INTEGRATED CIRCUITS DATA SHEET TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller Product specification File under Integrated Circuits, IC11 2001 Apr 25 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T FEATURES • Integrated high voltage level-shift function • Integrated high voltage bootstrap diode • Transconductance error amplifier for ultra high-ohmic regulation feedback VHS handbook, halfpage • Latched shut-down circuit for overcurrent and overvoltage protection VDD bridge voltage supply (high side) • Low start-up current (green function) • Adjustable minimum and maximum frequencies MOSFET SWITCH • Adjustable dead time • Undervoltage lockout. TEA1610 HALFBRIDGE CIRCUIT GENERAL DESCRIPTION The TEA1610 is a monolithic integrated circuit implemented in a high-voltage DMOS process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier. RESONANT CONVERTER MGU336 signal ground power ground Fig.1 Basic configuration. To guarantee an accurate 50% switching duty factor, the oscillator signal passes through a divide-by-two flip-flop before being fed to the output drivers. APPLICATIONS • TV and monitor power supplies The circuit is very flexible and enables a broad range of applications for different mains voltages. • High voltage power supplies. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT VHS bridge voltage supply (high side) 600 V IGH(source); IGL(source) gate driver source current −225 mA IGH(sink); IGL(sink) gate driver sink current 300 mA fbridge(max) maximum bridge frequency 550 kHz VI(CM) error amplifier common mode input voltage 2.5 V Cf = 100 pF (see Fig.10) ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TEA1610P DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 TEA1610T SO16 plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height SOT109-2 2001 Apr 25 2 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T BLOCK DIAGRAM VDD handbook, full pagewidth 11 8 VDD(F) BOOTSTRAP SUPPLY LEVEL SHIFTER 7 HIGH SIDE DRIVER TEA1610 6 reset 10 LOW SIDE DRIVER 4 start/stop oscillation LOGIC GH SH GL PGND 15 SD shut-down SGND start-up 9 2.33 V ÷2 I+ 2 I− 1 ×2 Icharge gm OSCILLATOR ERROR AMPLIFIER 0.6 V 3V 2.5 V 5 3 n.c. VCO 16 14 12 Idischarge 13 MGU337 VREF IFS IRS Fig.2 Block diagram. 2001 Apr 25 3 CF Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T PINNING SYMBOL PIN DESCRIPTION I− 1 error amplifier inverting input I+ 2 error amplifier non-inverting input VCO 3 error amplifier output PGND 4 power ground n.c. 5 not connected (high voltage spacer) SH 6 high side switch source GH 7 gate of the high side switch VDD(F) 8 floating supply voltage for the high side driver SGND 9 signal ground GL 10 gate of the low side switch VDD 11 supply voltage IFS 12 oscillator discharge current input CF 13 oscillator capacitor IRS 14 oscillator charge current input SD 15 shut-down input VREF 16 reference voltage handbook, halfpage I− 1 16 VREF I+ 2 15 SD VCO 3 14 IRS PGND 4 13 CF TEA1610P n.c. 5 12 IFS SH 6 11 VDD GH 7 10 GL VDD(F) 8 9 SGND MGU338 Fig.3 Pin configuration: TEA1610P. handbook, halfpage I− 1 16 VREF I+ 2 15 SD VCO 3 14 IRS PGND 4 13 CF TEA1610T n.c. 5 12 IFS SH 6 11 VDD GH 7 10 GL VDD(F) 8 9 SGND MGU347 Fig.4 Pin configuration: TEA1610T. 2001 Apr 25 4 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T During start-up, the voltage on the frequency capacitor (Cf) is zero and defines the start-up state. The output voltage of the error amplifier is kept constant (typ. 2.5 V) and switching starts at about 80% of the maximum frequency at the moment pin VDD reaches the start level. FUNCTIONAL DESCRIPTION Start-up When the applied voltage at VDD reaches VDD(initial) (see Fig.5), the low side power switch is turned-on while the high side power switch remains in the non-conducting state. This start-up output state guarantees the initial charging of the bootstrap capacitor (Cboot) used for the floating supply of the high side driver. The start-up state is maintained until VDD reaches the start level (13.5 V), the oscillator is activated and the converter starts operating. handbook, full pagewidth VDD(start) VDD VDD(initial) 0 GH-SH 0 GL 0 t Fig.5 Start-up. 2001 Apr 25 5 MGT998 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T Oscillator The minimum frequency and the dead time are set by the capacitor Cf and resistors Rf(min) and Rdt. The maximum frequency is set by resistor R∆f (see Fig.10). The oscillator frequency is exactly twice the bridge frequency to achieve an accurate 50% duty factor. An overview of the oscillator and driver signals is given in Fig.6. The internal oscillator is a current-controlled oscillator that generates a sawtooth output. The frequency of the sawtooth is determined by the external capacitor Cf and the currents flowing into the IFS and IRS pins. handbook, full pagewidth CF GH-SH 0 GL 0 dead time (high to low) dead time (low to high) t Fig.6 Oscillator and driver signals. 2001 Apr 25 6 MGT999 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T Dead time resistor Rdt (see Fig.10) Rf(min) resistor. As a result, the charge current ICF increases and the oscillation frequency increases. As the falling slope of the oscillator is constant, the relationship between the output frequency and the charge current is not a linear function (see Figs 7 and 9): The dead time resistor Rdt is connected between the 3 V reference pin (VREF) and the IFS current input pin. The voltage on the IFS pin is kept constant at a temperature independant value of 0.6 V. The current that flows into the IFS pin is determined by the value of resistor Rdt and the 2.4 V voltage drop across this resistor. The IFS input current equals the discharge current of capacitor Cf and determines the falling slope of the oscillator. V VCO – 0.6 I IRS2 = ---------------------------R∆f C f × ∆V Cf t IRS2 = -------------------------------- × 2 I IRS1 + I IRS2 The falling slope time is used to create a dead time (tdt) between two successive switching actions of the half-bridge switches: The maximum output voltage of the error amplifier and the value of R∆f determine the maximum frequency: 2.4 V I IFS = -------------R dt V VCO ( max ) – 0.6 I IRS2 ( max ) = ----------------------------------------R ∆f C f × ∆V Cf t dt = -----------------------I IFS C f × ∆V Cf t IRS ( min ) = ------------------------------------------- × 2 I IRS1 + I IRS2(max) t IFS = t dt 1 f max = ---------T osc Minimum frequency resistor (see Fig.10) T osc = t IRS ( min ) + t IFS The Rf(min) resistor is connected between the VREF pin (3 V reference voltage) and the IRS current input (held at a temperature independant voltage level of 0.6 V). The charge current of the capacitor Cf is twice the current flowing into the IRS pin. Bridge frequency accuracy is optimum in the low frequency region. At higher frequencies both the dead time and the oscillator frequency show a decay. The Rf(min) resistor has a voltage drop of 2.4 V and its resistance defines the minimum charge current (rising slope) of the Cf capacitor if the control current is zero. The minimum frequency is defined by this minimum charge current (IIRS1) and the discharge current: The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCf and the charge and discharge currents. However, at higher frequencies the accuracy decreases due to delays in the circuit. 2.4 V I IRS1 = ----------------R f ( min ) C f × ∆V Cf t IRS1 = -----------------------2 × I IRS1 osc f osc(max) f osc(start) 1 f min = -----------------------t dt + t IRS1 f osc(min) Maximum frequency resistor The output voltage is regulated by changing the frequency of the half-bridge converter. The maximum frequency is determined by the R∆f resistor which is connected between the error amplifier output VCO and the oscillator current input pin IRS. The current that flows through the R∆f resistor (IIRS2) is added to the current flowing through the 2001 Apr 25 MGW001 handbook, halfpage f 0 I IRS Fig.7 Frequency range. 7 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T Error amplifier Shut-down The error amplifier is a transconductance amplifier. Thus the output current at pin VCO is determined by the amplifier transconductance and the differential voltage on input pins I+ and I−. The output current IVCO is fed to the IRS input of the current-controlled oscillator. The shut-down input (SD) has an accurate threshold level of 2.33 V. When the voltage on input SD reaches 2.33 V, both power switches immediately switch off and the TEA1610 enters shut-down mode. During shut-down mode, pin VDD is clamped by an internal Zener diode at 12.0 V with 1 mA input current. This clamp prevents VDD rising above the rating of 14 V due to low supply current to the TEA1610 in shut-down mode. The source capability of the error amplifier increases current in the IRS pin when the differential input voltage is positive. Therefore the minimum current is determined by resistor Rf(min) and the minimum frequency setting is independent of the characteristics of the error amplifier. When the TEA1610 is in the shut-down mode, it can be activated again only by lowering VDD below the VDD reset level (5.3 V typical). The shut-down latch is then reset and a new start-up cycle can commence (see Fig.8). The error amplifier has a maximum output current of 0.5 mA for an output voltage up to 2.5 V. If the source current decreases, the oscillator frequency also decreases resulting in a higher regulated output voltage. During start-up, the output voltage of the amplifier is held at a constant value of 2.5 V. This voltage level defines, together with resistor R∆f, the initial switching frequency of the TEA1610 after start-up. handbook, full pagewidth oscillation shutdown supply off start-up oscillation VDD(start) VDD(sdc) VDD VDD(reset) VSD(th) SD GH-SH 0 GL 0 t Fig.8 Shut-down. 2001 Apr 25 8 MGW002 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referred to the ground pins which must be interconnected externally; positive currents flow into the IC. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Voltages VSH high side driver voltage 0 600 V VDD supply voltage 0 14 V VI+ amplifier non-inverting input voltage 0 5 V VI− amplifier inverting input voltage 0 5 V VSD shut-down input voltage 0 5 V IIFS oscillator falling slope input current − 1 mA IIRS oscillator rising slope input current − 1 mA IREF VREF source current − −2 mA Currents Power and temperature Ptot total power dissipation Tamb < 70 °C − 0.8 W Tamb ambient temperature operating −25 +70 °C Tstg storage temperature −25 +150 °C note 1 − 2000 V note 2 − 200 V Handling VES electrostatic handling voltage Notes 1. Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. 2. Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and 10 Ω resistor. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-a) thermal resistance from junction to ambient Rth(j-pin) thermal resistance from junction to pin QUALITY SPECIFICATION In accordance with “SNW-FQ-611-E”. 2001 Apr 25 9 in free air VALUE UNIT 100 K/W 50 K/W Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T CHARACTERISTICS All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V and Tamb = 25 °C; tested in the circuit of Fig.10; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT High voltage pins VDD(F), GH and SH IL leakage current VDD(F), VGH and VSH = 600 V − − 30 µA low side on; high side off − 4 5 V Supply pin VDD VDD(initial) supply voltage for defined driver output VDD(start) start oscillator voltage 12.9 13.4 13.9 V VDD(stop) stop oscillator voltage 9.0 9.4 9.8 V VDD(hys) start-stop hysteresis voltage VDD(sdc) shut-down clamp voltage VDD(reset) reset voltage IDD supply current: low side off; high side off; IDD = 1 mA 3.8 4.0 4.2 V 11.0 12.0 13.0 V 4.5 5.3 6.0 V start-up low side on; high side off 130 180 220 µA operating Cf = 100 pF; IIFS = 0.5 mA; IIRS = 50 µA; Co = 200 pF; note 1 − 2.4 − mA shut-down low side off; high side off; VDD = 9 V − 130 180 µA 3.1 V Reference voltage pin VREF VREF reference voltage IREF = 0 mA 2.9 3.0 IREF current capability source only −1.0 − − mA Zo(VREF) output impedance IREF = −1 mA − 5.0 − Ω temperature coefficient IREF = 0; Tj = 25 to 150 °C − −0.3 − mV/K ∆V REF -----------------∆T Current controlled oscillator pins IRS, IFS, CF ICF(ch)(min) minimum CF charge current IIRS = 15 µA; VCF = 2 V 28 30 32 µA ICF(ch)(max) maximum CF charge current IIRS = 200 µA; VCF = 2 V 340 380 420 µA VIRS pin IRS voltage IIRS = 200 µA 570 600 630 mV ICF(dis)(min) minimum CF discharge current IIRS = 50 µA; VCF = 2 V 47 50 53 µA ICF(dis)(max) maximum CF discharge current IIFS = 1 mA; VCF = 2 V 0.93 0.98 1.03 mA VIFS pin IFS voltage IIFS = 1 mA 570 600 630 mV fbridge(min) minimum bridge frequency (for stable operation) CF = 100 pF; IIFS = 0.5 mA; 188 200 212 kHz maximum bridge frequency Cf = 100 pF; IIFS = 1 mA; 450 500 550 kHz fbridge(max) IIRS = 50 µA; f bridge f osc = -------2 f osc IIRS = 200 µA; f bridge = -------; 2 note 2 2001 Apr 25 10 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller SYMBOL TEA1610P; TEA1610T PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCF(L) CF trip level LOW DC level − 1.27 − V VCF(H) CF trip level HIGH DC level − 3.0 − V VCf(p-p) Cf voltage (peak-to-peak value) 1.63 1.73 1.83 V tdt dead time Cf = 100 pF; IIFS = 0.5 mA; IIRS = 50 µA 0.37 0.40 0.43 µs Output drivers IGH(source) high side output source current VDD(F) = 13 V; VSH = 0; VGH = 0 −135 −180 −225 mA IGH(sink) high side output sink current VDD(F) = 13 V; VSH = 0; VGH = 13 V − 300 − mA IGL(source) low side output source current VGL = 0 −135 −180 −225 mA IGL(sink) low side output sink current VGL = 14 V − 300 − mA VGH(H) high side output voltage HIGH VDD(F) = 13 V; VSH = 0; IGH = 10 mA 10.8 12 − V VGH(L) high side output voltage LOW VDD(F) = 13 V; VSH = 0; IGH = 10 mA − 0.2 0.5 V VGL(H) low side output voltage HIGH IGL = 10 mA 10.8 12 − V VGL(L) low side output voltage LOW IGL = 10 mA − 0.2 0.5 V Vd(boot) bootstrap diode voltage drop I = 5 mA 1.5 1.8 2.1 V VSD = 2.33 V 0 0.2 0.5 µA 2.26 2.33 2.40 V − −0.1 −0.5 µA − − 2.5 V Shut-down input pin SD ISD input current VSD(th) threshold level Error amplifier pins I+, I−, VCO II(CM) common mode input current VI(CM) common mode input voltage VI(offset) input offset voltage VI(CM) = 1 V; IVCO = −10 mA −2 0 +2 mV − VI(CM) = 1 V gm transconductance VI(CM) = 1 V; source only 330 − µA/mV Ao open loop gain RL = 10 kΩ to GND; VI(CM) = 1 V − 70 − dB GB gain bandwidth product RL = 10 kΩ to GND; VI(CM) = 1 V − 5 − MHz VVCO(max) maximum output voltage operating; RL = 10 kΩ to GND 3.2 3.6 4.0 V IVCO(max) maximum output current operating; VVCO = 1 V −0.4 −0.5 −0.6 mA VVCO(start) output voltage during start-up IVCO = 0.3 mA 2.30 2.50 2.70 V Notes 1. Supply current IDD will increase with increasing bridge frequency to drive the capacitive load of two MOSFETs. Typical MOSFETs for the TEA1610 application are 8N50 (Philips type PHX80N50E, Qg(tot) = 55 nC typ.) and these will increase the supply current at 150 kHz according to the following formula: ∆IDD = 2 × Qg(tot) × fbridge = 2 × 55 nC × 150 kHz = 16.5 mA. 2. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF and the charge/discharge currents ICF(ch) and ICF(dis). 2001 Apr 25 11 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T Practical values of the application example are given in Fig.9 in which the measured oscillator frequency with capacitor Cf = 220 pF is shown as a function of the charge current IIRS. Note that the slope of the measured frequency differs from the theoretical frequency (frequency set) calculated as described in Section “Maximum frequency resistor”. APPLICATION INFORMATION An application example of a zero-voltage-switching resonant converter application using TEA1610 is shown in Fig.10. In the off-mode the VDD voltage is pulled below the stop level of 9.4 V by the 7.5 V Zener diode and the half-bridge is not driven. In the on-mode the TEA1610 starts-up with a high-ohmic bleeder resistor. After passing the level for start of oscillation, the TEA1610 is in normal operating mode and consumes the normal supply current delivered by the 12 V supply. The dead time is set by Rdt and Cf. The minimum frequency is adjusted by Rf(min) and the frequency range is set by R∆f. The output voltage is adjusted with a potentiometer connected to the inverting input of the error amplifier and is regulated via a feedback circuit. The shut-down input is used for overvoltage protection. To prevent interference, filter capacitors can be added on pins IFS, IRS and VREF. The maximum value of each filter capacitor is 100 pF. The measured dead time is directly related to charge current (total current flowing into pin IRS) and therefore to oscillator frequency. The measured frequency graph can be used to determine the required R∆f resistor for a certain maximum frequency in an application with the same value of capacitor Cf. More application information can be found in application note “AN99011”. MGW003 800 handbook, full pagewidth dead time (low to high) f osc (kHz) 1200 t dt (ns) dead time (high to low) 600 900 400 600 frequency set frequency measured 200 300 0 0 20 40 60 80 100 120 140 160 180 I IRS (µA) fosc at IIFS = 500 µA. fosc = 2 × fbridge. Fig.9 Oscillator frequency and measured dead time as functions of charge current IIRS. 2001 Apr 25 12 0 200 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... RVDD output voltage CVDD 7.5 V VDD 11 on/off 8 VDD(F) bootstrap diode LEVEL SHIFTER HIGH SIDE DRIVER 7 GH Lp TEA1610 6 SH 13 LOW SIDE DRIVER 10 GL Cp 15 SD signal ground regulator feedback power ground SGND 9 overvoltage protection 2.33 V ÷2 I+ 2 SGND gm OSCILLATOR 3V ERROR AMPLIFIER 0.6 V 3 14 16 12 13 VCO IRS VREF IFS CF R f(min) R dt Cf Fig.10 Application diagram. Product specification R∆f CSS MGU339 TEA1610P; TEA1610T I− 1 Cr 4 PGND LOGIC SUPPLY Cboot L r(ext) Philips Semiconductors 12 V Zero-voltage-switching resonant converter controller handbook, full pagewidth 2001 Apr 25 bridge voltage supply (high side) Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T PACKAGE OUTLINES DIP16: plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 9 16 pin 1 index E 1 8 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.7 0.51 3.7 1.40 1.14 0.53 0.38 0.32 0.23 21.8 21.4 6.48 6.20 2.54 7.62 3.9 3.4 8.25 7.80 9.5 8.3 0.254 2.2 inches 0.19 0.020 0.15 0.055 0.045 0.021 0.015 0.013 0.009 0.86 0.84 0.26 0.24 0.10 0.30 0.15 0.13 0.32 0.31 0.37 0.33 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC EIAJ SOT38-1 050G09 MO-001 SC-503-16 2001 Apr 25 14 EUROPEAN PROJECTION ISSUE DATE 95-01-19 99-12-27 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height D E SOT109-2 A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.65 0.20 0.05 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.008 0.057 0.002 0.049 0.01 0.019 0.0100 0.39 0.014 0.0075 0.38 0.16 0.15 0.050 0.244 0.228 0.041 0.039 0.016 0.028 0.024 0.01 0.01 0.004 0.028 0.012 inches 0.065 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-2 076E07 MS-012 2001 Apr 25 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-22 99-12-27 15 o 8 0o Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 220 °C for thick/large packages, and below 235 °C for small/thin packages. SOLDERING Introduction This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). WAVE SOLDERING There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: Through-hole mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. SOLDERING BY DIPPING OR BY SOLDER WAVE The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. MANUAL SOLDERING Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Surface mount packages Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REFLOW SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. MANUAL SOLDERING Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. 2001 Apr 25 16 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T Suitability of IC packages for wave, reflow and dipping soldering methods SOLDERING METHOD MOUNTING PACKAGE WAVE suitable(2) Through-hole mount DBS, DIP, HDIP, SDIP, SIL Surface mount REFLOW(1) DIPPING − suitable BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable − HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not suitable(3) suitable − PLCC(4), SO, SOJ suitable suitable − suitable − suitable − recommended(4)(5) LQFP, QFP, TQFP not SSOP, TSSOP, VSO not recommended(6) Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2001 Apr 25 17 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Apr 25 18 Philips Semiconductors Product specification Zero-voltage-switching resonant converter controller TEA1610P; TEA1610T NOTES 2001 Apr 25 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613502/01/pp20 Date of release: 2001 Apr 25 Document order number: 9397 750 07993