PHILIPS PDTC114ES

DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC114E series
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
Product specification
Supersedes data of 2003 Apr 10
2004 Aug 05
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
FEATURES
QUICK REFERENCE DATA
• Built-in bias resistors
SYMBOL
• Simplified circuit design
VCEO
collector-emitter
voltage
IO
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
PARAMETER
TYP.
MAX.
UNIT
−
50
V
output current (DC)
−
100
mA
R1
bias resistor
10
−
kΩ
R2
bias resistor
10
−
kΩ
• General purpose switching and amplification
• Inverter and interface circuits
DESCRIPTION
• Circuit driver.
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
MARKING CODE
PNP COMPLEMENT
PHILIPS
EIAJ
PDTC114EE
SOT416
SC-75
09
PDTA114EE
PDTC114EEF
SOT490
SC-89
09
PDTA114EEF
PDTC114EK
SOT346
SC-59
04
PDTA114EK
PDTC114EM
SOT883
SC-101
DS
PDTA114EM
PDTC114ES
SOT54 (TO-92)
SC-43
TC114E
PDTA114ES
PDTC114ET
SOT23
−
*16(1)
PDTA114ET
PDTC114EU
SOT323
SC-70
*09(1)
PDTA114EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 05
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
PDTC114ES
handbook, halfpage
2
R1
1
DESCRIPTION
1
base
2
collector
3
emitter
1
base
2
emitter
3
collector
1
base
2
emitter
3
collector
1
2
R2
3
3
MAM364
PDTC114EE
PDTC114EEF
PDTC114EK
handbook, halfpage
3
3
R1
PDTC114ET
1
PDTC114EU
R2
2
2
1
Top view
MDB269
PDTC114EM
handbook, halfpage
3
R1
2
1
3
R2
1
2
bottom view
MHC506
2004 Aug 05
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
VI
input voltage
positive
−
+40
V
negative
−
−10
V
IO
output current (DC)
−
100
mA
ICM
peak collector current
−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT54
note 1
−
500
mW
SOT23
note 1
−
250
mW
SOT346
note 1
−
250
mW
SOT323
note 1
−
200
mW
SOT416
note 1
−
150
mW
SOT490
notes 1 and 2
−
250
mW
SOT883
notes 2 and 3
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
UNIT
in free air
SOT54
note 1
250
K/W
SOT23
note 1
500
K/W
SOT346
note 1
500
K/W
SOT323
note 1
625
K/W
SOT416
note 1
833
K/W
SOT490
notes 1 and 2
500
K/W
SOT883
notes 2 and 3
500
K/W
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
2004 Aug 05
VALUE
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 50 V; IE = 0
−
−
100
nA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB = 0
−
−
1
µA
VCE = 30 V; IB = 0; Tj = 150 °C
−
−
50
µA
µA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
400
hFE
DC current gain
VCE = 5 V; IC = 5 mA
30
−
−
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
−
−
150
mV
Vi(off)
input-off voltage
IC = 100 µA; VCE = 5 V
−
1.1
0.8
V
Vi(on)
input-on voltage
IC = 10 mA; VCE = 0.3 V
2.5
1.8
−
V
R1
input resistor
7
10
13
kΩ
R2
-------R1
resistor ratio
0.8
1
1.2
Cc
collector capacitance
−
−
2.5
2004 Aug 05
IE = ie = 0; VCB = 10 V; f = 1 MHz
5
pF
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2004 Aug 05
REFERENCES
IEC
JEDEC
EIAJ
SC-75
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
Plastic surface mounted package; 3 leads
SOT490
D
E
B
A
X
HE
v M A
3
A
1
c
2
e1
bp
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
v
w
mm
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.0
0.5
1.7
1.5
0.5
0.3
0.1
0.1
OUTLINE
VERSION
SOT490
2004 Aug 05
REFERENCES
IEC
JEDEC
EIAJ
SC-89
7
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
Plastic surface mounted package; 3 leads
SOT346
E
D
A
B
X
HE
v M A
3
Q
A
A1
1
c
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
1.9
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
OUTLINE
VERSION
SOT346
2004 Aug 05
REFERENCES
IEC
JEDEC
EIAJ
TO-236
SC-59
8
EUROPEAN
PROJECTION
ISSUE DATE
98-07-17
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2004 Aug 05
REFERENCES
IEC
JEDEC
JEITA
SC-101
9
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Aug 05
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-06-28
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Aug 05
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
11
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2004 Aug 05
REFERENCES
IEC
JEDEC
EIAJ
SC-70
12
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
PDTC114E series
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Aug 05
13
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/10/pp14
Date of release: 2004
Aug 05
Document order number:
9397 750 13663