2N7002KA N-channel TrenchMOS FET Rev. 02 — 25 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features n Logic level compatible n Very fast switching n Subminiature surface-mounted package n Gate-source ESD protection diodes 1.3 Applications n Relay driver n High-speed line driver 1.4 Quick reference data n VDS ≤ 60 V n RDSon ≤ 4.4 Ω n ID ≤ 300 mA n Ptot ≤ 0.83 W 2. Pinning information Table 1. Pinning Pin Description 1 gate (G) 2 source (S) 3 drain (D) Simplified outline Symbol D 3 G 1 2 SOT23 (TO-236AB) S 003aac036 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2. Ordering information Type number 2N7002KA Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 60 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage - ±15 V VGSM peak gate-source voltage tp ≤ 50 µs; pulsed; duty cycle = 25 % - ±40 V ID drain current Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3 - 320 mA Tsp = 100 °C; VGS = 10 V; see Figure 2 - 200 mA A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 1.28 Tsp = 25 °C; see Figure 1 Ptot total power dissipation - 0.83 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source current Tsp = 25 °C - 300 mA ISM peak source current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 1.2 A 2N7002KA_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 2 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 003aab946 120 003aac033 120 Pder (%) Ider ( %) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 Tsp (°C) 150 200 Tsp (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) ID I der = -------------------- × 100 % I D ( 25°C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 003aab788 10 ID (A) Limit RDSon = VDS / ID tp = 10 µ s 1 100 µ s 1 ms 10-1 10 ms DC 100 ms 10-2 1 10 102 VDS (V) Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 2N7002KA_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 3 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter thermal resistance from junction to solder point Rth(j-sp) see Figure 4 [1] thermal resistance from junction to ambient Rth(j-a) [1] Conditions Min Typ Max Unit - - 150 K/W - 350 - K/W Mounted on a printed-circuit board; minimum footprint; vertical in still air. 003aab351 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 10 δ= P 0.05 tp T 0.02 single pulse t tp T 1 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 2N7002KA_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 4 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 60 75 - V Tj = −55 °C 55 - - V 16 22 - V Tj = 25 °C 1 2 - V Tj = 150 °C 0.6 - - V Tj = −55 °C - - 3.5 V Tj = 25 °C - 0.01 1 µA Tj = 150 °C - - 10 µA - 50 500 nA Tj = 25 °C - 2.8 4.4 Ω Tj = 150 °C - - 8.14 Ω VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8 - 3.8 5.3 Ω VGS = 0 V; VDS = 10 V; f = 1 MHz; see Figure 12 - 13 40 pF - 8 30 pF - 4 10 pF VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω - 3 10 ns - 9 15 ns Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V IG = ±1 mA; VDS = 0 V V(BR)GSS gate-source breakdown voltage VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 IDSS drain leakage current VDS = 48 V; VGS = 0 V IGSS gate leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA; see Figure 6 and 8 Dynamic characteristics Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance ton turn-on time toff turn-off time Source-drain diode VSD source-drain voltage IS = 300 mA; VGS = 0 V; see Figure 11 - 0.85 1.5 V trr reverse recovery time - 30 - ns Qr recovered charge IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 25 V - 30 - nC 2N7002KA_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 5 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 003aab352 1 10 ID (A) 5 003aab353 10000 VGS (V) = 4 RDSon (mΩ) 0.8 8000 4.5 4.5 0.6 6000 4 5 0.4 4000 10 VGS (V) = 3.5 0.2 2000 0 0 0 1 2 3 VDS (V) 4 0 Tj = 25 °C 0.2 0.4 0.6 0.8 ID (A) 1 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 003aab354 1 ID (A) 003aac034 2.4 a 0.8 1.8 0.6 1.2 0.4 Tj = 150 °C 25 °C 0.6 0.2 0 0 2 4 VGS (V) 6 0 −60 60 120 180 Tj (°C) Tj = 25 °C and 150 °C; VDS > ID × RDSon R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 2N7002KA_2 Product data sheet 0 © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 6 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 003aab101 3 VGS(th) (V) ID (A) max typ 2 10-4 min 1 0 -60 003aab100 10-3 min typ max 10-5 10-6 0 60 120 Tj (°C) 180 0 1 2 3 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature 003aab356 1 Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aac035 102 IS (A) 0.8 C (pF) 0.6 Ciss 10 0.4 Coss Crss 0.2 Tj = 25 °C 150 °C 0 0.2 0.4 0.6 0.8 VSD (V) 1 Tj = 25 °C and 150 °C; VGS = 0 V 1 10−1 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Source current as a function of source-drain voltage; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 2N7002KA_2 Product data sheet 1 © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 7 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 7. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 13. Package outline SOT23 (TO-236AB) 2N7002KA_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 8 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status 2N7002KA_2 20070925 Product data sheet Modifications: 2N7002KA_1 • Supersedes 2N7002KA_1 The Symbol graphic in Table 1 was updated. 20070605 Product data sheet 2N7002KA_2 Product data sheet Change notice - - © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 9 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] 2N7002KA_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 02 — 25 September 2007 10 of 11 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 September 2007 Document identifier: 2N7002KA_2