PHILIPS PBSS306PZ

PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
Rev. 01 — 20 September 2006
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS306NZ.
1.2 Features
n
n
n
n
n
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
n
n
n
n
n
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
−100
V
IC
collector current
-
-
−4.1
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
-
−8.2
A
RCEsat
collector-emitter saturation
resistance
IC = −4 A;
IB = −400 mA
-
56
80
mΩ
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[1]
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
collector
3
emitter
4
collector
Simplified outline
Symbol
4
2, 4
1
1
2
3
3
sym028
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
PBSS306PZ
SC-73
plastic surface-mounted package with increased heatsink; SOT223
4 leads
Version
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS306PZ
S306PZ
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
2 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−100
V
VCEO
collector-emitter voltage
open base
-
−100
V
VEBO
emitter-base voltage
open collector
-
−5
V
IC
collector current
-
−4.1
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
−8.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
0.7
W
[2]
-
1.7
W
[3]
-
2.0
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa560
2.5
Ptot
(W)
2.0
(1)
(2)
1.5
1.0
(3)
0.5
0
−75
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
3 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
Rth(j-sp)
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
179
K/W
[2]
-
-
74
K/W
[3]
-
-
63
K/W
-
-
15
K/W
thermal resistance from
junction to solder point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa561
103
Zth(j-a)
(K/W)
δ=1
102
0.75
0.50
0.33
10
0.20
0.10
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
4 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
102
006aaa562
δ=1
0.75
Zth(j-a)
(K/W)
0.50
0.20
10
0.33
0.10
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa563
102
δ=1
0.75
Zth(j-a)
(K/W)
0.50
0.20
0.33
10
0.10
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
5 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −80 V; IE = 0 A
-
-
−100
nA
VCB = −80 V; IE = 0 A;
Tj = 150 °C
-
-
−50
µA
-
-
−100
nA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
hFE
DC current gain
VCE = −2 V; IC = −0.5 A
[1]
200
300
-
VCE = −2 V; IC = −1 A
[1]
150
260
-
VCE = −2 V; IC = −2 A
[1]
100
175
-
VCE = −2 V; IC = −4 A
[1]
25
40
-
IC = −0.5 A; IB = −50 mA
[1]
-
−45
−65
mV
IC = −1 A; IB = −50 mA
[1]
-
−90
−130
mV
IC = −4 A; IB = −400 mA
[1]
-
−225
−320
mV
IC = −4.1 A; IB = −410 mA
[1]
-
−230
−325
mV
-
56
80
mΩ
VCEsat
collector-emitter
saturation voltage
RCEsat
collector-emitter
saturation resistance
IC = −4 A; IB = −400 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = −1 A; IB = −100 mA
[1]
-
−0.81 −0.9
V
IC = −4 A; IB = −400 mA
[1]
-
−0.93 −1.05
V
VBEon
base-emitter turn-on
voltage
VCE = −2 V; IC = −2 A
[1]
-
−0.78 −0.85
V
td
delay time
-
15
-
ns
tr
rise time
-
185
-
ns
ton
turn-on time
VCC = −12.5 V; IC = −3 A;
IBon = −0.15 A;
IBoff = 0.15 A
-
200
-
ns
ts
storage time
-
150
-
ns
tf
fall time
-
175
-
ns
toff
turn-off time
-
325
-
ns
fT
transition frequency
VCE = −10 V; IC = −100 mA;
f = 100 MHz
-
100
-
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
-
50
80
pF
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
6 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
006aaa645
600
hFE
(1)
006aaa651
−14
IC
(A)
−12
IB (mA) = −1015
−10
−870
400
−580
−8
(2)
−290
(3)
−435
−145
−6
200
−725
−4
−2
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
006aaa646
−1.2
VBE
(V)
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
006aaa649
−1.2
VBEsat
(V)
−0.8
−0.8
(1)
(1)
(2)
(2)
−0.4
0
−10−1
−0.4
(3)
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
0
−10−1
(3)
−1
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS306PZ_1
Product data sheet
−10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
7 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
006aaa647
−10
VCEsat
(V)
VCEsat
(V)
−1
−1
−10−1
006aaa648
−10
−10−1
(1)
(2)
(3)
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
−10−2
−10−1
−1
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa650
103
−103
−104
IC (mA)
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
RCEsat
(Ω)
102
102
10
10
1
1
(1)
(2)
(3)
10−1
−1
−10
−102
006aaa652
103
RCEsat
(Ω)
(1)
(2)
(3)
10−1
−103
−104
IC (mA)
10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS306PZ_1
Product data sheet
−102
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
10−2
−10−1
−10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
8 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
8. Test information
− IB
input pulse
(idealized waveform)
90 %
− I Bon (100 %)
10 %
− I Boff
output pulse
(idealized waveform)
− IC
90 %
− I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig 13. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A
Fig 14. Test circuit for switching times
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
9 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
2.3
4.6
3
0.8
0.6
Dimensions in mm
0.32
0.22
04-11-10
Fig 15. Package outline SOT223 (SC-73)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBSS306PZ
[1]
Package
SOT223
Description
8 mm pitch, 12 mm tape and reel
1000
4000
-115
-135
For further information and the availability of packing methods, see Section 14.
PBSS306PZ_1
Product data sheet
Packing quantity
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
10 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
11. Soldering
7.00
3.85
3.60
3.50
0.30
1.20
(4 ×)
4
7.40
3.90 4.80 7.65
1
2
3
1.20 (3 ×)
1.30 (3 ×)
5.90
6.15
solder lands
occupied area
solder paste
solder resist
Dimensions in mm
sot223_fr
Fig 16. Reflow soldering footprint
8.90
6.70
4
4.30 8.10 8.70
1
1.90 (2×)
2
3
1.10
7.30
transport direction during soldering
solder lands
occupied area
solder resist
Dimensions in mm
sot223_fw
Fig 17. Wave soldering footprint
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
11 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS306PZ_1
20060920
Product data sheet
-
-
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
12 of 14
PBSS306PZ
Philips Semiconductors
100 V, 4.1 A PNP low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
PBSS306PZ_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 September 2006
13 of 14
Philips Semiconductors
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected]
Date of release: 20 September 2006
Document identifier: PBSS306PZ_1