DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D050 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 20 Philips Semiconductors Product specification 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes FEATURES DESCRIPTION • Temperature compensated Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. • Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V) • Low temperature coefficient range: max. 0.0005 to 0.01 %/K. k handbook, halfpage a APPLICATION MAM216 • Voltage reference sources in measuring instruments such as digital voltmeters. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER IZ working current CONDITIONS MAX. − 50 UNIT mA Ptot total power dissipation − 400 Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −55 +100 °C 1996 Mar 20 Tamb = 50 °C MIN. 2 mW Philips Semiconductors Product specification 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. Vref reference voltage IZ =7.5 mA 5.89 6.20 ∆Vref reference voltage excursion IZ =7.5 mA; test points for Tamb: −55; +25; +75; +100 °C; see Fig.2; notes 1 and 2 − − 96 mV − − 48 mV 1N825; 1N825A − − 19 mV 1N827; 1N827A − − 9 mV 1N829; 1N829A − − 5 mV − − 0.01 %/K 1N823; 1N823A − − 0.005 %/K 1N825; 1N825A − − 0.002 %/K 1N827; 1N827A − − 0.001 %/K 1N829; 1N829A − − 0.0005 %/K 1N821 to 1N829 − − 15 Ω 1N821A to 1N829A − − 10 Ω 1N821; 1N821A 1N823; 1N823A SZ temperature coefficient 1N821; 1N821A rdif differential resistance IZ = 7.5 mA: see Fig.3; notes 1 and 2 6.51 UNIT V IZ = 7.5 mA; see Fig.4 Notes 1. The quoted values of ∆Vref are based on a constant current IZ. Two factors can cause ∆Vref to change, namely the differential resistance rdif and the temperature coefficient SZ. a) As the max. rdif of the device can be 15 Ω, a change of 0.01 mA in the current through the reference diode will result in a ∆Vref of 0.01 mA × 15 Ω = 0.15 mV. This level of ∆Vref is not significant on a 1N821 (∆Vref < 96 mV), it is however very significant on a 1N829 (∆Vref < 5 mV). b) The temperature coefficient of the reference voltage SZ is a function of IZ. Reference diodes are classified at the specified test current and the SZ of the reference diode will be different at different levels of IZ. The absolute value of IZ is important, however, the stability of IZ, once the level has been set, is far more significant. This applies particularly to the 1N829. The effect of the stability of IZ on SZ is shown in Fig.3. 2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (∆Vref) over the specified temperature range, at the specified test current (IZ), verified by tests at indicated temperature points within the range. VZ is measured and recorded at each temperature specified. The ∆Vref between the highest and lowest values must not exceed the maximum ∆Vref given. Therefore the temperature coefficient is only given as V ref1 – V ref2 100 a reference. It may be derived from: S Z = -------------------------------------- × -------------------- %/K T amb2 – T amb1 V ref nom THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 8 mm from the body 300 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm 375 K/W 1996 Mar 20 3 Philips Semiconductors Product specification 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes GRAPHICAL DATA MBG534 10 handbook, halfpage IZ (mA) (3) MBG536 0.002 ∆SZ (%/K) handbook, halfpage (2) (1) 0.001 7.5 0 −0.001 5 (1) (2) 2.5 -75 −0.002 (3) -50 -25 0 25 ∆Vref(max) (mV) −0.003 50 4 5 6 7 8 9 10 IZ (mA) 11 Referenced to IZ = 7.5 mA. (1) Tj = 100 °C. (2) Tj = 25 °C. (3) Tj = −55 °C. Fig.2 Working current as a function of the maximum reference voltage excursion. Fig.3 MBG535 103 handbook, halfpage rdif (Ω) 102 (1) (2) (3) 10 1 1 10 IZ (mA) 102 (1) Tj = 100 °C. (2) Tj = 25 °C. (3) Tj = −55 °C. Fig.4 1996 Mar 20 Differential resistance as a function of working current; typical values. 4 Temperature coefficient change as a function of working current; typical values. Philips Semiconductors Product specification 1N821 to 1N829 1N821A to 1N829A Voltage reference diodes PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. The marking band indicates the cathode. The diodes are type branded. Fig.5 SOD68 (DO-34). DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 20 5