DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D099 BLV861 UHF linear push-pull power transistor Product specification Supersedes data of 1998 Jan 14 1998 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 PINNING FEATURES • Double stage internal input and output matching networks for an optimum wideband capability and high gain PIN SYMBOL DESCRIPTION 1 c1 collector 1; note 1 • Polysilicon emitter ballasting resistors for an optimum temperature profile 2 c2 collector 2; note 1 3 b1 base 1 • Gold metallization ensures excellent reliability. 4 b2 base 2 5 e common emitters; note 2 APPLICATIONS Notes • Common emitter class-AB output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 MHz). 1. Collectors c1 and c2 are internally connected. 2. Common emitters are connected to the flange. DESCRIPTION c1 handbook, halfpage NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. 1 2 b1 e 5 3 b2 4 Top view MAM374 c2 Fig.1 Simplified outline (SOT289A) and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) ∆Gp (dB) CW class-AB 860 28 100 ≥8.5 ≥55 ≤1 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Jan 16 2 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 15 A Ptot total power dissipation Tmb = 25 °C − 220 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink Ptot = 220 W; note 1 Note 1. Thermal resistance is determined under specified RF operating conditions. MGK766 102 handbook, halfpage IC (A) (1) 10 (2) 1 1 10 VCE (V) 102 Total device; both sections equally loaded. (1) Tmb = 25 °C. (2) Th = 70 °C. Fig.2 DC SOAR. 1998 Jan 16 3 VALUE UNIT 0.8 K/W 0.2 K/W Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 CHARACTERISTICS Values apply to either transistor section; Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. − 65 MAX. − UNIT V(BR)CBO collector-base breakdown voltage IE = 0; IC = 35 mA V V(BR)CEO collector-emitter breakdown voltage IB = 0; IC = 90 mA 30 − − V V(BR)EBO emitter-base breakdown voltage IE = 2 mA; IC = 0 3 − − V ICBO collector-base leakage current VCB = 28 V − − 3 mA hFE DC current gain IC = 2.8 A; VCE = 10 V 30 − 120 − ∆hFE DC current gain ratio of both sections IC = 4.5 A; VCE = 10 V 0.67 − 1.5 − Cc collector capacitance IE = ie= 0; VCE = 28 V; f = 1 MHz; note 1 − 47 − pF Note 1. The value of Cc is that of the die only; it is not measurable because of the internal matching network. APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull class-AB test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (A) PL (W) Gp (dB) ηC (%) ∆Gp (dB) CW class-AB 860 28 0.1 100 ≥8.5 ≥55 ≤1 Ruggedness in class-AB operation The BLV861 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the conditions: Th = 25 °C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A; PL = 100 W; Rth mb-h = 0.2 K/W. 1998 Jan 16 4 Philips Semiconductors Product specification UHF linear push-pull power transistor MGK768 16 handbook, halfpage Gp (dB) BLV861 80 ηC (%) ηC MGK769 150 handbook, halfpage PL (W) 60 12 Gp 100 8 40 4 20 50 0 160 0 0 40 80 120 0 0 20 10 PL (W) PD (W) Th = 25 °C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A. Th = 25 °C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A. Fig.3 Fig.4 Power gain and collector efficiency as functions of load power; typical values. MGK770 −20 30 Load power as a function of drive power; typical values. MGK771 −20 handbook, halfpage handbook, halfpage dim (dB) dim (dB) −30 −30 d3 −40 −40 d5 −50 −60 −50 0 100 200 −60 300 400 Po sync (dB) 0 50 100 Th = 25 °C; VCE = 28 V; ICQ = 0.1 A; 2-tone: fvision = 855.25 MHz (−8 dB); fsideband = 859.68 MHz (−16 dB). Th = 25 °C; VCE = 28 V; ICQ = 0.1 A; 3-tone: fvision = 855.25 MHz (−8 dB); fsideband = 859.68 MHz (−16 dB); fsound = 860.75 MHz (−10 dB). Fig.5 Fig.6 Intermodulation distortion as a function of output power; typical values. 1998 Jan 16 5 150 200 250 Po sync (W) Intermodulation distortion as a function of output power; typical values. Philips Semiconductors Product specification UHF linear push-pull power transistor handbook, full pagewidth Vbias R4 BLV861 TR3 VCE = 28 V P1 R3 R5 TR2 C15 C14 ,,, ,,, ,,,, ,,, ,,,, ,,,,, ,,,, L4 TR1 L6 L2 C1 50 Ω input B1 C5 R1 Vbias L8 R2 L1 C7 C6 L3 C8 C9 VCE = 28 V C13 B2 50 Ω output L7 L5 C2 C3 C4 C10 C11 C12 MGK775 Fig.7 Class-AB test circuit at 860 MHz. 1998 Jan 16 6 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 140 handbook, full pagewidth 70 R3 R4 R5 TR2 X1 C14 P1 C15 VCE TR3 X2 B1 50 Ω input 50 Ω output C2 C1 R1 R2 C11 C8 C3 C5 C6 C9 C13 C12 C7 B2 TR1 C10 C4 MGK776 Dimensions in mm. The components are situated on one side of the copper-clad PTFE-glass board (TLX8) from Taconic, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Printed-circuit board and component layout for the 860 MHz class-AB test circuit. 1998 Jan 16 7 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C13 multilayer ceramic chip capacitor; note 1 15 pF C2, C11, C15 multilayer ceramic chip capacitor 15 nF 0805 2222 590 16629 C3, C12 multilayer ceramic chip capacitor 100 nF 1206 2222 581 16641 C4, C10 solid aluminium capacitor 100 µF; 40 V C5 multilayer ceramic chip capacitor; note 2 8.2 pF C6 multilayer ceramic chip capacitor + Tekelek trimmer; note 2 C7 multilayer ceramic chip capacitor; note 3 10 pF C8 multilayer ceramic chip capacitor; note 3 2.7 pF C9 multilayer ceramic chip capacitor; note 2 3 pF C14 multilayer ceramic chip capacitor; note 1 100 nF L1, L8 stripline; note 4 46 × 1.8 mm L2, L3 stripline; note 4 20 × 5 mm L4, L5 stripline; note 4 10 × 10 mm L6, L7 stripline; note 4 21 × 5 mm B1 semi rigid coax balun UT70-25 2222 031 37101 10 pF; 0.6 to 4.5 pF Z = 25 Ω ±1.5 Ω 46 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 46 mm R1, R2, R4 SMD resistor 1Ω 0805 2122 118 04562 R3 SMD resistor 47 Ω 0805 2122 118 04598 R5 SMD resistor 1.2 kΩ 0805 2122 118 04579 P1 potentiometer 4.7 kΩ X1, X2 copper ribbon hairpin TR1 NPN push-pull RF transistor BLV861 9340 542 40112 TR2, TR3 NPN transistor BD139 9330 912 20112 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. American Technical Ceramics type 180R or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: PTFE-glass material (TLX8) from Taconic (εr = 2.55); thickness 0.5 mm. 1998 Jan 16 8 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 MGK772 5 MGK773 8 handbook, halfpage handbook, halfpage ZL (Ω) Zi (Ω) 6 4 4 ri 3 RL 2 0 2 −2 XL 1 −4 xi 0 400 500 600 700 −6 400 800 900 f (MHz) 500 600 700 800 900 f (MHz) Th = 25 °C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device). Th = 25 °C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device). Fig.9 Fig.10 Load impedance (per section) as a function of frequency (series components); typical values. Input impedance (per section) as a function of frequency (series components); typical values. MGK774 12 p (dB) 10 handbook, G halfpage ηC Gp 8 60 ηC (%) 50 40 6 30 4 20 2 10 handbook, halfpage Zi 0 400 500 600 700 ZL MBA451 0 800 900 f (MHz) Th = 25 °C; VCE = 28 V; ICQ = 0.1 A; PL = 100 W (total device). Fig.11 Power gain and collector efficiency as functions of frequency; typical values. 1998 Jan 16 Fig.12 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT289A D A F 5 U1 B q C w2 M C H1 1 H c 2 U2 p E w1 M A B A 3 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E e F H H1 p Q q U1 U2 w1 w2 w3 mm 4.65 3.92 3.33 3.07 0.10 0.05 13.10 12.90 11.53 11.33 4.60 1.65 1.40 19.81 19.05 4.85 4.34 3.43 3.17 2.31 2.06 21.44 28.07 27.81 11.81 11.56 0.51 1.02 0.25 inches 0.183 0.154 0.131 0.004 0.121 0.002 0.516 0.508 0.454 0.181 0.446 0.091 0.844 0.081 1.105 1.095 0.465 0.455 0.02 0.04 0.01 OUTLINE VERSION 0.065 0.780 0.055 0.750 0.191 0.135 0.171 0.125 REFERENCES IEC JEDEC EIAJ SOT289A 1998 Jan 16 EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV861 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127047/00/05/pp12 Date of release: 1998 Jan 16 Document order number: 9397 750 03212