Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX4N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package QUICK REFERENCE DATA d VDSS = 600 V ID = 2.4 A g RDS(ON) ≤ 2.5 Ω s GENERAL DESCRIPTION PINNING N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. PIN SOT186A DESCRIPTION case 1 gate 2 drain 3 source case isolated The PHX4N60E is supplied in the SOT186A full pack, isolated package. 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS VDGR VGS ID Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ IDM PD Tj, Tstg Pulsed drain current Total dissipation Operating junction and storage temperature range - 55 600 600 ± 30 2.4 1.5 18 35 150 V V V A A A W ˚C MIN. MAX. UNIT - 295 mJ - 9 mJ - 4.5 A Ths = 25 ˚C; VGS = 10 V Ths = 100 ˚C; VGS = 10 V Ths = 25 ˚C Ths = 25 ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR CONDITIONS Non-repetitive avalanche energy Unclamped inductive load, IAS = 3.2 A; tp = 0.24 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 4.5 A; tp = 2.5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current 1 pulse width and repetition rate limited by Tj max. December 1998 1 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX4N60E ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - - 10 MAX. UNIT 2500 V - pF THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs with heatsink compound Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient MIN. TYP. MAX. UNIT - - 3.6 K/W - 55 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. V(BR)DSS VGS = 0 V; ID = 0.25 mA 600 - - V VDS = VGS; ID = 0.25 mA - 0.1 - %/K 2.0 2 - 2.1 3.0 3.4 2 50 10 2.5 4.0 100 500 200 Ω V S µA µA nA Drain-source breakdown voltage ∆V(BR)DSS / Drain-source breakdown ∆Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS(TO) Gate threshold voltage gfs Forward transconductance IDSS Drain-source leakage current TYP. MAX. UNIT IGSS VGS = 10 V; ID = 2.25 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 2.25 A VDS = 600 V; VGS = 0 V VDS = 480 V; VGS = 0 V; Tj = 125 ˚C Gate-source leakage current VGS = ±30 V; VDS = 0 V Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 4.5 A; VDD = 480 V; VGS = 10 V - 48 4 24 60 6 30 nC nC nC td(on) tr td(off) tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 300 V; RD = 68 Ω; RG = 12 Ω - 12 33 82 36 - ns ns ns ns Ld Ls Internal drain inductance Internal source inductance Measured from drain lead to centre of die Measured from source lead to source bond pad - 4.5 7.5 - nH nH Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 600 80 46 - pF pF pF December 1998 2 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX4N60E SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IS Ths = 25˚C - - 4.5 A Ths = 25˚C - - 18 A VSD Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage IS = 4.5 A; VGS = 0 V - - 1.2 V trr Qrr Reverse recovery time Reverse recovery charge IS = 4.5 A; VGS = 0 V; dI/dt = 100 A/µs - 480 4 - ns µC ISM December 1998 MIN. 3 TYP. MAX. UNIT Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated Normalised Power Derating PD% 120 PHX4N60E 10 with heatsink compound 110 PHX2N60 Zth j-hs, Transient thermal impedance (K/W) D = 0.5 100 90 1 0.2 80 70 60 0.1 0.1 0.05 0.02 50 40 30 PD 0.01 20 t D= p T tp single pulse 10 t T 0 0 20 40 60 80 Ths / C 100 120 0.001 1us 140 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ths) 12 1s 100ms ID, Drain current (Amps) PHP3N60 Tj = 25 C with heatsink compound 110 100us 1ms 10ms tp, pulse width (s) Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Normalised Current Derating ID% 120 10us 100 90 10 80 70 8 60 6 7V 10 V 6V 5.5 V 50 40 5V 4 30 20 VGS = 4.5 V 2 10 0 0 20 40 60 80 Ths / C 100 120 0 140 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V 100 ID, Drain current (Amps) = N) VD PHX2N60 10 15 20 25 VDS, Drain-Source voltage (Volts) 30 /ID PHP3N60 RDS(on), Drain-Source on resistance (Ohms) 4.5 V VGS = 5 V 6 5 Tj = 25 C 5.5 V tp = 10 us O S( 5 Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS S 10 0 4 RD 100 us 1 6V 3 1 ms DC 10 ms 10 V 2 100 ms 0.1 1 0.01 1 10 100 1000 VDS, Drain-source voltage (Volts) 0 10000 Fig.3. Safe operating area. Ths = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp December 1998 0 2 4 6 8 ID, Drain current (Amps) 10 12 Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS 4 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX4N60E ID, Drain current (Amps) 12 VGS(TO) / V PHP3N60 VDS > ID x RDS(on)max max. 4 10 typ. 3 8 min. 6 2 4 1 Tj = 150 C 2 Tj = 25 C 0 0 0 2 4 6 VGS, Gate-Source voltage (Volts) 8 -60 10 gfs, Transconductance (S) -20 0 20 40 60 Tj / C 80 100 120 140 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj 6 -40 PHP3N60 1E-01 SUB-THRESHOLD CONDUCTION ID / A VDS > ID x RDS(on)max 5 1E-02 Tj = 25 C 4 150 C 2% 1E-03 typ 98 % 3 1E-04 2 1E-05 1 0 1E-06 0 2 4 6 ID, Drain current (A) 8 0 10 Fig.8. Typical transconductance. gfs = f(ID); parameter Tj 2 VGS / V 3 4 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Normalised RDS(ON) = f(Tj) a 1 1000 PHP3N60 Junction capacitances (pF) Ciss 2 100 1 Coss Crss 0 -60 -40 -20 0 20 40 60 Tj / C 80 10 100 120 140 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2.25 A; VGS = 10 V December 1998 1 10 100 VDS, Drain-Source voltage (Volts) 1000 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 5 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated 15 PHX4N60E VGS, Gate-Source voltage (Volts) PHP3N60 20 ID = 4.5 A Tj = 25 C PHP3N60 IF, Source-Drain diode current (Amps) VGS = 0 V 240 V 15 120 V 10 VDD = 480 V 10 150 C Tj = 25 C 5 5 0 0 10 20 30 40 50 Qg, Gate charge (nC) 60 0 70 0.2 0.4 0.6 0.8 1 VSDS, Source-Drain voltage (Volts) 1.2 1.4 Fig.16. Source-Drain diode characteristic. IF = f(VSDS); parameter Tj Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); parameter VDS 1000 0 PHP3N60 Switching times (ns) VDD = 300 V VGS = 10 V RD = 68 Ohms Tj = 25 C Non-repetitive Avalanche current, IAS (A) 10 25 C Tj prior to avalanche = 125 C 100 1 td(off) VDS tf tp tr 10 ID 0.1 1E-06 td(on) 0 10 20 30 40 RG, Gate resistance (Ohms) 50 1E-05 60 1E-04 1E-03 1E-02 Avalanche time, tp (s) Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG) 1.15 PHP4N60E Fig.17. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tp); unclamped inductive load Normalised Drain-source breakdown voltage V(BR)DSS @ Tj V(BR)DSS @ 25 C 10 1.1 Maximum Repetitive Avalanche Current, IAR (A) Tj prior to avalanche = 25 C 1.05 1 1 125 C 0.1 0.95 0.9 0.85 -100 PHP4N60E 0.01 1E-06 -50 0 50 Tj, Junction temperature (C) 100 150 1E-04 1E-03 1E-02 Avalanche time, tp (s) Fig.15. Normalised drain-source breakdown voltage; V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj) December 1998 1E-05 Fig.18. Maximum permissible repetitive avalanche current (IAR) versus avalanche time (tp) 6 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX4N60E MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.19. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". December 1998 7 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX4N60E DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 8 Rev 1.200