PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Rev. 03 — 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. 1.2 Features n n n n n Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n Dual low power switches (e.g. motors, fans) n Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base [1] IC collector current ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] Min Typ Max Unit - - −60 V - - −1 A - - −2 A - 250 330 mΩ PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 6 5 4 1 2 3 Graphic symbol 6 5 4 TR2 TR1 1 2 3 sym018 3. Ordering information Table 3. Ordering information Type number Package Name PBSS5160DS SC-74 Description Version plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS5160DS A5 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector V IC - −5 [1] - −0.77 A [2] - −0.9 A [3] - −1 A single pulse; tp ≤ 1 ms - −2 A - −300 mA single pulse; tp ≤ 1 ms - −1 A collector current ICM peak collector current IB base current IBM peak base current PBSS5160DS_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 2 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 290 mW [2] - 370 mW [3] - 450 mW [1] - 420 mW [2] - 560 mW [3] Per device total power dissipation Ptot Tamb ≤ 25 °C - 700 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa493 800 (1) Ptot (mW) 600 (2) (3) 400 200 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS5160DS_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 3 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - - 431 K/W [2] - - 338 K/W [3] - - 278 K/W - - 105 K/W [1] - - 298 K/W [2] - - 223 K/W [3] - - 179 K/W Per transistor thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Per device thermal resistance from junction to ambient Rth(j-a) in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa494 103 Zth(j-a) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5160DS_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 4 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 006aaa495 103 Zth(j-a) (K/W) δ=1 0.75 0.50 102 0.20 0.33 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa496 103 Zth(j-a) (K/W) δ=1 0.75 102 0.50 0.20 0.33 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5160DS_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 5 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB = −60 V; IE = 0 A - - −100 nA VCB = −60 V; IE = 0 A; Tj = 150 °C - - −50 µA - - −100 nA - - −100 nA ICES collector-emitter cut-off VCE = −60 V; VBE = 0 V current IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A hFE DC current gain VCE = −5 V; IC = −1 mA VCEsat collector-emitter saturation voltage 200 350 - VCE = −5 V; IC = −500 mA [1] 150 250 - VCE = −5 V; IC = −1 A [1] 100 160 - - −110 −165 mV IC = −100 mA; IB = −1 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −100 mA −120 −175 mV - −250 −330 mV [1] - −0.95 −1.1 V mΩ VBEsat base-emitter saturation IC = −1 A; IB = −50 mA voltage RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA [1] - 250 VBEon base-emitter turn-on voltage IC = −1 A; VCE = −5 V [1] - −0.82 −0.9 V td delay time - 11 ns tr rise time IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA - 30 - ns ton turn-on time - 41 - ns ts storage time - 205 - ns tf fall time - 55 - ns toff turn-off time - 260 - ns fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz 150 185 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 9 15 pF [1] 330 - Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS5160DS_3 Product data sheet [1] © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 6 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 006aaa474 600 006aaa478 −2.0 IB (mA) = −35.0 −31.5 −28.0 −24.5 −21.0 IC (A) (1) hFE −1.6 400 (2) −17.5 −14.0 −10.5 −1.2 −7.0 −0.8 −3.5 (3) 200 −0.4 0 −10−1 −1 −10 −102 0.0 −103 −104 IC (mA) 0 VCE = −5 V −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa476 −1.0 Fig 6. Collector current as a function of collector-emitter voltage; typical values 006aaa477 −1.1 VBEsat (V) VBE (V) −0.9 −0.8 (1) (1) −0.7 (2) (2) −0.6 −0.5 (3) (3) −0.4 −0.3 −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.1 −10−1 VCE = −5 V −1 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Fig 8. −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values PBSS5160DS_3 Product data sheet −102 IC/IB = 20 (1) Tamb = −55 °C Fig 7. −10 © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 7 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 006aaa489 −1 006aaa490 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (1) (2) (3) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. −10 Collector-emitter saturation voltage as a function of collector current; typical values 006aaa491 103 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa492 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) (1) (2) (3) 1 10−1 −10−1 −1 −10 −102 (2) 1 (3) −103 −104 IC (mA) 10−1 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5160DS_3 Product data sheet −10 © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 8 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig 14. Test circuit for switching times PBSS5160DS_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 9 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description PBSS5160DS SOT457 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping PBSS5160DS_3 Product data sheet Packing quantity © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 10 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS5160DS_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 11 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5160DS_3 20081009 Product data sheet - PBSS5160DS_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. Figure 9: amended Section 13 “Legal information”: updated PBSS5160DS_2 20050628 Product data sheet - PBSS5160DS_1 PBSS5160DS_1 20040716 Objective data sheet - - PBSS5160DS_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 12 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS5160DS_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 9 October 2008 13 of 14 PBSS5160DS NXP Semiconductors 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 October 2008 Document identifier: PBSS5160DS_3