PHILIPS BLW83

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW83
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor for use in transmitting
amplifiers operating in the h.f. and
v.h.f. bands, with a nominal supply
voltage of 28 V. The transistor is
specified for s.s.b. applications as
linear amplifier in class-A and AB.
The device is resistance stabilized
and is guaranteed to withstand
severe load mismatch conditions.
BLW83
Matched hFE groups are available on
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance
VCE
V
f
MHz
PL
W
s.s.b. (class-A)
26
1,6 − 28
0 − 10 (P.E.P.)
>
s.s.b. (class-AB)
28
1,6 − 28
3 − 30 (P.E.P.)
typ. 21
MODE OF OPERATION
Gp
dB
PIN CONFIGURATION
20
ηdt
%
IC
A
−
d3
dB
typ. 40 typ. 1,34
−40
70
typ. −30
25
PINNING - SOT123
PIN
halfpage
1
<
1,35
Th
°C
4
c
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, halfpage
b
e
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
65 V
Collector-emitter voltage (open base)
VCEO
max.
36 V
Emitter-base voltage (open-collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
3 A
Collector current (peak value); f > 1 MHz
ICM
max.
9 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
76 W
Storage temperature
Tstg
Operating junction temperature
Tj
−65 to + 150 °C
200 °C
max.
MGP587
MGP586
100
10
handbook, halfpage
handbook, halfpage
IC
(A)
short-time
operation
during mismatch
continuous
r.f. operation
derate by
0.42 W/K
Prf
(W)
Tmb = 25 °C
Th = 70 °C
50
1
continuous
d.c. operation
derate by 0.32 W/K
10−1
1
10
VCE (V)
0
102
0
50
100
Th (°C)
150
Fig.3 R.F. power dissipation; VCE ≤ 28 V; f ≥ 1 MHz.
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 35 W; Tmb = 80 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
3,15 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
2,35 K/W
From mounting base to heatsink
Rth mb-h
=
0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
V(BR)CES
>
65 V
V(BR)CEO
>
36 V
V(BR)EBO
>
4 V
ICES
<
4 mA
open base
ESBO
>
8 mJ
RBE = 10 Ω
ESBR
>
VBE = 0; IC = 10 mA
Collector-emitter breakdown voltage
open base; IC = 50 mA
Emitter-base breakdown voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain (1)
8 mJ
typ.
IC = 1,25 A; VCE = 5 V
hFE
D.C. current gain ratio of matched
50
10 to 100
devices(1)
hFE1/hFE2
<
1,2
VCEsat
typ.
1,5 V
−IE = 1,25 A; VCB = 28 V
fT
typ.
530 MHz
−IE = 3,75 A; VCB = 28 V
fT
typ.
530 MHz
Cc
typ.
50 pF
IC = 100 mA; VCE = 28 V
Cre
typ.
31 pF
Collector-flange capacitance
Ccf
typ.
2 pF
IC = 1,25 A; VCE = 5 V
Collector-emitter saturation
voltage(1)
IC = 3,75 A; IB = 0,75 A
Transition frequency at f = 100 MHz(1)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
MGP588
3
handbook, halfpage
IC
(A)
Th = 70 °C
25 °C
2
1
Fig.4 Typical values; VCE = 28 V.
August 1986
0
0
1
4
VBE (V)
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
MGP589
75
MGP590
150
handbook, halfpage
handbook, halfpage
VCE = 28 V
hFE
Cc
(pF)
5V
50
100
typ
25
50
0
0
0
5
IC (A)
0
10
Fig.5 Typical values; Tj = 25 °C.
20
VCB (V)
40
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP591
600
handbook, full pagewidth
fT
(MHz)
VCB = 28 V
400
15 V
200
0
0
2
4
6
Fig.7 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
8
−IE (A)
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
APPLICATION INFORMATION
R.F. performance in s.s.b. class-A operation (linear power amplifier)
VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
W
>
10 (P.E.P.)
Gp
dB
IC
A
d3
dB(1)
d5
dB(1)
Th
°C
20
1,35
−40
< −40
70
typ. 24
1,35
−40
< −40
25
>
typ. 11 (P.E.P.)
typ. 12 (P.E.P.)
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
L5
C1
L1
50 Ω
C10
50 Ω
R3
T.U.T.
C11
C5
R4
C2
L4
L3
C7
C6
R7
C8
C3
C4
L2
R5
R8
+VCC
R9
BY206
BD204
R6
R1
MGP592
R2
Fig.8 Test circuit; s.s.b. class-A.
August 1986
C9
6
C12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
List of components in Fig.8:
C1
=
C2 = 10 to 780 pF film dielectric trimmer
C3
=
22 nF ceramic capacitor (63 V)
C4
=
47 µF/10 V electrolytic capacitor
C5
=
56 pF ceramic capacitor (500 V)
C6
=
47 µF/35 V electrolytic capacitor
C7
=
C8 = 220 nF polyester capacitor
C9
=
10 µF/35 V electrolytic capacitor
C10 =
C11 = 7 to 100 pF film dielectric trimmer
C12 =
82 pF ceramic capacitor (500 V)
L1
=
3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads to 2 × 5 mm
L2
=
L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4
=
11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
L5
=
14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
R1
=
600 Ω; parallel connection of 2 × 1,2 kΩ carbon resistors (±5%; 0,5 W each)
R2
=
15 Ω carbon resistor (±5%; 0,25 W)
R3
=
1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors (±5%; 0,125 W each)
R4
=
33 Ω carbon resistor (±5%; 0,25 W)
R5
=
18 Ω carbon resistor (±5%; 0,25 W)
R6
=
120 Ω wirewound resistor (±5%; 5,5 W)
R7
=
1 Ω carbon resistor (±5%; 0,125 W)
R8
=
47 Ω wirewound potentiometer (3 W)
R9
=
1,57 Ω; parallel connection of 3 × 4,7 Ω wirewound resistors ( 5%; 5,5 W each)
MGP593
−20
handbook, halfpage
d3
(dB)
IC = 0.8 A 1 A 1.35 A
−40
−60
Fig.9
August 1986
0
5
10 P.E.P. (W) 15
Intermodulation distortion as a function of output power.
Typical values; VCE = 26 V; —— Th = 70 °C; − − − Th = 25 °C.
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
VCE = 28 V; f1 = 28,000 MHz; f2 = 28,001 MHz
ηdt (%)
OUTPUT POWER
Gp
W
dB
3 to 30 (P.E.P.)
typ. 21
typ. 40
3 to 25 (P.E.P.)
typ. 21
−
IC (A)
d3
d5
IC(ZS)
Th
dB(1)
dB(1)
mA
°C
typ. 1,34
typ. −30
< −30
25
25
−
typ. −30
< −30
25
70
at 30 W P.E.P.
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
L4
C1
L1
50 Ω
C7
50 Ω
R1
T.U.T.
C8
C4
L3
C2
R2
L2
temperature
compensated bias
+VCC
C3
C5
C6
MGP594
Fig.10 Test circuit; s.s.b. class-AB.
List of components:
C1
=
C2 = 10 to 780 pF film dielectric trimmer
C3
=
C5 = C6 = 220 nF polyester capacitor
C4
=
56 pF ceramic capacitor (500 V)
C7
=
C8 = 15 to 575 pF film dielectric trimmer
L1
=
4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2 × 5 mm
L2
=
Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3
=
4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2 × 5 mm
L4
=
7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2 × 5 mm
R1
=
1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors
R2
=
39 Ω carbon resistor
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
MGP595
−20
MGP596
60
handbook, halfpage
Th =
90 °C
70 °C
50 °C
25 °C
d3, d5
(dB)
d3
30
handbook, halfpage
ηdt
(%)
Gp
(dB)
Gp
−30
40
20
ηdt
d5
Th =
90 °C
70 °C
50 °C
25 °C
−40
−50
0
20
P.E.P. (W)
20
10
0
40
0
0
20
P.E.P. (W)
40
VCE = 28 V; IC(ZS) = 25 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; typical values
VCE = 28 V; IC(ZS) = 25 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values
Fig.11 Intermodulation distortion as a function of
output power.(1)
Fig.12 Double-tone efficiency and power gain as a
function of output power.
MGP597
40
MGP598
20
handbook, halfpage
handbook, halfpage
Gp
(dB)
−2.5
ri
ri
(Ω)
xi
(Ω)
30
15
−5
20
10
−7.5
xi
−10
5
10
0
0
1
10
f (MHz)
102
1
VCE = 28 V; IC(ZS) = 25 mA; PL = 30 W; Th = 25 °C; ZL = 9,5 Ω
f (MHz)
102
−12.5
VCE = 28 V; IC(ZS) = 25 mA; PL = 30 W; Th = 25 °C; ZL = 9,5 Ω
Fig.14 Input impedance (series components) as a
function of frequency.
Fig.13 Power gain as a function of frequency.
Ruggedness in s.s.b. operation
Figs 13 and 14 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986
10
The BLW83 is capable of withstanding a load mismatch
(VSWR = 50) under the following conditions:
f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th = 70 °C
and PLnom = 35 W (P.E.P.).
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
August 1986
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11