DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product specification 2002 Nov 07 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor PUMF12 QUICK REFERENCE DATA FEATURES • General purpose transistor and resistor equipped transistor in one package SYMBOL PARAMETER MAX. UNIT TR1 (PNP) • 100 mA collector current VCEO collector-emitter voltage −50 V IC collector current (DC) −100 mA • SOT363 package; replaces two SOT323 (SC-70) packaged devices on same PCB area ICM peak collector current −200 mA • Reduced pick and place costs. VCEO collector-emitter voltage 50 V IO output current (DC) 100 mA APPLICATIONS R1 bias resistor 22 kΩ • Power management switch for portable equipment, e.g. cellular phone and CD player R2 bias resistor 47 kΩ • 50 V collector-emitter voltage • 300 mW total power dissipation TR2 (NPN) • Switch for regulator. PINNING PIN DESCRIPTION DESCRIPTION 1, 4 emitter TR1; TR2 PNP general purpose transistor and an NPN resistor-equipped transistor in a SOT363 (SC-88) plastic package. 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 MARKING TYPE NUMBER PUMF12 6 5 6 handbook, halfpage MARKING CODE(1) 5 4 4 R2∗ R1 R2 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. TR2 TR1 1 Top view 2 3 MCE153 1 2 3 Fig.1 Simplified outline (SOT363) and symbol. 2002 Nov 07 2 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor PUMF12 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature range −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C V TR1 (PNP) VCBO collector-base voltage open emitter − −50 VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA TR2 (NPN) VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V Vi input voltage positive − +40 V negative − −10 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA − 300 mW Per device Ptot Tamb ≤ 25 °C; note 1 total power dissipation Note 1. Device mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2002 Nov 07 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor PUMF12 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCB = −30 V; IE = 0 − − −100 nA TR1 (PNP) ICBO collector cut-off current VCB = −30 V; IE = 0; Tj = 150 °C − − −10 µA IEBO emitter cut-off current VEB = −4 V; IC = 0 − − −100 nA VCEsat saturation voltage IC = −50 mA; IB = −5 mA; note 1 − − −200 mV hFE DC current gain VCE = −6 V; IC = −1 mA 120 − − Cc collector capacitance VCB = −12 V; IE = ie = 0; f = 1 MHz − fT transition frequency VCE = −12 V; IC = −2 mA; f = 100 MHz 100 ICBO collector-base cut-off current VCB = 50 V; IE = 0 ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 VCE = 30 V; IB = 0; Tj = 150 °C − − 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 120 µA hFE DC current gain VCE = 5 V; IC = 5 mA 80 − − VCEsat saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 Vi(off) input off voltage VCE = 5 V; IC = 100 µA − 0.9 0.5 V Vi(on) input on voltage VCE = 0.3 V; IC = 2 mA 2 1.1 − V R1 input resistor 15.4 22 28.6 kΩ R2 ------R1 resistor ratio 1.7 2.1 2.6 Cc collector capacitance − − 2.5 − 2.2 pF − − MHz − − 100 nA − − 1 µA TR2 (NPN) VCB = 10 V; IE = ie = 0; f = 1 MHz Note 1. Device mounted on an FR4 printed-circuit board. APPLICATION INFORMATION 1 handbook, halfpage 6 2 RBE(ext) RB(ext) 3 R1 5 R2 4 MHC322 Fig.2 Typical power management circuit. 2002 Nov 07 4 mV pF Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor PUMF12 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 Nov 07 REFERENCES IEC JEDEC EIAJ SC-88 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor PUMF12 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Nov 07 6 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor PUMF12 NOTES 2002 Nov 07 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Nov 07 Document order number: 9397 750 10311