PMF3800SN N-channel TrenchMOS standard level FET Rev. 03 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Electrostatically robust due to integrated protection diodes Saves PCB space due to small footprint Suitable for high frequency applications due to fast switching characteristics Suitable for logic level gate drive sources 1.3 Applications High-speed line drivers Relay drivers 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 60 V ID drain current Tsp = 25 °C; VGS = 10 V; see Figure 1 and 3 - - 260 mA Ptot total power dissipation Tsp = 25 °C; see Figure 2 - - 0.56 W VGS = 10 V; ID = 0.5 A; VDS = 48 V; Tj = 25 °C; see Figure 11 - 0.07 - nC - 0.85 - nC VGS = 4.5 V; ID = 200 mA; Tj = 25 °C; see Figure 9 and 10 - 3.8 5.3 Ω VGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 9 and 10 - 2.8 4.5 Ω Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Static characteristics RDSon drain-source on-state resistance PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT323 (SC-70) S 03ab60 3. Ordering information Table 3. Ordering information Type number PMF3800SN Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code[1] PMF3800SN FK* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 60 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage -15 15 V ID drain current Tsp = 100 °C; VGS = 10 V; see Figure 1 - 165 mA Tsp = 25 °C; VGS = 10 V; see Figure 1 and 3 - 260 mA IDM peak drain current Tsp = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 560 mA Ptot total power dissipation Tsp = 25 °C; see Figure 2 - 0.56 W Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C PMF3800SN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 2 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Source-drain diode IS source current Tsp = 25 °C - 280 mA ISM peak source current Tsp = 25 °C; tp ≤ 10 µs; pulsed - 560 mA HBM; C = 100 pF; R = 1.5 kΩ - 1 kV Electrostatic discharche voltage electrostatic discharge voltage VESD 03aa25 120 03aa17 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 Tsp (°C) Fig 1. 150 200 Tsp (°C) Fig 2. Normalized continuous drain current as a function of solder point temperature Normalized total power dissipation as a function of solder point temperature 03ap26 1 Limit RDSon = VDS / ID tp = 10 μs ID (A) 100 μs 10−1 1 ms 10 ms DC 100 ms 10−2 10−3 1 102 10 VDS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMF3800SN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 3 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from see Figure 4 junction to solder point Min Typ Max Unit - - 220 K/W 03ap25 103 Zth(j−sp) (K/W) 102 δ = 0.5 0.2 0.1 0.05 0.02 10 δ= P single pulse t tp 1 10−4 tp T T 10−3 10−2 10−1 1 10 tp (s) Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMF3800SN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 4 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 7. Characteristics Table 7. Symbol Characteristics Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = -55 °C 55 - - V ID = 10 µA; VGS = 0 V; Tj = 25 °C 60 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 7 and 8 0.6 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 7 and 8 - - 3.5 V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 7 and 8 1 2 3.3 V Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon V(BR)GSS drain leakage current gate leakage current drain-source on-state resistance VDS = 48 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 48 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 50 500 nA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 50 500 nA VGS = 10 V; ID = 500 mA; Tj = 150 °C; see Figure 9 and 10 - 5.2 8.4 Ω VGS = 4.5 V; ID = 200 mA; Tj = 25 °C; see Figure 9 and 10 - 3.8 5.3 Ω VGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 9 and 10 - 2.8 4.5 Ω 16 22 - V 16 22 - V - 0.85 - nC - 0.55 - nC - 0.07 - nC gate-source breakdown VDS = 0 V; Tj = 25 °C; IG = -1 mA voltage Tj = 25 °C; IG = 1 mA; VDS = 0 V Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) ID = 0.5 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; see Figure 11 VDS = 10 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 12 VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 50 Ω - 13 40 pF - 8 30 pF - 4 10 pF - - - ns - - - ns turn-off delay time - - - ns tf fall time - - - ns toff turn-off time ton turn-on time VDS = 50 V; VGS = 10 V; RG(ext) = 50 Ω; RGS = 50 Ω; Tj = 25 °C; RL = 250 Ω - 9 - ns - 3 - ns Source-drain diode VSD source-drain voltage IS = 300 mA; VGS = 0 V; Tj = 25 °C; see Figure 13 - 0.93 1.5 V trr reverse recovery time - 30 - ns Qr recovered charge IS = 300 mA; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C - 30 - nC PMF3800SN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 5 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 03an70 0.5 Tj = 25 °C ID (A) VGS (V) = 10 6.0 0.4 03an72 0.5 VDS > ID × RDSon ID (A) 0.4 4.5 0.3 4.0 0.3 0.2 3.5 0.2 0.1 3.0 0.1 0 150 °C Tj = 25 °C 0 0 0.5 1.0 1.5 2.0 0 2 4 VDS (V) Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03aa34 4 6 VGS (V) Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aa37 10−1 ID (A) VGS(th) (V) 10−2 max 3 10−3 min typ 2 typ 10−4 min 1 0 -60 Fig 7. 10−5 10−6 0 60 120 Tj (°C) 180 Gate-source threshold voltage as a function of junction temperature 0 1.2 1.8 2.4 VGS (V) Fig 8. Sub-threshold drain current as a function of gate-source voltage PMF3800SN_3 Product data sheet 0.6 © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 6 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 03an71 10 RDSon (Ω) 03aa28 2.4 Tj = 25 °C VGS (V) = 3.5 a 8 1.8 4.0 6 4.5 1.2 6.0 4 10 0.6 2 0 −60 0 0 0.1 0.2 0.3 0.4 0.5 ID (A) Fig 9. Drain-source on-state resistance as a function of drain current; typical values 03ab09 15 VGS (V) 0 60 120 180 Tj (°C) Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature 03aa46 102 C (pF) 10 Ciss 10 Coss 5 Crss 0 0 0.3 0.6 0.9 1.2 1 10−1 QG (nC) Fig 11. Gate-source voltage as a function of gate charge; typical values 102 10 VDS (V) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMF3800SN_3 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 7 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 03an73 0.5 VGS = 0 V IS (A) 0.4 0.3 0.2 150 °C Tj = 25 °C 0.1 0 0 0.3 0.6 0.9 1.2 VSD (V) Fig 13. Source current as a function of source-drain voltage; typical values PMF3800SN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 8 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 8. Package outline Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 14. Package outline SOT323 (SC-70) PMF3800SN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 9 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMF3800SN_3 20091111 Product data sheet - PMF3800SN_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Maximum value added for VGS(th) @ Tj = 25 °C in Characteristics table. PMF3800SN_2 (9397 750 20050701 15218) Product data sheet - PMF3800SN_1 PMF3800SN_1 (9397 750 20050208 14255) Product data sheet - - PMF3800SN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 10 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 10. Legal information 10.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMF3800SN_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 11 November 2009 11 of 12 PMF3800SN NXP Semiconductors N-channel TrenchMOS standard level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 November 2009 Document identifier: PMF3800SN_3