PHILIPS PSMN035-150P

PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ Switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
VDS
Conditions
Min
Typ
Max
Unit
-
-
150
V
-
-
50
-
-
-
Tmb = 25 °C; see Figure 3
-
-
-
W
VGS = 10 V; VDS = 120 V;
Tj = 25 °C; see Figure 13
-
33
45
nC
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11 and 12
-
30
35
mΩ
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; see Figure 1 and 2
Ptot
total power
dissipation
Dynamic characteristics
QGD
gate-drain charge
Static characteristics
RDSon
drain-source
on-state resistance
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
PSMN035-150P
Package
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78
PSMN035-150P_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
2 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
150
V
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
VGS
gate-source voltage
ID
drain current
-
150
V
-20
20
V
Tmb = 100 °C; see Figure 1 and 2
-
36
A
Tmb = 25 °C; see Figure 1 and 2
-
50
A
IDM
peak drain current
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 2
-
200
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 3
-
250
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
50
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
200
A
-
460
mJ
-
50
A
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 47 A; Vsup ≤ 50 V;
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 Ω; see Figure 4
energy
IAS
non-repetitive
avalanche current
Vsup ≤ 50 V; VGS = 10 V; Tj(init) = 25 °C;
RGS = 50 Ω; unclamped; see Figure 4
03aa24
120
003aaa016
103
ID
(A)
Ider
(%)
RDSon = VDS/ ID
102
80
tp = 10 μs
100 μs
40
10
P
d=
tp
1 ms
T
D.C.
10 ms
100 ms
t
tp
T
0
1
0
50
100
150
200
1
Tmb (°C)
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
102
VDS (V)
103
Safe operating area; continuous and peak drain
currents as a function of drain-source volt
PSMN035-150P_4
Product data sheet
10
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
3 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
03aa16
120
Pder
(%)
003aaa017
102
25 °C
IAS
(A)
80
10
40
Tj prior to avalanche = 150 °C
0
0
50
100
150
1
10−3
200
Tmb (°C)
Fig 3.
Normalized total power dissipation as a
function of mounting base temperature
Fig 4.
10−1
1
tp (ms)
10
Non-repetitive avalanche ruggedness current
as a function of pulse duration
PSMN035-150P_4
Product data sheet
10−2
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
4 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
see Figure 5
-
0.6
-
K/W
Rth(j-a)
thermal resistance from junction to ambient vertical in still air
-
-
60
K/W
003aaa018
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
10−2
δ=
P
Single Pulse
t
tp
10−3
10−6
tp
T
T
10−5
10−4
10−3
10−2
10−1
1
tp (s)
Fig 5.
Transient thermal impedance from junction to solder point as a function of pulse duration
PSMN035-150P_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
5 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
150
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
1
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
2
3
4
V
VDS = 150 V; VGS = 0 V; Tj = 25 °C
-
0.05
10
µA
VDS = 150 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11 and 12
-
-
98
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
-
30
35
mΩ
ID = 50 A; VDS = 120 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
-
79
-
nC
-
17
-
nC
-
33
45
nC
-
4720
-
pF
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
Coss
output capacitance
Crss
reverse transfer
capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
VDS = 75 V; RL = 1.5 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
-
456
-
pF
-
208
-
pF
-
25
-
ns
-
138
-
ns
-
79
-
ns
-
93
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
-
0.85
1.2
V
trr
reverse recovery time
-
118
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V; Tj = 25 °C
-
0.66
-
nC
PSMN035-150P_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
6 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
003aaa019
50
VGS = 10 V
ID
(A)
8V
6V
003aaa020
50
VDS > ID × RDSon
ID
(A)
40
40
30
175 °C
30
5.4 V
20
5.2 V
10
4.8 V
20
Tj = 25 °C
5V
10
4.6 V
4.4 V
0
0
Fig 6.
0.4
0.8
1.2
Output characteristics: drain current as a
function of drain-source voltage; typical values
0
Fig 7.
2
4
6
8
10
VGS (V)
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaa025
003aaa024
10−2
ID
(A)
0
1.6
2
VDS (V)
50
gfs
(S)
10−3
10−4
typ
30
max
Tj = 175 °C
10−5
20
10−6
10−7
10
1
2
3
0
5
4
0
VGS (V)
Fig 8.
Tj = 25 °C
40
min
20
30
40
50
ID (A)
Sub-threshold drain current as a function of
gate-source voltage
Fig 9.
Forward transconductance as a function of
drain current; typical values
PSMN035-150P_4
Product data sheet
10
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
7 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
003aaa023
4.5
4
VGS(th)
(V)
3.5
max
0.14
RDSon
(Ω)
4.4 V
0.12
4.6 V
003aaa021
4.8 V
5.0 V
0.10
5.2 V
3
5.4 V
typ
0.08
2.5
2
0.06
min
1.5
0.04
6.0 V
1
0.02
0.5
0
−60
−20
20
60
100
140
Tj (°C)
a
0
180
0
5
10
15
25
20
30
ID (A)
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
003aaa022
3.0
VGS = 8 V
003aaa028
10
2.8
VGS
2.6
(V)
ID = 50 A
Tj = 25 °C
VDD = 30 V
8
2.4
2.2
2.0
VDD = 120 V
6
1.8
1.6
4
1.4
1.2
1.0
2
0.8
0.6
−40
0
40
80
160
120
Tj (°C)
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
0
0
40
60
QG (nC)
80
Fig 13. Gate-source voltage as a function of gate
charge; typical values
PSMN035-150P_4
Product data sheet
20
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
8 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
003aaa026
104
Ciss,
Coss,
Crss
IS
Ciss
003aaa027
50
45
(A) 40
(pF)
35
Tj = 175 °C
30
103
25
Coss
Tj = 25 °C
20
15
10
Crss
5
102
10−1
0
1
10
VDS (V)
102
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
0.4
0.6
0.8
1.0
1.2
VSD (V)
Fig 15. Source current as a function of source-drain
voltage; typical values
PSMN035-150P_4
Product data sheet
0.2
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
9 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig 16. Package outline SOT78 (TO-220AB)
PSMN035-150P_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
10 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
PSMN035-150P_4
20091116
Product data sheet
-
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Type number PSMN035-150P separated from data sheet
PSMN035-150_SERIES_HG_3.
PSMN035-150_SERIES_HG_3 20000328
Product specification
-
PSMN035-150_SERIES_2
-
PSMN035-150_SERIES_1
PSMN035-150_SERIES_2
19990801
Product specification
PSMN035-150_SERIES_1
19990201
Objective specification -
PSMN035-150P_4
Product data sheet
PSMN035-150_SERIES_HG_3
-
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
11 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
9. Legal information
9.1
Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PSMN035-150P_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 16 November 2009
12 of 13
PSMN035-150P
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 November 2009
Document identifier: PSMN035-150P_4