DISCRETE SEMICONDUCTORS DATA SHEET M3D126 BCY87; BCY88; BCY89 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 PINNING FEATURES • Low current (max. 30 mA) PIN(1) • Low voltage (max. 45 V). 1 emitter TR1 2 emitter TR2 APPLICATIONS 3 collector TR2 • Differential amplifier applications in general industrial service e.g. instrumentation and control 4 basis TR2 5 basis TR1 6 collector TR1 • The BCY87 and BCY88 are intended for use in pre-stages of differential amplifiers where low offset, low drift and low noise are of prime importance DESCRIPTION Note • The BCY89 is intended for use in second stages of differential amplifiers, long-tailed pairs and more general applications. 1. All leads insulated from the case. handbook, halfpage DESCRIPTION 6 4 2 1 2 Matched dual NPN transistors in a TO-71; SOT31 metal package. Products are divided into 3 types according to their matching accuracy. TR2 3 6 TR1 5 4 MAM351 Fig.1 1 5 3 Simplified outline (TO-71; SOT31) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − 45 V VCEO collector-emitter voltage open base − 40 V Ptot total power dissipation Tamb ≤ 25 °C − 150 mW hFE DC current gain VCE = 10 V 80 − BCY87 IC = 5 µA BCY88 IC = 500 µA 120 600 BCY89 IC = 10 mA 100 600 hFE DC current gain IC = 50 µA; VCE = 10 V 100 450 fT transition frequency IC = −50 µA; VCE = 10 V; f = 100 MHz 10 − MHz IC = −500 µA; VCE = 10 V; f = 100 MHz 50 − MHz 1997 Jun 20 2 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 30 mA Ptot total power dissipation Tamb ≤ 25 °C − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 1 K/mW in free air CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ICBO ICBO collector cut-off current IE = 0; VCB = 20 V; Tamb = 90 °C BCY87 − − 5 nA BCY88 − − 20 nA − − 10 nA collector cut-off current IE = 0; VCB = 20 V BCY89 hFE DC current gain VCE = 10 V BCY87 IC = 5 µA 80 − − BCY88 IC = 500 µA 120 − 600 IC = 10 mA 100 − 600 100 − 450 BCY89 hFE DC current gain IC = 50 µA; VCE = 10 V Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 3.5 pF fT transition frequency IE = −50 µA; VCE = 10 V; f = 100 MHz 10 − − MHz IE = −500 µA; VCE = 10 V; f = 100 MHz 50 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz − − 4 dB F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 4 dB − − 5 dB BCY87 BCY88; BCY89 1997 Jun 20 3 Philips Semiconductors Product specification NPN general purpose transistors SYMBOL BCY87; BCY88; BCY89 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Complete device; note 1 I 1C ------I 2C ratio of collector currents V1B − 1E = V2B − 2E BCY87 0.9 − 1.11 BCY88 0.8 − 1.25 0.67 − 1.5 BCY87 − − 3 mV BCY88 − − 6 mV BCY89 − − 10 mV BCY87 − − 25 nA BCY88 − − 80 nA BCY89 − − 300 nA BCY87 0.9 − 1.11 BCY88 0.8 − 1.25 BCY89 V 1B – 1E – V 2B – 2E I 1B – I 2B h 1FE ----------h 2FE ∆V -------∆T ∆I ------∆T difference between base-emitter voltages difference between base currents DC current gain ratio I1C = I2C V1B − 1E = V2B − 2E I1C = I2C equivalent differential voltage Tamb = −20 °C to +90 °C BCY87 − 1 3 µV/K BCY88 − 2 6 µV/K BCY89 − 4 10 µV/K BCY87 − − 0.5 nA/K BCY88 − − 2 nA/K BCY89 − − 10 nA/K equivalent differential current Tamb = −20 °C to +90 °C Note 1. These characteristics are valid under the following conditions: a) Collector-base voltage of both transistors not exceeding 10 V; (V1C − 1B = V2C − 2B ≤ 10 V). b) Sum of the emitter currents from 10 to 100 µA; −(I1E + I2E) = 10 to 100 µA. 1997 Jun 20 4 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 6 leads j SOT31 α seating plane B w M A M B M 1 2 b 3 k D1 6 5 4 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A max. a b max. D max. D1 max. j max. k max. L min. w α mm 5.3 2.54 0.51 5.8 4.8 1.16 1.17 12.7 0.35 45° OUTLINE VERSION SOT31 1997 Jun 20 REFERENCES IEC JEDEC EIAJ TO-71 EUROPEAN PROJECTION ISSUE DATE 97-06-18 5 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 20 6 Philips Semiconductors Product specification NPN general purpose transistors BCY87; BCY88; BCY89 NOTES 1997 Jun 20 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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