DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product specification Supersedes data of 2004 Apr 02 2004 Jun 14 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV FEATURES QUICK REFERENCE DATA • Forward current: 1 A SYMBOL • Reverse voltages: 20 V, 30 V, 40 V • Very low forward voltage PARAMETER MAX. UNIT IF forward current 1 A VR reverse voltage 20; 30; 40 V • Ultra small and very small plastic SMD package • Power dissipation comparable to SOT23. PINNING PIN APPLICATIONS DESCRIPTION PMEGXX10BEA (see Fig.1) • High efficiency DC-to-DC conversion • Voltage clamping • Protection circuits 1 cathode 2 anode PMEGXX10BEV (see Fig.2) • Low voltage rectification 1, 2, 5, 6 • Blocking diodes cathode 3, 4 • Low power consumption applications. anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) and ultra small SOT666 SMD plastic package. 1 2 1 2 sym001 Top view MARKING TYPE NUMBER The marking bar indicates the cathode. MARKING CODE PMEG2010BEA V1 PMEG3010BEA V2 PMEG4010BEA V3 PMEG2010BEV G6 PMEG3010BEV G5 PMEG4010BEV G4 Fig.1 Simplified outline (SOD323; SC-76) and symbol. 6 5 4 1, 2 5, 6 3, 4 sym038 1 2 3 Top view Fig.2 Simplified outline (SOT666) and symbol. 2004 Jun 14 2 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEGXX10BEA PMEGXX10BEV − DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD323 plastic surface mounted package; 6 leads SOT666 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage PMEG2010BEA/PMEG2010BEV − 20 V PMEG3010BEA/PMEG3010BEV − 30 V PMEG4010BEA/PMEG4010BEV − 40 V IF continuous forward current Ts ≤ 55 °C; note 1 − 1 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A IFSM non-repetitive peak forward current tp = 8 ms; square wave; note 2 − 10 A Tj junction temperature note 3 − 150 °C Tamb operating ambient temperature note 3 −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. 2004 Jun 14 3 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT K/W PMEGXX10BEA (SOD323) Rth(j-a) thermal resistance from junction to ambient in free air; notes 1 and 2 450 in free air; notes 2 and 3 210 K/W Rth(j-s) thermal resistance from junction to soldering point note 4 90 K/W thermal resistance from junction to ambient in free air; notes 2 and 5 405 K/W in free air; notes 2 and 6 215 K/W thermal resistance from junction to soldering point note 4 80 K/W PMEGXX10BEV (SOT666) Rth(j-a) Rth(j-s) Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. 4. Solder point of cathode tab. 5. Refer to SOT666 standard mounting conditions. 6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/ PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT TYP. VF IR Cd forward voltage MAX. TYP. MAX. 90 130 90 130 95 130 mV IF = 1 mA 150 190 150 200 155 210 mV IF = 10 mA 210 240 215 250 220 270 mV IF = 100 mA 280 330 285 340 295 350 mV IF = 500 mA 355 390 380 430 420 470 mV IF = 1000 mA 420 500 450 560 540 640 mV 15 40 12 30 7 20 µA 40 200 − − − − µA VR = 30 V; note 1 − − 40 150 − − µA VR = 40 V; note 1 − − − − 30 100 µA VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Jun 14 TYP. IF = 0.1 mA continuous reverse VR = 10 V; note 1 current VR = 20 V; note 1 diode capacitance MAX. 4 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV GRAPHICAL DATA MHC673 104 handbook, halfpage MHC674 105 handbook, halfpage IF (mA) IR (µA) 103 (1) 104 (1) 102 (2) (3) 103 10 102 1 10 (2) (3) 10−1 0 0.2 0.4 VF (V) 1 0.6 0 5 10 PMEG2010BEA/PMEG2010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG2010BEA/PMEG2010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.3 Fig.4 Forward current as a function of forward voltage; typical values. MHC675 140 15 20 Reverse current as a function of reverse voltage; typical values. MHC676 104 handbook, halfpage Cd halfpage handbook, VR (V) IF (mA) (pF) 120 103 100 (1) 102 80 60 (2) (3) 10 40 1 20 10−1 0 0 5 10 15 VR (V) 20 0.4 VF (V) 0.6 (3) Tamb = 25 °C. Diode capacitance as a function of reverse voltage; typical values. 2004 Jun 14 0.2 PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. PMEG2010BEA/PMEG2010BEV Tamb = 25 °C; f = 1 MHz. Fig.5 0 Fig.6 5 Forward current as a function of forward voltage; typical values. Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV MHC677 105 MHC678 120 d (pF) 100 handbook, C halfpage IR (µA) (1) 104 80 103 (2) 60 102 40 (3) 10 1 20 0 5 10 15 20 0 25 30 VR (V) 0 5 10 15 VR (V) 20 PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG3010BEA/PMEG3010BEV Tamb = 25 °C; f = 1 MHz. Fig.7 Fig.8 Reverse current as a function of reverse voltage; typical values. MHC679 104 handbook, halfpage MHC680 105 handbook, halfpage IR (µA) IF (mA) 103 (1) 104 (1) 102 (2) (3) 103 10 102 1 10 10−1 Diode capacitance as a function of reverse voltage; typical values. 0 0.2 0.4 VF (V) 1 0.6 (2) (3) 0 10 20 30 VR (V) 40 PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.9 Fig.10 Reverse current as a function of reverse voltage; typical values. Forward current as a function of forward voltage; typical values. 2004 Jun 14 6 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV MHC681 100 Cd (pF) handbook, halfpage 80 60 40 20 0 0 5 10 15 VR (V) 20 PMEG4010BEA/PMEG4010BEV Tamb = 25 °C; f = 1 MHz. Fig.11 Diode capacitance as a function of reverse voltage; typical values. 2004 Jun 14 7 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV PACKAGE OUTLINES Plastic surface mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Jun 14 REFERENCES IEC JEDEC JEITA SC-76 8 EUROPEAN PROJECTION ISSUE DATE 99-09-13 03-12-17 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2004 Jun 14 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Jun 14 10 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp11 Date of release: 2004 Jun 14 Document order number: 9397 750 13234