DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs FEATURES • High-speed switching • Interchangeability of drain and source connections handbook, halfpage • Low RDSon at zero gate voltage ( < 30 Ω for PMBFJ111). 3 g DESCRIPTION 1 Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. Top view d s 2 MAM385 Fig.1 Simplified outline and symbol. PINNING - SOT23 PIN DESCRIPTION 1 drain 2 source 3 gate LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±40 V VGSO gate-source voltage − −40 V Note VGDO drain-drain voltage − −40 V 1. Drain and source are interchangeable. IG forward gate current (DC) − 50 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C April 1995 2 Tamb = 25 °C; note 1 Philips Semiconductors Product specification PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs THERMAL CHARACTERISTICS Tj =P(Rth j-t + Rth t−s + Rth s-a) + Tamb SYMBOL PARAMETER MAX. UNIT Rth j-a from junction to ambient (note 1) 430 K/W Rth j-a from junction to ambient (note 2) 500 K/W Notes 1. Mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. 2. Mounted on printed circuit board. STATIC CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS −IGSS reverse gate current −VGS = 15 V; VDS = 0 IDSS drain current VGS = 0; VDS = 15 V UNIT 1 nA PMBFJ111 20 − mA PMBFJ112 5 PMBFJ113 2 gate-source breakdown voltage −IG = 1 µA; VDS = 0 −VGS(off) gate-source cut-off voltage ID = 1 µA; VDS = 5 V April 1995 MAX. − −V(BR)GSS RDS(on) MIN. − − 40 − V PMBFJ111 3 10 V PMBFJ112 1 5 PMBFJ113 0.5 3 drain-source on-resistance VGS = 0 V; VDS = 0.1 V PMBFJ111 − 30 Ω PMBFJ112 − 50 PMBFJ113 − 100 3 Philips Semiconductors Product specification PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs DYNAMIC CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS input capacitance Ciss Crss feedback capacitance TYP. MAX. UNIT VDS = 0 −VGS = 10 V f = 1 MHz 6 − pF VDS = 0 −VGS = 0 f = 1 MHz Tamb = 25 °C 22 28 pF VDS = 0 −VGS = 10 V f = 1 MHz 3 − pF Switching times (see Fig.2) tr rise time note 1 6 − ns ton turn-on time note 1 13 − ns tf fall time note 1 15 − ns toff turn-off time note 1 35 − ns Notes 1. Test conditions for switching times are as follows: VDD = 10 V, VGS = 0 to −VGS(off) (all types); −VGS(off) = 12 V, RL = 750 Ω (PMBFJ111); −VGS(off) = 7 V, RL = 1550 Ω (PMBFJ112); −VGS(off) = 5 V, RL = 3150 Ω (PMBFJ113). VGS = 0 V 1 µF 50 Ω ok, halfpage VDD 10 nF Vi 10 µF −VGS off RL DUT 10% 90% toff SAMPLING SCOPE 50 Ω ts ton tf td tr 90% 50 Ω Vo MBK289 10% MBK294 Fig.2 Switching circuit. April 1995 Fig.3 Input and output waveforms. 4 Philips Semiconductors Product specification PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 April 1995 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6