PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X. 1.2 Features ■ ■ ■ ■ SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation 1.3 Applications ■ Major application segments: ◆ Automotive 42 V power ◆ Telecom infrastructure ◆ Industrial ■ Peripheral driver: ◆ Driver in low supply voltage applications (e.g. lamps and LEDs) ◆ Inductive load driver (e.g. relays, buzzers and motors) ■ DC-to-DC converter 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - 100 V - - 1 A - - 3 A - 165 200 mΩ VCEO collector-emitter voltage IC collector current (DC) ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [1] PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Symbol 2 3 3 2 1 1 sym042 3. Ordering information Table 3: Ordering information Type number PBSS8110X Package Name Description Version SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4: Marking codes Type number Marking code [1] PBSS8110X *4B [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 2 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 120 V VCEO collector-emitter voltage open base - 100 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) - 1 A ICM peak collector current - 3 A IB base current (DC) single pulse; tp ≤ 1 ms Tamb ≤ 25 °C total power dissipation Ptot - 300 mA [1] - 0.55 W [2] - 1.4 W [3] - 2.0 W Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa408 2.0 (1) Ptot (W) 1.6 (2) 1.2 0.8 (3) 0.4 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB; mounting pad for collector 6 cm2 (3) FR4 PCB; standard footprint Fig 1. Power derating curves 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 3 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [1] - - 227 K/W [2] - - 89 K/W [3] - - 63 K/W - - 16 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa409 103 duty cycle = 1 0.75 2 10 0.5 0.33 0.2 Zth(j-a) (K/W) 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB; standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 4 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 006aaa411 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB; mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 102 Zth(j-a) (K/W) 006aaa410 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 5 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 80 V; IE = 0 A - - 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off current VCE = 80 V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 10 V; IC = 1 mA 150 - - 150 - 500 VCE = 10 V; IC = 250 mA VCEsat collector-emitter saturation voltage VCE = 10 V; IC = 500 mA [1] 100 - - VCE = 10 V; IC = 1 A [1] 80 - - - - 40 mV IC = 100 mA; IB = 10 mA IC = 500 mA; IB = 50 mA - - 120 mV - - 200 mV - 165 200 mΩ IC = 1 A; IB = 100 mA [1] RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA [1] VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA - - 1.05 V VBEon base-emitter turn-on voltage VCE = 10 V; IC = 1 A - - 0.9 V td delay time VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = −0.025 A - 25 - ns tr rise time - 220 - ns ton turn-on time - 245 - ns ts storage time - 365 - ns tf fall time - 185 - ns toff turn-off time - 550 - ns fT transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 7.5 pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 6 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa497 600 001aaa495 1000 VBE (mV) hFE (1) 800 (1) 400 (2) (2) 600 (3) 200 (3) 400 0 10−1 1 102 10 103 104 IC (mA) VCE = 10 V 200 10−1 1 10 102 103 104 IC (mA) VCE = 10 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 5. DC current gain as a function of collector current; typical values 001aaa504 103 Fig 6. Base-emitter voltage as a function of collector current; typical values 001aaa505 103 VCEsat (mV) VCEsat (mV) 102 102 (1) (2) (3) 10 10−1 1 10 102 103 104 IC (mA) 10 10−1 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 7 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa506 104 001aaa498 1200 VBEsat (mV) VCEsat (mV) 1000 (1) 103 800 (2) (3) 600 102 400 10 10−1 1 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C 200 10−1 1 10 102 103 104 IC (mA) IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa499 1200 Fig 10. Base-emitter saturation voltage as a function of collector current; typical values VBEsat (mV) RCEsat (Ω) 1000 102 800 10 600 1 400 10−1 1 10 102 001aaa501 103 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C 10−1 10−1 (1) (2) (3) 1 10 102 103 104 IC (mA) IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 11. Base-emitter saturation voltage as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 8 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa502 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 10−1 10−1 1 10 102 001aaa503 103 10−1 10−1 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C 1 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C Fig 13. Collector-emitter saturation resistance as a function of collector current; typical values Fig 14. Collector-emitter saturation resistance as a function of collector current; typical values 001aaa496 2 IC (A) (1) (2) (3) (4) (5) 1.6 (6) 1.2 (7) (8) (9) 0.8 (10) 0.4 0 0 1 2 3 4 5 VCE (V) Tamb = 25 °C (1) IB = 35 mA (2) IB = 31.5 mA (3) IB = 28 mA (4) IB = 24.5 mA (5) IB = 21 mA (6) IB = 17.5 mA (7) IB = 14 mA (8) IB = 10.5 mA (9) IB = 7 mA (10) IB = 3.5 mA Fig 15. Collector current as a function of collector-emitter voltage; typical values 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 9 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 16. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = −0.025 A Fig 17. Test circuit for switching times 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 10 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 04-08-03 Fig 18. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS8110X [1] Package SOT89 Description 8 mm pitch, 12 mm tape and reel 1000 4000 -115 -135 For further information and the availability of packing methods, see Section 18. 9397 750 14956 Product data sheet Packing quantity © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 11 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 11. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 0.50 1.20 1.20 1.00 (3x) 3 2 1 msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 19. Reflow soldering footprint SOT89 (SC-62/TO-243) 12. Mounting 32 mm 30 mm 32 mm 40 mm 2.5 mm 20 mm 40 mm 1 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 001aaa234 Fig 20. FR4 PCB, standard footprint 9397 750 14956 Product data sheet 5 mm 1.6 mm 001aaa235 Fig 21. FR4 PCB, mounting pad for collector 6 cm2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 12 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 13. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS8110X_1 20050511 Product data sheet - 9397 750 14956 - 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 13 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 14. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 15. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 17. Trademarks 16. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 18. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14956 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 11 May 2005 14 of 15 PBSS8110X Philips Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 19. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information . . . . . . . . . . . . . . . . . . . . 14 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 May 2005 Document number: 9397 750 14956 Published in The Netherlands