PHILIPS BZX884-B5V1

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D891
BOTTOM VIEW
BZX884 series
Voltage regulator diodes
Product specification
Supersedes data of 2003 May 15
2004 Mar 26
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX884 series
FEATURES
DESCRIPTION
• Two tolerance series: ±2% and ±5%
Low-power voltage regulator diodes encapsulated in
SOD882 leadless ultra small plastic packages.
• Working voltage range: nominal 2.4 V to 75 V
(E24 range)
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm2 (approximately 10% of SOT23)
handbook, halfpage
• Power dissipation comparable to SOT23.
APPLICATIONS
Bottom view
MAM472
• General regulation functions
• ESD ultra high-speed switching
The marking bar indicates the cathode.
• High frequency applications
• Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
Fig.1
Simplified outline (SOD882) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX884-B2V4 to BZX884-B75
BZX884-B2V4
A1
BZX884-B6V2
AB
BZX884-B16
C1
BZX884-B43
CB
BZX884-B2V7
A2
BZX884-B6V8
AC
BZX884-B18
C2
BZX884-B47
CC
BZX884-B3V0
A3
BZX884-B7V5
AD
BZX884-B20
C3
BZX884-B51
CD
BZX884-B3V3
A4
BZX884-B8V2
AE
BZX884-B22
C4
BZX884-B56
CE
BZX884-B3V6
A5
BZX884-B9V1
AF
BZX884-B24
C5
BZX884-B62
CF
BZX884-B3V9
A6
BZX884-B10
AG
BZX884-B27
C6
BZX884-B68
CG
BZX884-B4V3
A7
BZX884-B11
AH
BZX884-B30
C7
BZX884-B75
CH
BZX884-B4V7
A8
BZX884-B12
AJ
BZX884-B33
C8
BZX884-B5V1
A9
BZX884-B13
AK
BZX884-B36
C9
BZX884-B5V6
AA
BZX884-B15
AL
BZX884-B39
CA
Marking codes for BZX884-C2V4 to BZX884-C75
BZX884-C2V4
B1
BZX884-C6V2
BB
BZX884-C16
D1
BZX884-C43
DB
BZX884-C2V7
B2
BZX884-C6V8
BC
BZX884-C18
D2
BZX884-C47
DC
BZX884-C3V0
B3
BZX884-C7V5
BD
BZX884-C20
D3
BZX884-C51
DD
BZX884-C3V3
B4
BZX884-C8V2
BE
BZX884-C22
D4
BZX884-C56
DE
BZX884-C3V6
B5
BZX884-C9V1
BF
BZX884-C24
D5
BZX884-C62
DF
BZX884-C3V9
B6
BZX884-C10
BG
BZX884-C27
D6
BZX884-C68
DG
BZX884-C4V3
B7
BZX884-C11
BH
BZX884-C30
D7
BZX884-C75
DH
BZX884-C4V7
B8
BZX884-C12
BJ
BZX884-C33
D8
BZX884-C5V1
B9
BZX884-C13
BK
BZX884-C36
D9
BZX884-C5V6
BA
BZX884-C15
BL
BZX884-C39
DA
2004 Mar 26
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX884 series
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BZX884-B2V4
to
BZX884-B75
−
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm
SOD882
BZX884-C2V4
to
BZX884-C75
−
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm
SOD882
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
200
UNIT
IF
continuous forward current
IZSM
non-repetitive peak reverse
current
tp = 100 µs; square wave;
Tamb = 25 °C; prior to surge
see Tables 1 and
2
mA
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
250
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
mW
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2004 Mar 26
3
VALUE
UNIT
500
K/W
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX884 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
2004 Mar 26
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
BZX884-B/C2V4
VR = 1 V
50
µA
BZX884-B/C2V7
VR = 1 V
20
µA
BZX884-B/C3V0
VR = 1 V
10
µA
BZX884-B/C3V3
VR = 1 V
5
µA
BZX884-B/C3V6
VR = 1 V
5
µA
BZX884-B/C3V9
VR = 1 V
3
µA
BZX884-B/C4V3
VR = 1 V
3
µA
BZX884-B/C4V7
VR = 2 V
3
µA
BZX884-B/C5V1
VR = 2 V
2
µA
BZX884-B/C5V6
VR = 2 V
1
µA
BZX884-B/C6V2
VR = 4 V
3
µA
BZX884-B/C6V8
VR = 4 V
2
µA
BZX884-B/C7V5
VR = 5 V
1
µA
BZX884-B/C8V2
VR = 5 V
700
nA
BZX884-B/C9V1
VR = 6 V
500
nA
BZX884-B/C10
VR = 7 V
200
nA
BZX884-B/C11
VR = 8 V
100
nA
BZX884-B/C12
VR = 8 V
100
nA
BZX884-B/C13
VR = 8 V
100
nA
BZX884-B/C15 to 75
VR = 0.7 VZnom
50
nA
4
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
DIFFERENTIAL RESISTANCE
rdif (Ω)
Tol. ±2% (B)
Tol. ±5% (C)
at IZtest = 1 mA
at IZtest = 5 mA
MIN.
MIN.
TYP.
TYP.
MAX.
MAX.
MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
Tamb = 25 °C
TYP.
MAX.
MAX.
MAX.
2V4
2.35
2.45
2.28
2.52
275
400
70
100
−1.3
450
6.0
2V7
2.65
2.75
2.57
2.84
300
450
75
100
−1.4
440
6.0
3V0
2.94
3.06
2.85
3.15
325
500
80
95
−1.6
425
6.0
5
3.37
3.14
3.47
350
500
85
95
−1.8
410
6.0
3.67
3.42
3.78
375
500
85
90
−1.9
390
6.0
3V9
3.82
3.98
3.71
4.10
400
500
85
90
−1.9
370
6.0
4V3
4.21
4.39
4.09
4.52
410
600
80
90
−1.7
350
6.0
4V7
4.61
4.79
4.47
4.94
425
500
50
80
−1.2
325
6.0
5V1
5.00
5.20
4.85
5.36
400
480
40
60
−0.5
300
6.0
5V6
5.49
5.71
5.32
5.88
80
400
15
40
1.0
275
6.0
6V2
6.08
6.32
5.89
6.51
40
150
6
10
2.2
250
6.0
6V8
6.66
6.94
6.46
7.14
30
80
6
15
3.0
215
6.0
7V5
7.35
7.65
7.13
7.88
15
80
2
10
3.6
170
4.0
8V2
8.04
8.36
7.79
8.61
20
80
2
10
4.3
150
4.0
9V1
8.92
9.28
8.65
9.56
20
100
2
10
5.2
120
3.0
10
9.80
10.20
9.50
10.50
20
150
2
10
6.0
110
3.0
11
10.78
11.22
10.45
11.55
25
150
2
10
6.9
110
2.5
12
11.76
12.24
11.40
12.60
25
150
2
10
7.9
105
2.5
13
12.74
13.26
12.35
13.65
25
170
2
10
8.8
105
2.5
15
14.70
15.30
14.25
15.75
25
200
3
15
10.7
100
2.0
16
15.68
18.32
15.20
16.80
50
200
10
40
12.4
90
1.5
18
17.64
18.36
17.10
18.90
50
225
10
45
14.4
80
1.5
20
19.60
20.40
19.00
21.00
60
225
15
55
16.4
70
1.5
22
21.56
22.44
20.90
23.10
60
250
20
55
18.4
60
1.25
24
23.52
24.48
22.80
25.20
60
250
25
70
20.4
55
1.25
Product specification
3.23
3.53
BZX884 series
3V3
3V6
Philips Semiconductors
BZX884B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA
Voltage regulator diodes
2004 Mar 26
Table 1 Per type BZX884-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
Tamb = 25 °C
TYP.
MAX.
MAX.
6
Tol. ±2% (B)
Tol. ±5% (C)
MIN.
MAX.
MIN.
MAX.
27
26.46
27.54
25.65
28.35
65
300
25
80
23.4
50
1.0
30
29.40
30.60
28.50
31.50
70
300
30
80
26.6
50
1.0
33
32.34
33.66
31.35
34.65
75
325
35
80
29.7
45
0.9
36
35.28
36.72
34.20
37.80
80
350
35
90
33.0
45
0.8
39
38.22
39.78
37.05
40.95
80
350
40
130
36.4
45
0.7
43
42.14
43.86
40.85
45.15
85
375
45
150
41.2
40
0.6
47
46.06
47.94
44.65
49.35
85
375
50
170
46.1
40
0.5
51
49.98
52.02
48.45
53.55
90
400
60
180
51.0
40
0.4
56
54.88
57.12
53.20
58.80
100
425
70
200
57.0
40
0.3
62
60.76
63.24
58.90
65.10
120
450
80
215
64.4
35
0.3
68
66.64
69.36
64.60
71.40
150
475
90
240
71.7
35
0.25
75
73.50
76.50
71.25
78.75
170
500
95
255
80.2
35
0.2
at IZtest = 0.5 mA
TYP.
MAX.
at IZtest = 2 mA
TYP.
MAX.
Philips Semiconductors
BZX884B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZ = 2 mA
Voltage regulator diodes
2004 Mar 26
Table 2 Per type BZX884-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
Product specification
BZX884 series
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX884 series
GRAPHICAL DATA
MLD444
MBG781
0.5
300
handbook, halfpage
handbook, halfpage
SZ
(mV/K)
IF
(mA)
4V7
0
4V3
200
−0.5
2V4
2V7
3V9
−1
100
3V6
−1.5
0
0.6
0.8
−2
10−1
1
VF (V)
3V3
3V0
1
Tj = 25 °C.
BZX884-B/C2V4 to B/C4V7.
Tj = 25 to 150 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MLD445
12
handbook, halfpage
15
SZ
(mV/K)
13
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
8
4
0
−4
10−1
1
10
IZ (mA)
102
BZX884-B/C5V1 to B/C15.
Tj = 25 to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
2004 Mar 26
7
10
IZ (mA)
102
Temperature coefficient as a function of
working current; typical values.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX884 series
PACKAGE OUTLINE
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
L
SOD882
L
1
2
b
e1
A
A1
E
D
(2)
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
D
E
e1
L
mm
0.50
0.46
0.03
0.55
0.47
0.62
0.55
1.02
0.95
0.65
0.30
0.22
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
03-04-16
03-04-17
SOD882
2004 Mar 26
EUROPEAN
PROJECTION
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX884 series
SOLDERING
Reflow soldering is the only recommended soldering method.
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Mar 26
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp10
Date of release: 2004
Mar 26
Document order number:
9397 750 12713