PHILIPS PMEG3010BEA

DISCRETE SEMICONDUCTORS
DATA SHEET
PMEGXX10BEA;
PMEGXX10BEV
1 A very low VF MEGA Schottky
barrier rectifier
Product specification
Supersedes data of 2004 Apr 02
2004 Jun 14
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
QUICK REFERENCE DATA
• Forward current: 1 A
SYMBOL
• Reverse voltages: 20 V, 30 V, 40 V
• Very low forward voltage
PARAMETER
MAX.
UNIT
IF
forward current
1
A
VR
reverse voltage
20; 30; 40
V
• Ultra small and very small plastic SMD package
• Power dissipation comparable to SOT23.
PINNING
PIN
APPLICATIONS
DESCRIPTION
PMEGXX10BEA (see Fig.1)
• High efficiency DC-to-DC conversion
• Voltage clamping
• Protection circuits
1
cathode
2
anode
PMEGXX10BEV (see Fig.2)
• Low voltage rectification
1, 2, 5, 6
• Blocking diodes
cathode
3, 4
• Low power consumption applications.
anode
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
1
2
1
2
sym001
Top view
MARKING
TYPE NUMBER
The marking bar indicates the cathode.
MARKING CODE
PMEG2010BEA
V1
PMEG3010BEA
V2
PMEG4010BEA
V3
PMEG2010BEV
G6
PMEG3010BEV
G5
PMEG4010BEV
G4
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
6
5
4
1, 2
5, 6
3, 4
sym038
1
2
3
Top view
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14
2
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PMEGXX10BEA
PMEGXX10BEV
−
DESCRIPTION
VERSION
plastic surface mounted package; 2 leads
SOD323
plastic surface mounted package; 6 leads
SOT666
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV
−
20
V
PMEG3010BEA/PMEG3010BEV
−
30
V
PMEG4010BEA/PMEG4010BEV
−
40
V
IF
continuous forward current
Ts ≤ 55 °C; note 1
−
1
A
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.5; note 2
−
3.5
A
IFSM
non-repetitive peak forward current
tp = 8 ms; square wave;
note 2
−
10
A
Tj
junction temperature
note 3
−
150
°C
Tamb
operating ambient temperature
note 3
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
2004 Jun 14
3
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
PMEGXX10BEA (SOD323)
Rth(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2
450
in free air; notes 2 and 3
210
K/W
Rth(j-s)
thermal resistance from junction to
soldering point
note 4
90
K/W
thermal resistance from junction to
ambient
in free air; notes 2 and 5
405
K/W
in free air; notes 2 and 6
215
K/W
thermal resistance from junction to
soldering point
note 4
80
K/W
PMEGXX10BEV (SOT666)
Rth(j-a)
Rth(j-s)
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/
PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT
TYP.
VF
IR
Cd
forward voltage
MAX.
TYP.
MAX.
90
130
90
130
95
130
mV
IF = 1 mA
150
190
150
200
155
210
mV
IF = 10 mA
210
240
215
250
220
270
mV
IF = 100 mA
280
330
285
340
295
350
mV
IF = 500 mA
355
390
380
430
420
470
mV
IF = 1000 mA
420
500
450
560
540
640
mV
15
40
12
30
7
20
µA
40
200
−
−
−
−
µA
VR = 30 V; note 1
−
−
40
150
−
−
µA
VR = 40 V; note 1
−
−
−
−
30
100
µA
VR = 1 V; f = 1 MHz
66
80
55
70
43
50
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jun 14
TYP.
IF = 0.1 mA
continuous reverse VR = 10 V; note 1
current
VR = 20 V; note 1
diode capacitance
MAX.
4
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
GRAPHICAL DATA
MHC673
104
handbook, halfpage
MHC674
105
handbook, halfpage
IF
(mA)
IR
(µA)
103
(1)
104
(1)
102
(2)
(3)
103
10
102
1
10
(2)
(3)
10−1
0
0.2
0.4
VF (V)
1
0.6
0
5
10
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3
Fig.4
Forward current as a function of forward
voltage; typical values.
MHC675
140
15
20
Reverse current as a function of reverse
voltage; typical values.
MHC676
104
handbook, halfpage
Cd halfpage
handbook,
VR (V)
IF
(mA)
(pF)
120
103
100
(1)
102
80
60
(2)
(3)
10
40
1
20
10−1
0
0
5
10
15
VR (V)
20
0.4
VF (V)
0.6
(3) Tamb = 25 °C.
Diode capacitance as a function of reverse
voltage; typical values.
2004 Jun 14
0.2
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
PMEG2010BEA/PMEG2010BEV
Tamb = 25 °C; f = 1 MHz.
Fig.5
0
Fig.6
5
Forward current as a function of forward
voltage; typical values.
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
MHC677
105
MHC678
120
d
(pF)
100
handbook,
C halfpage
IR
(µA)
(1)
104
80
103
(2)
60
102
40
(3)
10
1
20
0
5
10
15
20
0
25
30
VR (V)
0
5
10
15
VR (V)
20
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
PMEG3010BEA/PMEG3010BEV
Tamb = 25 °C; f = 1 MHz.
Fig.7
Fig.8
Reverse current as a function of reverse
voltage; typical values.
MHC679
104
handbook, halfpage
MHC680
105
handbook, halfpage
IR
(µA)
IF
(mA)
103
(1)
104
(1)
102
(2)
(3)
103
10
102
1
10
10−1
Diode capacitance as a function of reverse
voltage; typical values.
0
0.2
0.4
VF (V)
1
0.6
(2)
(3)
0
10
20
30
VR (V)
40
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.9
Fig.10 Reverse current as a function of reverse
voltage; typical values.
Forward current as a function of forward
voltage; typical values.
2004 Jun 14
6
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
MHC681
100
Cd
(pF)
handbook, halfpage
80
60
40
20
0
0
5
10
15
VR (V)
20
PMEG4010BEA/PMEG4010BEV
Tamb = 25 °C; f = 1 MHz.
Fig.11 Diode capacitance as a function of reverse
voltage; typical values.
2004 Jun 14
7
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
PACKAGE OUTLINES
Plastic surface mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
2004 Jun 14
REFERENCES
IEC
JEDEC
JEITA
SC-76
8
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
03-12-17
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2004 Jun 14
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Jun 14
10
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp11
Date of release: 2004
Jun 14
Document order number:
9397 750 13234