BGA2717 MMIC wideband amplifier Rev. 02 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features ■ ■ ■ ■ ■ ■ ■ ■ Internally matched to 50 Ω Wide frequency range (3.2 GHz at 3 dB bandwidth) Flat 24 dB gain (±1 dB up to 2.8 GHz) −2.5 dBm output power at 1 dB compression point Good linearity for low current (IP3out = 10 dBm) Low second harmonic; −38 dBc at PD = −40 dBm Low noise figure; 2.3 dB at 1 GHz Unconditionally stable (K ≥ 2). 1.3 Applications ■ ■ ■ ■ LNB IF amplifiers Cable systems ISM General purpose. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter VS IS s21 2 Conditions Min Typ Max Unit DC supply voltage - 5 6 V supply current - 8 - mA insertion power gain f = 1 GHz - 24 - dB NF noise figure f = 1 GHz - 2.3 - dB PL(sat) saturated load power f = 1 GHz - 1 - dBm BGA2717 Philips Semiconductors MMIC wideband amplifier 2. Pinning information Table 2: Pinning Pin Description 1 VS 2, 5 GND2 3 RF_OUT 4 GND1 6 RF_IN Simplified outline 6 5 Symbol 1 4 6 3 4 2, 5 sym052 1 2 3 SOT363 3. Ordering information Table 3: Ordering information Type number BGA2717 Package Name Description Version - plastic surface mounted package; 6 leads SOT363 4. Marking Table 4: Marking Type number Marking code BGA2717 1B- 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VS DC supply voltage RF input AC coupled - 6 V IS supply current - 15 mA Ptot total power dissipation - 200 mW Tsp ≤ 90 °C Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C PD maximum drive power - −10 dBm 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 2 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point Ptot = 200 mW; Tsp ≤ 90 °C 300 K/W 7. Characteristics Table 7: Characteristics VS = 5 V; IS = 8 mA; Tj = 25 °C; measured on demo board; unless otherwise specified. Symbol Parameter IS s21 2 s112 s22 2 s122 Conditions Min Typ Max Unit supply current 6 8 10 mA insertion power f = 100 MHz gain f = 1 GHz 18 18.6 20 dB 23 23.9 25 dB f = 1.8 GHz 24 25 27 dB f = 2.2 GHz 24 25.1 27 dB f = 2.6 GHz 22 24 26 dB f = 3 GHz 20 22.1 24 dB input return losses f = 1 GHz 15 19 - dB f = 2.2 GHz 8 9.4 - dB output return losses f = 1 GHz 8 10 - dB f = 2.2 GHz 5 6.8 - dB isolation f = 1.6 GHz 54 55 - dB f = 2.2 GHz 38 39 - dB f = 1 GHz - 2.3 2.5 dB NF noise figure f = 2.2 GHz - 2.9 3.1 dB B bandwidth at s212 −3 dB below flat gain at 1 GHz 3 3.2 - GHz K stability factor f = 1 GHz - 13 - f = 2.2 GHz - 1.7 - PL(sat) saturated load power f = 1 GHz 0 1.4 - dBm f = 2.2 GHz −1 +0.1 - dBm load power at 1 dB gain compression; f = 1 GHz −4 −2.6 - dBm at 1 dB gain compression; f = 2.2 GHz −5 −3.1 - dBm PL(1dB) IM2 second order at PD = −40 dBm; intermodulation f0 = 1 GHz product 36 38 - dBc IP3in input, third order intercept point f = 1 GHz −15 −13.9 - dBm f = 2.2 GHz −20 −18.8 - dBm output, third order intercept point f = 1 GHz 9 10 - dBm f = 2.2 GHz 4 6.3 - dBm IP3out 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 3 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 8. Application information Figure 1 shows a typical application circuit for the BGA2717 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. The 22 nF supply decoupling capacitor C1 should be located as close as possible to the MMIC. The printed-circuit board (PCB) top ground plane, connected to pins 2, 4 and 5 must be as close as possible to the MMIC, and ideally directly beneath it. When using via holes, use multiple via holes, located as close as possible to the MMIC. VS C1 1 VS C2 RF input 6 RF_IN RF_OUT 3 GND1 4 C3 RF output GND2 2, 5 mgu435 Fig 1. Typical application circuit. Figure 2 shows the PCB layout, used for the standard demonstration board. 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 4 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 30 mm PHILIPS PH 30 mm IN OUT V+ PHILIPS PH DUT C3 C2 IN OUT C1 V+ 001aab255 Material = FR4; thickness = 0.6 mm, εr = 4.6. Fig 2. PCB layout and demonstration board showing components. 8.1 Grounding and output impedance If the grounding is not optimal, the gain becomes less flat and the 50 Ω output matching becomes worse. If a better output matching to 50 Ω is required, a 12 Ω resistor (R1) can be placed in series with C3 (see Figure 3). This will significantly improve the output impedance, at the cost of 1 dB gain and 1 dB output power. 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 5 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier VS C1 VS C2 RF input RF_OUT RF_IN GND1 C3 R1 RF output GND2 001aab346 Fig 3. Application circuit for better output impedance into 50 Ω. 8.2 Application examples The MMIC is very suitable as IF amplifier in e.g. LNBs. The excellent wideband characteristics make it an ideal building block (see Figure 4). As second amplifier after an LNA, the MMIC offers an easy matching, low noise solution (see Figure 5). mixer to IF circuit or demodulator from RF circuit wideband amplifier oscillator mgu438 Fig 4. Application as IF amplifier. mixer to IF circuit or demodulator antenna LNA wideband amplifier oscillator mgu439 Fig 5. Application as RF amplifier. 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 6 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 4 GHz 0.2 180° 0 0.2 0.5 100 MHz 2 5 0° 0 −5 −0.2 −135° 10 −2 −0.5 −45° −1 1.0 −90° 001aab265 IS = 8 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω. Fig 6. Input reflection coefficient (s11); typical values. 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 100 MHz +0.2 0.4 +5 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 4 GHz −5 −0.2 −135° −2 −0.5 −45° −1 −90° 1.0 001aab266 IS = 8 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω. Fig 7. Output reflection coefficient (s22); typical values. 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 7 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 001aab267 0 001aab268 30 |s21| 2 (dB) |s12 | 2 (dB) (2) (1) −20 20 (3) −40 10 −60 0 0 1000 2000 3000 0 4000 1000 2000 3000 4000 f (MHz) f (MHz) IS = 8 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω. PD = −35 dBm; Zo = 50 Ω. (1) IS = 8.9 mA; VS = 5.5 V. (2) IS = 8 mA; VS = 5 V. (3) IS = 7.2 mA; VS = 4.5 V. Fig 8. Isolation (s122) as a function of frequency; typical values. 001aab269 10 PL (dBm) Fig 9. Insertion gain (s212) as a function of frequency; typical values. 001aab270 10 PL (dBm) (1) (1) (2) 0 (3) −10 −10 −20 −20 −30 −50 −40 −30 −20 −10 PD (dBm) f = 1 GHz; Zo = 50 Ω. −30 −50 −40 −30 −20 −10 PD (dBm) f = 2.2 GHz; Zo = 50 Ω. (1) VS = 5.5 V. (1) VS = 5.5 V. (2) VS = 5 V. (2) VS = 5 V. (3) VS = 4.5 V. (3) VS = 4.5 V. Fig 10. Load power as a function of drive power at 1 GHz; typical values. Fig 11. Load power as a function of drive power at 2.2 GHz; typical values. 9397 750 13293 Product data sheet (2) 0 (3) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 8 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 001aab271 4 001aab272 25 K NF (dB) 20 3 (3) 15 (2) (1) 2 10 1 5 0 0 0 500 1000 1500 2000 2500 f (MHz) Zo = 50 Ω. 0 1000 2000 3000 4000 f (MHz) IS = 8 mA; VS = 5 V; Zo = 50 Ω. (1) IS = 8.9 mA; VS = 5.5 V. (2) IS = 8 mA; VS = 5 V. (3) IS = 7.2 mA; VS = 4.5 V. Fig 12. Noise figure as a function of frequency; typical values. Fig 13. Stability factor as a function of frequency; typical values. 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 9 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier Table 8: Scattering parameters VS = 5 V; IS = 8 mA; PD = −35 dBm; Zo = 50 Ω; Tamb = 25 °C. f (MHz) s11 s21 s12 s22 Magnitude Angle (ratio) (deg) Magnitude Angle (ratio) (deg) Magnitude Angle (ratio) (deg) Magnitude Angle (ratio) (deg) 100 0.074378 13.78537 8.465495 22.90763 0.003859 −66.39435 0.450496 79.88713 12.2 200 0.076338 13.70153 9.420359 7.358555 0.003112 −122.2687 0.354179 40.70919 14.9 400 0.123748 −1.402521 11.56481 −14.92222 0.002011 −40.5142 0.312568 −0.3804 19.1 600 0.145511 −31.32646 13.31271 −37.77988 0.001659 −156.393 0.3038 −25.36808 20.2 800 0.134956 −67.10955 14.56872 −61.08808 0.00169 −164.4454 0.30873 −46.7704 18.1 1000 0.114063 −111.2495 15.61733 −84.67015 0.002146 −174.8593 0.319208 −68.71787 13.2 1200 0.101959 −168.8557 16.45625 −107.9167 0.002901 139.8136 0.335623 −91.58398 9.2 1400 0.125656 129.9717 17.05668 −131.63 0.004053 123.527 0.353582 −116.5485 6.2 1600 0.16736 85.791 17.49643 −155.2301 0.005545 107.0763 0.366893 −140.7537 4.3 1800 0.234721 51.43065 17.90167 −179.6656 0.007498 105.9423 0.404064 −167.9683 2.9 2000 0.285944 16.46701 17.86635 155.5993 0.009779 90.10168 0.42512 163.3173 2.2 2200 0.339673 −11.74152 17.96498 130.5601 0.011736 75.19814 0.459194 135.039 1.7 2400 0.393746 −47.58817 17.32414 103.3297 0.013927 53.10814 0.459988 103.1106 1.5 2600 0.384353 −81.55786 15.87927 77.84766 0.015937 21.70136 0.428158 75.83004 1.5 2800 0.376183 −112.353 14.44081 52.77053 0.016795 4.656224 0.393701 50.16202 1.7 3000 0.358586 −142.5801 12.67831 30.51455 0.01786 −19.19006 0.3497 26.66791 1.9 3200 0.345562 −171.7261 11.27597 10.04765 0.019217 −32.22469 0.30875 6.504047 2.0 3400 0.33312 160.2254 10.43483 −9.842264 0.020551 −49.16136 0.279672 −12.63121 2.1 3600 0.331268 133.8644 9.743293 −30.36495 0.020908 −59.65434 0.248479 −33.64811 2.2 3800 0.337502 108.48 9.072149 −50.7401 0.022136 −78.78085 0.21362 −56.42401 2.3 4000 0.344645 84.75183 8.513716 −71.86536 0.022792 −94.87525 0.168643 −80.24833 2.4 9397 750 13293 Product data sheet K-factor © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 10 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 9. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig 14. Package outline; SOT363 (SC-88). 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 11 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 10. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BGA2717_2 20040924 Product data sheet - 9397 750 13293 BGA2717_N_1 Modifications: BGA2717_N_1 • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors 20040202 Preliminary data sheet - 9397 750 13293 Product data sheet 9397 750 12828 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 12 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13293 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 24 September 2004 13 of 14 BGA2717 Philips Semiconductors MMIC wideband amplifier 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.2 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Grounding and output impedance . . . . . . . . . . 5 Application examples . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 September 2004 Document number: 9397 750 13293 Published in The Netherlands