PHILIPS PZM4.7NB1

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PZM-N series
Voltage regulator diodes
Product specification
Supersedes data of 1997 Dec 15
1999 Jan 28
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
PZM-N series
PINNING
• Total power dissipation:
max. 300 mW
PIN
• Small plastic package suitable for
surface mounted design
• Wide working voltage range:
nom. 2.4 to 75 V (E24 range).
DESCRIPTION
1
anode
2
not connected
3
cathode
handbook, halfpage
3
APPLICATIONS
• General regulation functions.
2
n.c.
DESCRIPTION
Low power general purpose voltage
regulator diode in a SOT346 (SC59)
plastic package, suitable for surface
mounted design.
1
3
1
2
Top view
MAM378
Fig.1 Simplified outline (SOT346; SC59) and symbol.
MARKING
MARKING CODE
TYPE
NUMBER
B
PZM2.4N
2V4
−
PZM2.7N
2V7
271
PZM3.0N
3V0
301
PZM3.3N
3V3
PZM3.6N
3V6
PZM3.9N
MARKING CODE
B3
TYPE
NUMBER
B
B1
B2
B3
−
−
PZM15N
15V
151
152
153
272
−
PZM16N
16V
161
162
163
302
−
PZM18N
18V
181
182
183
331
332
−
PZM20N
20V
201
202
203
361
362
−
PZM22N
22V
221
222
223
3V9
391
392
−
PZM24N
24V
241
242
243
PZM4.3N
4V3
431
432
433
PZM27N
27V
−
−
−
PZM4.7N
4V7
471
472
473
PZM30N
30V
−
−
−
PZM5.1N
5V1
511
512
513
PZM33N
33V
−
−
−
PZM5.6N
5V6
561
562
563
PZM36N
36V
−
−
−
PZM6.2N
6V2
621
622
623
PZM39N
39V
−
−
−
PZM6.8N
6V8
681
682
683
PZM43N
43V
−
−
−
PZM7.5N
7V5
751
752
753
PZM47N
47V
−
−
−
PZM8.2N
8V2
821
822
823
PZM51N
51V
−
−
−
PZM9.1N
9V1
911
912
913
PZM56N
56V
−
−
−
PZM10N
10V
101
102
103
PZM62N
62V
−
−
−
B1
B2
PZM11N
11V
111
112
113
PZM68N
68V
−
−
−
PZM12N
12V
121
122
123
PZM75N
75V
−
−
−
PZM13N
13V
131
132
133
−
−
−
−
−
1999 Jan 28
2
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
250
UNIT
IF
continuous forward current
IZSM
non-repetitive peak current
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
see Tables 1 and 2
mA
Ptot
total power dissipation
Tamb = 25 °C
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point Ts = 60 °C
VALUE
300
UNIT
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
1999 Jan 28
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
IF = 100 mA; see Fig.2
1.1
V
PZM2.4N
VR = 1 V
50
µA
PZM2.7N
VR = 1 V
20
µA
PZM3.0N
VR = 1 V
10
µA
PZM3.3N
VR = 1 V
5
µA
PZM3.6N
VR = 1 V
5
µA
PZM3.9N
VR = 1 V
3
µA
PZM4.3N
VR = 1 V
3
µA
PZM4.7N
VR = 1 V
3
µA
PZM5.1N
VR = 1.5 V
3
µA
PZM5.6N
VR = 2.5 V
2
µA
PZM6.2N
VR = 3.0 V
2
µA
PZM6.8N
VR = 3.5 V
2
µA
PZM7.5N
VR = 4.0 V
1
µA
PZM8.2N
VR = 5.0 V
700
nA
PZM9.1N
VR = 6.0 V
500
nA
PZM10N
VR = 7.0 V
200
nA
PZM11N
VR = 8.0 V
100
nA
PZM12N
VR = 9.0 V
100
nA
PZM13N
VR = 10.0 V
100
nA
PZM15N
VR = 11.0 V
70
nA
PZM16N
VR = 12.0 V
70
nA
3
Philips Semiconductors
Product specification
Voltage regulator diodes
SYMBOL
IR
1999 Jan 28
PZM-N series
PARAMETER
CONDITIONS
MAX.
UNIT
reverse current
PZM18N
VR = 13.0 V
70
nA
PZM20N
VR = 15.0 V
70
nA
PZM22N
VR = 17.0 V
70
nA
PZM24N
VR = 19.0 V
70
nA
PZM27N
VR = 21.0 V
70
nA
PZM30N
VR = 23.0 V
70
nA
PZM33N
VR = 25.0 V
70
nA
PZM36N
VR = 27.0 V
70
nA
PZM39N
VR = 0.7 VZnom
50
nA
PZM43N
VR = 0.7 VZnom
50
nA
PZM47N
VR = 0.7 VZnom
50
nA
PZM51N
VR = 0.7 VZnom
50
nA
PZM56N
VR = 0.7 VZnom
50
nA
PZM62N
VR = 0.7 VZnom
50
nA
PZM68N
VR = 0.7 VZnom
50
nA
PZM75N
VR = 0.7 VZnom
50
nA
4
PZM
-XXX
B
B1
B2
5
MIN.
MAX.
2.4N
2.30
2.60
2.7N
2.50
2.90
2.50
2.75
2.65
3.0N
2.80
3.20
2.80
3.05
3.3N
3.10
3.50
3.10
3.35
3.6N
3.40
3.80
3.40
3.9N
3.70
4.10
4.3N
4.01
4.48
4.7N
4.42
5.1N
5.6N
IZ = 1 mA
B3
IZ = 5 mA
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
−
−
−
−
−
−
275
400
70
100
−1.6
450
8.00
2.90
−
−
300
450
75
100
−2.0
440
8.00
2.95
3.20
−
−
325
3.25
3.50
−
−
350
500
80
95
−2.1
425
8.00
500
85
95
−2.4
410
8.00
3.65
3.55
3.80
−
−
375
500
85
90
−2.4
390
8.00
3.70
3.97
3.87
4.10
−
4.01
4.21
4.15
4.34
4.28
4.48
400
500
85
90
−2.5
370
8.00
410
600
80
90
−2.5
350
8.00
4.90
4.42
4.61
4.55
4.75
4.69
4.90
425
500
50
80
−1.4
325
8.00
4.84
5.37
4.84
5.04
4.98
5.20
5.31
5.92
5.31
5.55
5.49
5.73
5.14
5.37
400
480
40
60
−0.8
300
8.00
5.67
5.92
80
400
15
40
1.2
275
8.00
6.2N
5.86
6.53
5.86
6.12
6.06
6.33
6.26
6.53
40
150
6
10
2.3
250
8.00
6.8N
6.47
7.14
6.47
6.73
7.5N
7.06
7.84
7.06
7.36
6.65
6.93
6.86
7.14
30
80
6
15
3.0
215
8.00
7.28
7.60
7.52
7.84
15
80
2
10
4.0
170
3.50
8.2N
7.76
8.64
7.76
8.10
8.02
8.36
8.28
8.64
20
80
2
10
4.6
150
3.50
9.1N
8.56
9.55
8.56
8.93
8.85
9.23
9.15
9.55
20
100
2
10N
9.45
10.55
9.45
9.87
9.77
10.21
10.11
10.55
20
150
2
10
5.5
120
3.50
10
6.4
110
3.50
11N
10.44
11.56
10.44
10.88
10.76
11.22
11.10
11.56
25
150
2
10
7.4
108
3.00
12N
11.42
12.60
11.42
11.90
11.74
12.24
12.08
12.60
25
150
2
10
8.4
105
3.00
13N
12.47
13.96
12.47
13.03
12.91
13.49
13.37
13.96
25
15N
13.84
15.52
13.84
14.46
14.34
14.98
14.85
15.52
25
170
2
10
9.4
103
2.50
200
3
15
11.4
99
2.00
16N
15.37
17.09
15.37
16.01
15.85
16.51
16.35
17.09
25
200
4
20
12.4
97
1.50
18N
16.94
19.03
16.94
17.70
17.56
18.35
18.21
20N
18.86
21.08
18.86
19.70
19.52
20.39
20.21
19.03
25
225
4
20
14.4
93
1.50
21.08
30
225
4
20
16.4
88
1.50
22N
20.88
23.17
20.88
21.77
21.54
22.47
22.23
23.17
30
250
5
25
18.4
84
1.25
24N
22.93
25.57
22.93
23.96
23.72
24.78
24.54
25.57
30
250
6
30
20.4
80
1.25
−
TYP. MAX. TYP. MAX.
MAX.
Product specification
MAX.
DIODE
NON-REPETITIVE
CAP.
PEAK REVERSE
Cd (pF)
CURRENT
at
IZSM (A)
f = 1 MHz;
at tp = 100 µs;
VR = 0
Tamb = 25 °C
PZM-N series
MIN.
TEMP.
COEFF.
SZ (mV/K)
at
IZ = 5 mA
Philips Semiconductors
DIFFERENTIAL
RESISTANCE
rdif (Ω)
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA; tm = 40 ms
Voltage regulator diodes
1999 Jan 28
Table 1 Per type; PZM2.4N to PZM24N
Tj = 25 °C unless otherwise specified.
PZM
-XXX
B
B1
B2
IZ = 0.5 mA
B3
DIODE
NON-REPETITIVE
CAP.
PEAK REVERSE
Cd (pF)
CURRENT
at
IZSM (A)
f = 1 MHz;
at tp = 100 µs;
VR = 0
Tamb = 25 °C
IZ = 2 mA
TEMP.
COEFF.
SZ (mV/K)
at
IZ = 2 mA
TYP. MAX.
TYP.
MAX.
6
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
MAX.
27N
25.10
28.90
−
−
−
−
−
−
35
250
8
40
23.4
73
1.00
30N
28.00
32.00
−
−
−
−
−
−
35
250
10
40
26.6
66
1.00
33N
31.00
35.00
−
−
−
−
−
−
40
275
11
40
29.7
60
0.90
36N
34.00
38.00
−
−
−
−
−
−
40
300
15
60
33.0
59
0.80
39N
37.00
41.00
−
−
−
−
−
−
40
300
25
75
36.4
58
0.70
43N
40.00
46.00
−
−
−
−
−
−
45
325
30
80
41.2
56
0.60
47N
44.00
50.00
−
−
−
−
−
−
45
325
30
90
46.1
55
0.50
51N
48.00
54.00
−
−
−
−
−
−
45
350
35
110
51.0
52
0.40
56N
52.00
60.00
−
−
−
−
−
−
50
375
40
120
57.0
49
0.30
62N
58.00
66.00
−
−
−
−
−
−
60
400
50
140
64.4
44
0.30
68N
64.00
72.00
−
−
−
−
−
−
75
400
55
160
71.7
40
0.25
75N
70.00
79.00
−
−
−
−
−
−
85
400
70
175
80.2
35
0.20
Philips Semiconductors
DIFFERENTIAL
RESISTANCE
rdif (Ω)
WORKING VOLTAGE
VZ (V)
at IZ = 2 mA; tm = 40 ms
Voltage regulator diodes
1999 Jan 28
Table 2 Per type; PZM27N to PZM75N
Tj = 25 °C unless otherwise specified.
Product specification
PZM-N series
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
GRAPHICAL DATA
MBG781
MBG783
300
0
handbook, halfpage
handbook, halfpage
IF
(mA)
SZ
(mV/K)
4V3
−1
200
3V9
3V6
−2
100
3V3
3V0
2V4
2V7
0
0.6
0.8
VF (V)
−3
1.0
0
20
40
IZ (mA)
60
PZM2.4N to PZM4.3N.
Tj = 25 °C to 150 °C.
Tj = 25 °C.
Fig.2
Forward current as a function of
forward voltage; typical values.
Fig.3
Temperature coefficient as a function of
working current; typical values.
MBG782
10
handbook, halfpage
SZ
(mV/K)
MBK204
400
handbook, halfpage
12
Ptot
(mW)
11
10
300
9V1
5
8V2
7V5
6V8
6V2
200
5V6
5V1
0
4V7
100
−5
0
4
8
12
16
IZ (mA)
0
20
0
50
100
150
Tj (°C)
PZM4.7N to PZM12N.
Tj = 25 °C to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
1999 Jan 28
Fig.5 Power derating curve.
7
200
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT346
E
D
A
B
X
HE
v M A
3
Q
A
A1
1
c
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
1.9
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
OUTLINE
VERSION
SOT346
1999 Jan 28
REFERENCES
IEC
JEDEC
EIAJ
TO-236
SC-59
8
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jan 28
9
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
NOTES
1999 Jan 28
10
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
NOTES
1999 Jan 28
11
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Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 Jan 28
Document order number:
9397 750 04983