Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM Collector-emitter voltage peak value VBE = 0 V VCEO IC ICM Ptot VCEsat ICsat ts Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time PINNING - SOT399 PIN PIN CONFIGURATION DESCRIPTION 1 base 2 collector 3 emitter Ths ≤ 25 ˚C IC = 5.5 A; IB = 1.38 A f = 16 kHz ICsat = 5.5 A; f = 16kHz case isolated TYP. MAX. UNIT - 1700 V 5.5 7.4 825 10 25 45 1.0 8.5 V A A W V A µs SYMBOL c case b Rbe e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM Collector-emitter voltage peak value VBE = 0 V VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature average over any 20 ms period Ths ≤ 25 ˚C MIN. MAX. UNIT - 1700 V -65 - 825 10 25 10 14 150 6 45 150 150 V A A A A mA A W ˚C ˚C MIN. MAX. UNIT - 10 kV ESD LIMITING VALUES SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 kΩ) 1 Turn-off current. September 1997 1 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink without heatsink compound Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air TYP. MAX. UNIT - 3.7 K/W - 2.8 K/W 35 - K/W TYP. MAX. UNIT 2500 V ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. - - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 - - 13.5 65 1.6 19 1.0 1.0 V Ω V V V 4 5.5 7.5 TYP. MAX. UNIT 7.4 0.7 8.5 0.9 µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current BVEBO RBE VCEsat VBEsat VF hFE Emitter-base breakdown voltage Base-emitter resistance Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C IB = 600 mA VEB = 6 V IC = 5.5 A; IB = 1.38 A IC = 5.5 A; IB = 1.38 A IF = 5.5 A IC = 1 A; VCE = 5 V IC = 5.5 A; VCE = 1 V hFE DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ts tf PARAMETER CONDITIONS Switching times (16 kHz line deflection circuit) ICsat = 5.5 A; LC = 750 µH; Cfb = 15.5 nF; VCC = 125 V; IB(end) = 1.2 A; LB = 6 µH; -VBB = 4 V; -IBM = ICM/2 Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU2720DX + 150 v nominal adjust for ICsat DIODE t Lc IBend IB t 20us D.U.T. 26us LB IBend Cfb 64us VCE -VBB Rbe t Fig.1. Switching times waveforms. Fig.3. Switching times test circuit. ICsat hFE BU2720/22DF 100 90 % VCE = 5 V Ths = 25 C Ths = 85 C IC 10 % tf 10 t ts IB IBend t 1 0.01 - IBM Fig.2. Switching times definitions. September 1997 0.1 1 10 IC / A 100 Fig.4. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain) 3 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor hFE BU2720DX BU2720/22DF PTOT / W 100 BU2720DF 100 VCE = 1 V Ths = 25 C Ths = 85 C IC = 4.5 A f = 16 kHz Ths = 85 C 10 10 1 0.01 0.1 1 10 IC / A 1 100 0 Fig.5. DC current gain. hFE = f (IC) Parameter Ths (Low and high gain) VCEsat / V 0.5 1 1.5 2 IB / A Fig.8. Limit Ptot; Ths = 85˚C Ptot = f (IB(end)); IC = 4.5 A; f = 16 kHz BU2720DF PTOT / W 10 BU2720DF 100 Ths = 85 C Ths = 25 C IC = 5.5 A f = 16 kHz Ths = 85 C 1 IC/IB = 8 10 IC/IB = 4 0.1 0.01 0.1 1 10 IC / A 1 0.5 100 Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB VBEsat / V 1 1.5 2 IB / A 2.5 Fig.9. Limit Ptot; Ths = 85˚C Ptot = f (IB(end)); IC = 5.5 A; f = 16 kHz BU2720DF ts/tf / us 1 BU2720AF 12 Ths = 85 C Ths = 25 C IC = 5.5 A 10 0.9 8 0.8 6 4.5 A IC = 4.5 A 4 IC = 5.5 A 0.7 2 0.6 0 0.5 1 1.5 IB / A 0 0.5 2 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC September 1997 1 1.5 2 IB / A 2.5 Fig.10. Limit storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Ths = 85˚C; f = 16 kHz 4 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor Normalised Power Derating PD% 120 BU2720DX VCC with heatsink compound 110 100 90 80 70 LC 60 50 VCL IBend 40 LB 30 20 CFB T.U.T. -VBB 10 0 0 20 40 60 80 Ths / C 100 120 140 Fig.13. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 1 - 3 µH; CFB = 1 - 4 nF; IB(end) = 1.2 - 4 A Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) 10 1 0.1 Zth / (K/W) IC / A 26 24 22 20 18 16 14 12 10 8 6 4 2 0 100 0.5 0.2 0.1 0.05 0.02 PD 0.01 D=0 0.001 1E-06 tp D= t T 1E-04 1E-02 t/s tp T 1E+00 Area where fails occur 1000 1700 VCE / V Fig.14. Reverse bias safe operating area. Tj ≤ Tjmax Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T September 1997 BU2720AF/DF 5 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 3.0 0.7 4.5 3.3 10.0 27 max 25 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 0.95 max 5.45 5.45 3.3 Fig.15. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720DX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.300