DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. • diffused emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at rated load power, without an external heatsink, when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance in a common-emitter class-B circuit MODE OF OPERATION narrow band; CW T °C VCE V f MHz PL W Gp dB Tmb = 25 ηC % 12.5 900 2 > 6.5 > 50 Ta = 25(1) 12.5 900 1.5 > 6.5 > 50 Ta = 25(1) 9.6 900 1.5 typ. 6.6 typ. 60 Note 1. Device mounted on a printed-circuit board (see Fig.6). PIN CONFIGURATION PINNING - SOT172D. PIN handbook, halfpage 1 DESCRIPTION 1 emitter 2 base 3 collector 4 emitter 3 2 4 Top view MSB007 Fig.1 Simplified outline. SOT172D. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. September 1988 2 Philips Semiconductors Product specification UHF power transistor BLV91/SL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) VCBO max. 36 V Collector-emitter voltage (open base) VCEO max. 16 V Emitter-base voltage (open collector) VEBO max. 3 V DC or average IC; IC(AV) max. 0.4 A (peak value); f > 1 MHz ICM max. 1.2 A Ptot(RF) max. 6 W Collector current Total power dissipation f > 1 MHz; Tmb ≤ 90 °C Storage temperature Tstg Operating junction temperature Tj −65 to + 150 °C max. 200 °C MDA398 10 handbook, halfpage Ptot(rf) (W) II 8 I 6 4 2 0 0 40 80 120 160 Tmb (°C) I Continuous RF operation (f > 1 MHz) II Short-time RF operation during mismatch (f > 1 MHz) Fig.2 Power/temperature curve. THERMAL RESISTANCE Dissipation = 4.5 W From junction to ambient(1) (f > 1 MHz) Ta = 25 °C Rth j-a (RF) max. 55 K/W Rth j-mb (RF) max. 15 K/W From junction to mounting base Tmb = 25 °C (f > 1 MHz) Note 1. Device mounted on a printed-circuit board (see Fig.6). September 1988 3 Philips Semiconductors Product specification UHF power transistor BLV91/SL CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 5 mA V(BR)CBO > 36 V V(BR)CEO > 16 V V(BR)EBO > 3 V ICES < 2.5 mA ESBR > 0.55 mJ hFE > 25 CC typ. 3.5 pF Cre typ. 2.0 pF Cc-mb typ. 0.5 pF Collector-emitter breakdown voltage open base; IC = 10 mA Emitter-base breakdown voltage open collector; IE = 0.5 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain IC = 0.3 A; VCE = 10 V Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12.5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12.5 V Collector-mounting base capacitance MDA399 120 MDA400 8 handbook, halfpage handbook, halfpage Cc (pF) hFE 6 VCE = 12.5 V 80 10 V 4 40 2 0 0 0 0.3 0.6 0.9 IC (A) 1.2 0 Fig.3 Tj = 25 °C; typical values. September 1988 8 16 VCB (V) 24 Fig.4 IE = ie = 0; f = 1 MHz; typical values. 4 Philips Semiconductors Product specification UHF power transistor BLV91/SL APPLICATION INFORMATION RF performance in CW operation (common-emitter circuit; class-B): f = 900 MHz PL W VCE V MODE OF OPERATION narrow band; CW ηC % Gp dB 12.5 2 > 6.5 > 50 Tmb = 25 12.5 2 typ. 7.8 typ. 60 Tmb = 25 12.5 1.5 > 50 Ta = 25(2) 9.6 1.5 typ. 60 Ta = 25(2) > 6.5 typ. 6.6 L8 handbook, full pagewidth R1 C6 C7 L7 ,,,,,, ,,,,,,,,, C8 C5 50 Ω +VCC R2 L1 L2 C1 T °C L5 L3 C2 C3 T.U.T. L6 L9 C4 C11 L10 C9 50 Ω C10 MDA401 Fig.5 Class-B test circuit at f = 900 MHz. September 1988 5 Philips Semiconductors Product specification UHF power transistor BLV91/SL List of components: C1 = C11 = 33 pF multilayer ceramic chip capacitor C2 = C3 = C10 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001) C4 = C5 = 5.6 pF multilayer ceramic chip capacitor (1) C6 = 10 pF multilayer ceramic chip capacitor C7 = 330 pF multilayer ceramic chip capacitor C8 = 3.9 pF multilayer ceramic chip capacitor(1) C9 = 1.2 to 3.5 pF film dielectric trimmer (cat. no. 2222 809 05001) L1 = L8 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642) L2 = 60 nH; 4 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2 × 5 mm L3 = 50 Ω stripline (25.4 mm × 2.4 mm) L4 = 50 Ω stripline (4.4 mm × 2.4 mm) L5 = L6 = 34 Ω stripline (14.0 mm × 4.0 mm) L7 = 280 nH; 15 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2 × 5 mm L9 = 50 Ω stripline (24.8 mm × 2.4 mm) L10 = 50 Ω stripline (30.5 mm × 2.4 mm) R1 = R2 = 10 Ω ± 5%; 0.25 W metal film resistor L3, L4, L5, L6, L9 and L10 are striplines on a double Cu-clad printed-circuit board with P.T.F.E. fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch; thickness of copper-sheet 2 × 35 µm. Notes 1. American Technical Ceramics capacitor type 100A or capacitor of same quality. 2. Device mounted on a printed-circuit board (see Fig.6). September 1988 6 Philips Semiconductors Product specification UHF power transistor BLV91/SL 140 mm handbook, full pagewidth copper straps 80 mm M2 rivets M2 +VCC L8 L1 C6 C7 R2 R1 L7 L2 C2 C3 E C5 L5 B C4 C1 L3 L4 C8 C L6 L9 C10 L10 C11 E C9 MDA402 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as groundplane. Earth connections are made by hollow rivets and also by fixing-screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the groundplane. Fig.6 Printed-circuit board and component lay-out for 900 MHz class-B test circuit. September 1988 7 Philips Semiconductors Product specification UHF power transistor BLV91/SL MDA403 4 MDA404 10 Gp handbook, halfpage handbook, halfpage PL (W) (dB) 8 Gp 100 ηC (%) 80 3 6 60 ηC 2 4 40 2 20 1 0 0 0 200 400 800 600 PS (mW) 0 0 1 2 f = 900 MHz; class-B operation; typical values. Tmb = 25 °C; VCE = 12.5 V; − − − − Ta = 25 °C; VCE = 12.5 V; - - - - Ta = 25 °C; VCE = 9.6 V f = 900 MHz; class-B operation; typical values. Tmb = 25 °C; VCE = 12.5 V; − − − − Ta = 25 °C; VCE = 12.5 V; - - - - Ta = 25 °C; VCE = 9.6 V Fig.7 Fig.8 Load power as a function of source power. RUGGEDNESS The device is capable to withstand a full load mismatch (VSWR = 50; all phases) at PL = 1.5 W up to a supply voltage of 15.5 V at Ta = 25 °C. Device mounted on a printed-circuit board (see Fig.6). September 1988 8 PL (W) 3 Power gain and efficiency as a function of load power. Philips Semiconductors Product specification UHF power transistor BLV91/SL MDA405 5 MDA406 20 ZL handbook, halfpage handbook, halfpage Zi (Ω) ri 4 xi 3 RL (Ω) 18 16 2 14 XL 1 0 800 12 850 900 950 10 800 1000 f (MHz) VCE = 12.5 V; PL = 2 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. MDA407 (dB) 8 6 4 2 850 900 950 1000 f (MHz) VCE = 12.5 V; PL = 2 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. Fig.11 Power gain as a function of frequency. September 1988 920 960 1000 f (MHz) Fig.10 Load impedance (series components). handbook, halfpage 0 800 880 VCE = 12.5 V; PL = 2 W; f = 800 - 960 MHz; Tmb = 25 °C; class-B operation; typical values. Fig.9 Input impedance (series components). 10 Gp 840 9 Philips Semiconductors Product specification UHF power transistor BLV91/SL PACKAGE OUTLINE Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 H Q mm 3.71 2.89 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 26.17 24.63 1.15 0.88 inches 0.146 0.114 0.13 0.12 0.035 0.006 0.025 0.004 0.205 0.210 0.195 0.200 1.03 0.97 0.045 0.035 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-06-28 SOT172D September 1988 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification UHF power transistor BLV91/SL DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1988 11