PESDxS2UQ series Double ESD protection diodes in SOT663 package Rev. 04 — 26 January 2010 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features Unidirectional ESD protection of up to ESD protection up to 30 kV two lines Max. peak pulse power: PPP = 150 W IEC 61000-4-2; level 4 (ESD) at tp = 8/20 μs IEC 61000-4-5 (surge); IPP = 15 A Low clamping voltage: VCL = 20 V at IPP = 15 A at tp = 8/20 μs Low reverse leakage current: IRM < 1 nA 1.3 Applications Computers and peripherals Audio and video equipment Communication systems High-speed data lines Parallel ports 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Conditions PESD3V3S2UQ Cd Min Typ Max Unit - - 3.3 V PESD5V0S2UQ - - 5 V PESD12VS2UQ - - 12 V PESD15VS2UQ - - 15 V PESD24VS2UQ - - 24 V PESD3V3S2UQ - 200 275 pF PESD5V0S2UQ - 150 215 pF PESD12VS2UQ - 38 100 pF PESD15VS2UQ - 32 70 pF PESD24VS2UQ - 23 50 pF diode capacitance f = 1 MHz; VR = 0 V PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 common anode Simplified outline Graphic symbol 3 1 3 2 1 2 006aaa154 3. Ordering information Table 3. Ordering information Type number PESD3V3S2UQ Package Name Description Version - plastic surface-mounted package; 3 leads SOT663 PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ 4. Marking Table 4. Marking codes Type number Marking code PESD3V3S2UQ E1 PESD5V0S2UQ E2 PESD12VS2UQ E3 PESD15VS2UQ E4 PESD24VS2UQ E5 PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 2 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPP peak pulse power tp = 8/20 μs [1][2] IPP peak pulse current tp = 8/20 μs [1][2] - 150 W PESD3V3S2UQ - 15 A PESD5V0S2UQ - 15 A PESD12VS2UQ - 5 A PESD15VS2UQ - 5 A PESD24VS2UQ - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Per diode Per device [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured across either pins 1 and 3 or pins 2 and 3. Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit - 30 kV Per diode VESD PESD3V3S2UQ PESD5V0S2UQ - 30 kV PESD12VS2UQ - 30 kV PESD15VS2UQ - 30 kV PESD24VS2UQ - 23 kV - 10 kV PESDxS2UQ series MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured across either pins 1 and 3 or pins 2 and 3. Table 7. [1][2] ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 3 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 μs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Characteristics Table 8. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 3.3 V Per diode VRWM reverse standoff voltage PESD3V3S2UQ IRM VBR PESD5V0S2UQ - - 5 V PESD12VS2UQ - - 12 V PESD15VS2UQ - - 15 V PESD24VS2UQ - - 24 V reverse leakage current PESD3V3S2UQ VRWM = 3.3 V - 0.55 3 μA PESD5V0S2UQ VRWM = 5 V - 50 300 nA PESD12VS2UQ VRWM = 12 V - <1 30 nA PESD15VS2UQ VRWM = 15 V - <1 50 nA PESD24VS2UQ VRWM = 24 V - <1 50 nA PESD3V3S2UQ 5.2 5.6 6.0 V PESD5V0S2UQ 6.4 6.8 7.2 V PESD12VS2UQ 14.7 15.0 15.3 V PESD15VS2UQ 17.6 18.0 18.4 V PESD24VS2UQ 26.5 27.0 27.5 V breakdown voltage IR = 5 mA PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 4 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package Table 8. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3S2UQ - 200 275 pF PESD5V0S2UQ - 150 215 pF PESD12VS2UQ - 38 100 pF PESD15VS2UQ - 32 70 pF - 23 50 pF IPP = 1 A - - 8 V IPP = 15 A - - 20 V PESD5V0S2UQ IPP = 1 A - - 9 V IPP = 15 A - - 20 V PESD12VS2UQ IPP = 1 A - - 19 V IPP = 5 A - - 35 V PESD15VS2UQ IPP = 1 A - - 23 V IPP = 5 A - - 40 V PESD24VS2UQ IPP = 1 A - - 36 V IPP = 3 A - - 70 V PESD24VS2UQ VCL clamping voltage PESD3V3S2UQ rdif [1][2] differential resistance PESD3V3S2UQ IR = 5 mA - - 40 Ω PESD5V0S2UQ IR = 5 mA - - 15 Ω PESD12VS2UQ IR = 5 mA - - 15 Ω PESD15VS2UQ IR = 1 mA - - 225 Ω PESD24VS2UQ IR = 0.5 mA - - 300 Ω [1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured across either pins 1 and 3 or pins 2 and 3. PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 5 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 001aaa726 104 001aaa193 1.2 PPP PPP (W) PPP(25°C) 103 0.8 102 0.4 10 1 102 10 0 103 0 50 100 150 200 Tj (°C) tp (μs) Tamb = 25 °C Fig 3. Peak pulse power dissipation as a function of pulse duration; typical values Fig 4. 001aaa727 240 Cd (pF) Relative variation of peak pulse power as a function of junction temperature; typical values 001aaa728 50 Cd (pF) 200 40 160 30 (1) 120 20 (2) (1) (2) 80 10 40 (3) 0 0 1 2 3 4 5 0 5 10 15 VR (V) 20 25 VR (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C (1) PESD3V3S2UQ; VRWM = 3.3 V (1) PESD12VS2UQ; VRWM = 12 V (2) PESD5V0S2UQ; VRWM = 5 V (2) PESD15VS2UQ; VRWM = 15 V (3) PESD24VS2UQ; VRWM = 24 V Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 6 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 001aaa729 10 IRM IRM(25°C) (1) (2) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3S2UQ; VRWM = 3.3 V (2) PESD5V0S2UQ; VRWM = 5 V IR is less than 15 nA at 150 °C for: PESD12VS2UQ; VRWM = 12 V PESD15VS2UQ; VRWM = 15 V PESD24VS2UQ; VRWM = 24 V Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 7 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 10× ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω CZ note 1 Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT: PESDxS2UQ vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS2UQ GND PESD15VS2UQ GND GND PESD12VS2UQ GND PESD5V2S2UQ GND PESD3V3S2UQ GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 10 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) 001aaa731 Fig 8. ESD clamping test setup and waveforms PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 8 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 7. Application information The PESDxS2UQ series is designed for the protection of up to two unidirectional data lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are below ground. The PESDxS2UQ series provides a surge capability of up to 150 W (PPP) per line for an 8/20 μs waveform. line 1 to be protected line 1 to be protected line 2 to be protected PESDxS2UQ PESDxS2UQ ground unidirectional protection of two lines Fig 9. ground bidirectional protection of one line 001aaa730 Typical application: ESD protection of data lines Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 9 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 8. Package outline 1.7 1.5 0.6 0.5 3 0.3 0.1 1.7 1.5 1.3 1.1 1 2 0.33 0.23 0.5 0.18 0.08 1 Dimensions in mm 02-05-21 Fig 10. Package outline PESDxS2UQ series (SOT663) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3S2UQ Package Description Packing quantity 4000 8000 SOT663 2 mm pitch, 8 mm tape and reel - -315 SOT663 4 mm pitch, 8 mm tape and reel -115 - PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ [1] For further information and the availability of packing methods, see Section 12. PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 10 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXS2UQ_SER_4 20100126 Product data sheet - PESDXS2UQ_SER_N_3 Modifications: PESDXS2UQ_SER_N_3 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 1.1 “General description”: amended Section 1.4 “Quick reference data”: amended Table 2 “Pinning”: updated Section 7 “Application information”: amended Figure 10: superseded by minimized package outline drawing Section 9 “Packing information”: added Section 11 “Legal information”: updated 20080911 Product data sheet - PESDXS2UQ_SERIES_2 PESDXS2UQ_SERIES_2 20040427 Product specification - PESDXS2UQ_SERIES_1 PESDXS2UQ_SERIES_1 20031215 Product specification - - PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 11 of 13 PESDxS2UQ series NXP Semiconductors Double ESD protection diodes in SOT663 package 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESDXS2UQ_SER_4 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 04 — 26 January 2010 12 of 13 NXP Semiconductors PESDxS2UQ series Double ESD protection diodes in SOT663 package 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 January 2010 Document identifier: PESDXS2UQ_SER_4