74HC3G34; 74HCT3G34 Triple buffer gate Rev. 05 — 7 May 2009 Product data sheet 1. General description The 74HC3G34; 74HCT3G34 are high-speed Si-gate CMOS devices. They provide three buffer gates. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V. The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. 2. Features n n n n n n n Wide supply voltage range from 2.0 V to 6.0 V Symmetrical output impedance High noise immunity Low-power dissipation Balanced propagation delays Multiple package options ESD protection: u HBM JESD22-A114E exceeds 2000 V u MM JESD22-A115-A exceeds 200 V n Specified from −40 °C to +85 °C and −40 °C to +125 °C 3. Ordering information Table 1. Ordering information Type number 74HC3G34DP Package Temperature range Name Description Version −40 °C to +125 °C TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2 −40 °C to +125 °C VSSOP8 plastic very thin shrink small outline package; 8 leads; SOT765-1 body width 2.3 mm −40 °C to +125 °C XSON8U plastic extremely thin small outline package; no leads; SOT996-2 8 terminals; UTLP based; body 3 × 2 × 0.5 mm 74HCT3G34DP 74HC3G34DC 74HCT3G34DC 74HC3G34GD 74HCT3G34GD 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate 4. Marking Table 2. Marking Type number Marking code 74HC3G34DP H34 74HCT3G34DP T34 74HC3G34DC P34 74HCT3G34DC U34 74HC3G34GD P34 74HCT3G34GD U34 5. Functional diagram 1 1A 1Y 7 2 3Y 3A 6 3 2A 2Y 5 1 1 7 3 1 5 6 1 2 mna745 mna744 Fig 1. Logic symbol Fig 2. IEC logic symbol 6. Pinning information 6.1 Pinning 74HC3G34 74HCT3G34 74HC3G34 74HCT3G34 1A 1 8 VCC 3Y 2 7 1Y 2A 3 6 3A GND 4 5 2Y 8 VCC 3Y 2 7 1Y 2A 3 6 3A GND 4 5 2Y 001aak021 Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8) Fig 4. 74HC_HCT3G34_5 Product data sheet 1 Transparent top view 001aae470 Fig 3. 1A Pin configuration SOT996-2 (XSON8U) © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 2 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate 6.2 Pin description Table 3. Pin description Symbol Pin Description 1A, 2A, 3A 1, 3, 6 data input 1Y, 2Y, 3Y 7, 5, 2 data output GND 4 ground (0 V) VCC 8 supply voltage 7. Functional description Table 4. Function table [1] Input Output nA nY L L H H [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage Conditions Min Max Unit −0.5 +7.0 V - ±20 mA - ±20 mA - ±25 mA input clamping current VI < −0.5 V or VI > VCC + 0.5 V [1] IOK output clamping current VO < −0.5 V or VO > VCC + 0.5 V [1] IO output current VO = −0.5 V to (VCC + 0.5 V) ICC quiescent supply current - 50 mA IGND ground current −50 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation - 300 mW IIK Tamb = −40 °C to +125 °C [2] [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For TSSOP8 package: above 55 °C the value of Ptot derates linearly with 2.5 mW/K. For VSSOP8 package: above 110 °C the value of Ptot derates linearly with 8 mW/K. For XSON8U package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K. 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 3 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74HC3G34 Min Typ 74HCT3G34 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C ∆t/∆V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Typ[1] Max Min Max VCC = 2.0 V 1.5 1.2 - 1.5 - V VCC = 4.5 V 3.15 2.4 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - V VCC = 2.0 V - 0.8 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 V IO = −20 µA; VCC = 2.0 V 1.9 2.0 - 1.9 - V IO = −20 µA; VCC = 4.5 V 4.4 4.5 - 4.4 - V IO = −20 µA; VCC = 6.0 V 5.9 6.0 - 5.9 - V IO = −4.0 mA; VCC = 4.5 V 4.13 4.32 - 3.7 - V IO = −5.2 mA; VCC = 6.0 V 5.63 5.81 - 5.2 - V IO = 20 µA; VCC = 2.0 V - 0 0.1 - 0.1 V IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 V IO = 20 µA; VCC = 6.0 V - 0 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.33 - 0.4 V 74HC3G34 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VI = VIH or VIL VI = VIH or VIL II input leakage current VI = VCC or GND; VCC = 6.0 V - - ±1.0 - ±1.0 µA ICC supply current per input pin; VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 10 - 20 µA CI input capacitance - 1.5 - - - pF 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 4 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Min Typ[1] Max Min Max Unit 74HCT3G34 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA; VCC = 4.5 V 4.4 4.5 - 4.4 - V IO = −4.0 mA; VCC = 4.5 V 4.13 4.32 - 3.7 - V LOW-level output voltage VOL VI = VIH or VIL IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.33 - 0.4 V II input leakage current VI = VCC or GND; VCC = 5.5 V - - ±1.0 - ±1.0 µA ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 10 - 20 µA ∆ICC additional supply current per input; VCC = 4.5 V to 5.5 V; VI = VCC − 2.1 V; IO = 0 A - - 375 - 410 µA CI input capacitance - 1.5 - - - pF [1] All typical values are measured at Tamb = 25 °C. 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Typ[1] Max Min Max VCC = 2.0 V - 29 95 - 125 ns VCC = 4.5 V - 9 19 - 25 ns - 8 16 - 20 ns VCC = 2.0 V - 18 95 - 125 ns VCC = 4.5 V - 6 19 - 25 ns - 5 16 - 20 ns - 10 - - - pF 74HC3G34 tpd propagation delay nA to nY; see Figure 5 [2] VCC = 6.0 V tt transition time nY; see Figure 5 [3] VCC = 6.0 V CPD power dissipation VI = GND to VCC capacitance [4] 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 5 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Typ[1] Max Min Max 74HCT3G34 [2] propagation delay nA to nY; see Figure 5 tpd VCC = 4.5 V tt transition time CPD power dissipation VI = GND to VCC − 1.5 V capacitance [1] nY; VCC = 4.5 V; see Figure 5 - 10 23 - 29 ns [3] - 6 19 - 25 ns [4] - 9 - - - pF All typical values are measured at Tamb = 25 °C. [2] tpd is the same as tPLH and tPHL. [3] tt is the same as tTLH and tTHL. [4] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of outputs. 12. Waveforms VI input nA VM VM GND t PHL t PLH VOH output nY 90 % VM VM 10 % VOL t THL t TLH 001aad982 Measurement points are given in Table 9. Fig 5. Propagation delay data input (nA) to data output (nY) and transition time output (nY) Table 9. Measurement points Type Input Output VM VM 74HC3G34 0.5 × VCC 0.5 × VCC 74HCT3G34 1.3 V 1.3 V 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 6 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate VI tW 90 % negative pulse VM 0V VI tf tr tr tf 90 % positive pulse 0V VM 10 % VM VM 10 % tW VCC VCC G VI VO RL S1 open DUT RT CL 001aad983 Test data is given in Table 10. Definitions for test circuit: RT = Termination resistance should be equal to output impedance Zo of the pulse generator. CL = Load capacitance including jig and probe capacitance. RL = Load resistance. S1 = Test selection switch. Fig 6. Test circuit for measuring switching times Table 10. Test data Type Input Load VI tr, tf CL RL tPHL, tPLH 74HC3G34 GND to VCC ≤ 6 ns 50 pF 1 kΩ open 74HCT3G34 GND to 3 V ≤ 6 ns 50 pF 1 kΩ open 74HC_HCT3G34_5 Product data sheet S1 position © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 7 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate 13. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm D E A SOT505-2 X c HE y v M A Z 5 8 A A2 (A3) A1 pin 1 index θ Lp L 1 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(1) e HE L Lp v w y Z(1) θ mm 1.1 0.15 0.00 0.95 0.75 0.25 0.38 0.22 0.18 0.08 3.1 2.9 3.1 2.9 0.65 4.1 3.9 0.5 0.47 0.33 0.2 0.13 0.1 0.70 0.35 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT505-2 Fig 7. REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-01-16 --- Package outline SOT505-2 (TSSOP8) 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 8 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm D E SOT765-1 A X c y HE v M A Z 5 8 Q A A2 A1 pin 1 index (A3) θ Lp 1 4 e L detail X w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(2) e HE L Lp Q v w y Z(1) θ mm 1 0.15 0.00 0.85 0.60 0.12 0.27 0.17 0.23 0.08 2.1 1.9 2.4 2.2 0.5 3.2 3.0 0.4 0.40 0.15 0.21 0.19 0.2 0.13 0.1 0.4 0.1 8° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT765-1 Fig 8. REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-06-07 MO-187 Package outline SOT765-1 (VSSOP8) 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 9 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 x 2 x 0.5 mm B D SOT996-2 A A E A1 detail X terminal 1 index area e1 v w b e L1 1 4 8 5 C C A B C M M y y1 C L2 L X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 b D E e e1 L L1 L2 v w y y1 mm 0.5 0.05 0.00 0.35 0.15 2.1 1.9 3.1 2.9 0.5 1.5 0.5 0.3 0.15 0.05 0.6 0.4 0.1 0.05 0.05 0.1 Fig 9. REFERENCES OUTLINE VERSION IEC SOT996-2 --- JEDEC JEITA --- EUROPEAN PROJECTION ISSUE DATE 07-12-18 07-12-21 Package outline SOT996-2 (XSON8U) 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 10 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate 14. Abbreviations Table 11. Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes 74HC_HCT3G34_5 20090507 Product data sheet - 74HC_HCT3G34_4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Added type number 74HC3G34GD and 74HCT3G34GD (XSON8U package) 74HC_HCT3G34_4 20060309 Product data sheet - 74HC_HCT3G34_3 74HC_HCT3G34_3 20030519 Product specification - 74HC_HCT3G34_2 74HC_HCT3G34_2 20030210 Product specification - 74HC_HCT3G34_1 74HC_HCT3G34_1 20031003 Product specification - - 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 11 of 13 74HC3G34; 74HCT3G34 NXP Semiconductors Triple buffer gate 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74HC_HCT3G34_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 7 May 2009 12 of 13 NXP Semiconductors 74HC3G34; 74HCT3G34 Triple buffer gate 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 May 2009 Document identifier: 74HC_HCT3G34_5