15
MBK458
Fig.7 Class-B test circuit at f = 900 MHz.
List of components:
C1
= C12 = 33 pF multilayer ceramic chip capacitor
C2
= C3 = C10 = C11 = 1,4 to 5,5 pF film dielectric trimmer
(cat. no. 2222 809 09001)
C4
= C5 = 4,7 pF multilayer ceramic chip capacitor(1)
C6
= C7 = 5,6 pF multilayer ceramic chip capacitor(1)
C8
= C9 = 3,3 pF multilayer ceramic chip capacitor(1)
C13 = 10 pF ceramic feed-through capacitor
C14 = 6,8 µF (63 V) electrolytic capacitor
C15 = 330 pF ceramic feed-through capacitor
L1
= L7 = 50 Ω stripline (29,0 × 2,4 mm)
L2
= 50 Ω stripline (6,0 mm × 2,4 mm)
L3
= 42,7 Ω stripline (13,1 mm × 3,0 mm)
L4
= 42,7 Ω stripline (4,4 mm × 3,0 mm)
L5
= 42,7 Ω stripline (4,6 mm × 3,0 mm)
L6
= 50 Ω stripline (11,0 × 2,4 mm)
L8
= 60 nH; 4 turns closely wound enamelled Cu-wire (0,4 mm); int. dia. 3 mm; leads 2 × 5 mm
L9
= 45 nH; 4 turns enamelled Cu-wire (1,0 mm); length 6 mm; int. dia 4 mm; leads 2 × 5 mm
L10
= L11 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
R1
= R2 = 10 Ω ± 10%; 0,25 W, metal film resistor
L1 to L7 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric
(εr = 2,2); thickness 1⁄32 inch.
Note
1. American Technical Ceramics capacitor type 100A or capacitor of same quality.
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLV93
124 mm
handbook, full pagewidth
copper straps
80 mm
+VCC
C15
L10
C14
R2
R1
L8
L9
C5
L4
C1
L1
C3
C3
C13
C8
C6
L3
L2
C12
L6
C4
L11
C7
L5
L7
C9 C10
C11
MBK459
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the
other side is unetched copper serving as ground plane. Earth connections are made by
fixing screws and copper straps around the board and under the emitters to provide a
direct contact between the copper on the component side and the ground plane.
Fig.8 Printed circuit board and component lay-out for 900 MHz class-B test circuit.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV93
MDA427
10
PL
MDA428
8
80
handbook, halfpage
handbook, halfpage
Gp
(dB)
(W)
8
ηC
(%)
Gp
60
6
ηC
6
4
40
2
20
4
2
0
0
0
1
2
3
PS (W)
4
0
VCE = 9,6 V; f = 900 MHz; Th = 25 °C;
class-B operation; typical values.
2
4
6
8
PL (W)
0
10
VCE = 9,6 V; f = 900 MHz; Th = 25 °C;
class-B operation; typical values.
Fig.9 Load power vs. source power.
Fig.10 Power gain and efficiency vs. load power.
MDA429
16
MDA430
10
Gp
handbook, halfpage
handbook, halfpage
PL
(dB)
8
(W)
100
ηC
(%)
80
12
Gp
6
60
ηC
8
4
40
2
20
4
0
0
0
0
1
2
3
PS (W)
4
0
8
12
16
20
PL (W)
VCE = 12,5 V; f = 900 MHz; Th = 25 °C;
class-B operation; typical values.
VCE = 12,5 V; f = 900 MHz; Th = 25 °C;
class-B operation; typical values.
Fig.11 Load power vs. source power.
March 1993
4
Fig.12 Power gain and efficiency vs. load power.
8
Philips Semiconductors
Product specification
UHF power transistor
BLV93
RUGGEDNESS
The device is capable of withstanding a full load mismatch
(VSWR = 50; all phases) at rated load power up to a supply
voltage of 15,5 V and at Th = 25 °C.
MDA431
5
handbook, halfpage
Zi
(Ω)
ri
4
3
2
xi
1
0
800
840
920
880
960
1000
f (MHz)
VCE = 12,5 V; PL = 8 W; f = 800-960 MHz;
Th = 25 °C; class-B operation; typical values.
Fig.13 Input impedance (series components).
MDA432
8
MDA433
10
Gp
handbook, halfpage
handbook, halfpage
ZL
(Ω)
(dB)
8
6
RL
4
6
2
4
0
−2
800
2
XL
840
880
920
0
800
960
1000
f (MHz)
VCE = 12,5 V; PL = 8 W; f = 800-960 MHz;
Th = 25 °C; class-B operation; typical values.
900
950
f (MHz)
VCE = 12,5 V; PL = 8 W; f = 800-960 MHz;
Th = 25 °C; class-B operation; typical values.
Fig.14 Load impedance (series components).
March 1993
850
Fig.15 Power gain vs. frequency.
9
1000
Philips Semiconductors
Product specification
UHF power transistor
BLV93
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
D1
U1
B
q
C
w2 M C
H1
c
b1
2
H
4
6
E1
U2
1
A
3
5
E
w1 M A B
p
Q
w3 M
b
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
c
D
D1
E
E1
e
mm
6.81
6.07
2.15
1.85
3.20
2.89
0.16
0.07
9.25
9.04
9.30
8.99
5.95
5.74
6.00
5.70
3.58
inches
w1
w2
w3
0.51
1.02
0.26
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236
0.120 0.445 0.365 0.135 0.170
0.980 0.236
0.725
0.02
0.140
0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224
0.100 0.415 0.355 0.125 0.162
0.970 0.224
0.04
0.01
OUTLINE
VERSION
F
JEDEC
EIAJ
SOT171A
March 1993
H1
3.05 11.31 9.27
2.54 10.54 9.01
REFERENCES
IEC
H
p
3.43
3.17
Q
q
U1
U2
4.32
24.90 6.00
18.42
4.11
24.63 5.70
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
10
Philips Semiconductors
Product specification
UHF power transistor
BLV93
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
11