PHILIPS BYR29X-600

BYR29X-600
Rectifier diode ultrafast
Rev. 01 — 26 September 2003
Product data
M3D295
1. Product profile
1.1 Description
Ultra-fast, epitaxial rectifier diode in a plastic package.
1.2 Features
■ Low forward voltage
■ Soft recovery characteristic
■ Fast switching
■ Isolated mounting base.
1.3 Applications
■ Switched-mode power supplies
■ Low loss rectification.
1.4 Quick reference data
■ VR ≤ 600 V
■ IF(AV) ≤ 8 A
■ VF ≤ 1.5 V
■ trr ≤ 75 ns
2. Pinning information
Table 1:
Pinning - SOD113, simplified outline and symbol
Pin
Description
1
cathode (k)
2
anode (a)
mb
mounting base;
isolated
Simplified outline
Symbol
k
mb
a
001aaa020
1
2
Top view
SOD113
MBK088
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
3. Ordering information
Table 2:
Ordering information
Type number
BYR29X-600
Package
Name
Description
Version
-
Plastic single-ended package; isolated heatsink mounted; 2-leads
SOD113
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse voltage
-
600
V
VRWM
crest working reverse voltage
-
600
V
VR
reverse voltage
Th ≤ 136 °C
-
600
V
IF(AV)
average forward current
square wave; δ = 0.5; Th ≤ 73 °C
-
8
A
IFRM
repetitive peak forward current
square wave; t = 25 µs; δ = 0.5; Th ≤ 73 °C
-
16
A
IFSM
non-repetitive peak forward current
sinusoidal; with reapplied VRRM(max)
tp = 10 ms
-
60
A
tp = 8.3 ms
-
66
A
[1]
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
+150
°C
[1]
Neglecting switching and reverse current losses.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12006
Product data
Rev. 01 — 26 September 2003
2 of 10
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
003aaa467
20
δ=1
Vo = 1.26 V
PF
(W)
Rs = 0.03 Ω
Th(max)
δ = 0.2
Th(max)
a = 1.9
10
10
a = 1.57
(W)
67.5
δ = 0.5
Rs = 0.03 Ω
Vo = 1.26 V
PF
(°C)
15
67.5
15
40
(°C)
95
a = 2.8
a=4
95
δ = 0.1
δ=
P
tp
122.5
5
T
122.5
5
t
tp
T
0
4
8
IF(AV) (A)
150
0
150
0
0
12
Square current waveform
2
4
6
IF(AV) (A)
8
Sinusoidal current waveform
I F ( RMS )
a = -----------------I F ( AV )
I F ( AV ) = I F ( RMS ) × δ
Fig 1. Maximum forward power dissipation (square
current waveform) and maximum permissible
heatsink temperature as a function of average
forward current.
Fig 2. Maximum forward power dissipation
(sinusoidal current waveform) and maximum
permissible heatsink temperature as a function
of average forward current.
003aaa469
12
IF(RMS)
(A)
10
8
6
4
10-5
10-4
10-3
10-2
10-1
tp (s)
Fig 3. Maximum permissible forward RMS current as a function of pulse width.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12006
Product data
Rev. 01 — 26 September 2003
3 of 10
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
thermal resistance from junction to heatsink
Rth(j-h)
thermal resistance from junction to ambient
Rth(j-a)
Conditions
Min Typ Max Unit
with heatsink compound; Figure 4
-
-
5.5
K/W
without heatsink compound
-
-
7.2
K/W
in free air
-
55
-
K/W
5.1 Transient thermal impedance
003aaa474
10
Zth(j-h)
(K/W)
1
10-1
P
t
tp
10-2
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12006
Product data
Rev. 01 — 26 September 2003
4 of 10
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
forward voltage
VF
IF = 8 A
Tj = 150 °C; Figure 5
-
1.07
1.5
V
Tj = 25 °C; Figure 5
-
-
1.7
V
-
1.75
1.95
V
IF = 20 A
IR
reverse current
VR = VRRM
Tj = 100 °C
-
0.1
0.2
mA
Tj = 25 °C
-
1
10
µA
Dynamic characteristics
Qr
recovered charge
IF = 2 A; VR ≥ 30 V; dIF/dt = 20 A/µs; Figure 8
-
150
200
nC
IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs; Figure 6
trr
reverse recovery time
-
60
75
ns
Irrm
peak reverse recovery current IF = 10 A; VR ≥ 30 V; dIF/dt = 50 A/µs;
Tj = 100 °C; Figure 7
-
-
6
A
Vfr
forward recovery voltage
-
5
-
V
IF = 10 A; dIF/dt = 10 A/µs
003aaa472
30
IF
Tj = 150 °C
(A)
003aaa470
103
Tj = 25 °C
IF = 10 A
trr
(ns)
20
typ
1A
102
max
10
Tj = 25 °C
Tj = 100 °C
0
10
0
1
2
VF (V)
3
Fig 5. Forward current as a function of forward
voltage; typical values.
1
dIF/dt (A/ms)
102
Fig 6. Maximum reverse recovery time as a function
of rate of change of forward current.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12006
Product data
10
Rev. 01 — 26 September 2003
5 of 10
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
003aaa471
10
IF = 10 A
Irrm
003aaa473
103
Qr
(nC)
(A)
IF = 10 A
1
2A
IF =1 A
102
10-1
Tj = 25 °C
Tj = 100 °C
10-2
1
10
10
-dIF/dt (A/µs)
102
Fig 7. Maximum reverse current as a function of rate
of change of forward current.
10-1
10
-dIF/dt (A/µs)
102
Fig 8. Maximum recovered charge as a function of
rate of change of forward current.
7. Isolation characteristics
Table 6:
Isolation characteristics
Symbol Parameter
V(isol)MR
Repetitive peak isolation voltage from both
terminals to external heatsink.
C(k-h)
Capacitance from cathode to external heatsink.
Conditions
Min.
Typ.
Max. Unit
RH ≤ 65%;
clean and dust-free.
-
-
1500 V
-
12
-
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12006
Product data
pF
Rev. 01 — 26 September 2003
6 of 10
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 'full pack'
SOD113
A
A1
E
P
z
q
m
T
D
HE
j
(1)
L1
k
Q
L
1
2
c
w M
b
b1
e
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
E
e
HE
max.
j
k
L
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
0.7
0.4
15.8
15.2
10.3
9.7
5.08
19.0
2.7
1.7
0.6
0.4
14.4
13.5
L1
(1)
3.3
2.8
m
P
Q
q
T
w
z(2)
6.5
6.3
3.2
3.0
2.6
2.3
2.6
2.55
0.4
0.8
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
OUTLINE
VERSION
SOD113
REFERENCES
IEC
JEDEC
JEITA
2-lead TO-220F
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
02-04-09
Fig 9. SOD113.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12006
Product data
Rev. 01 — 26 September 2003
7 of 10
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
9. Revision history
Table 7:
Revision history
Rev Date
01
20030926
CPCN
Description
-
Product data (9397 750 12006).
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12006
Product data
Rev. 01 — 26 September 2003
8 of 10
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
10. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 12006
Rev. 01 — 26 September 2003
9 of 10
BYR29X-600
Philips Semiconductors
Rectifier diode ultrafast
Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
5.1
6
7
8
9
10
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data. . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Transient thermal impedance . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Isolation characteristics . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
1
2
2
4
4
5
6
7
8
9
9
9
© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 26 September 2003
Document order number: 9397 750 12006