DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. • multi-base structure and emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic cap (SOT-122D). All leads are isolated from the mounting base. QUICK REFERENCE DATA R.F. performance in a common-emitter class-B circuit. MODE OF OPERATION T °C Tmb = 25 narrow band; c.w. Ta = 25(1) VCE V f MHz PL W Gp dB ηC % 12,5 470 2,5 > 10 > 55 12,5 470 1,5 > 12 > 55 Note 1. Device mounted on a printed wiring board (see Fig.6). PIN CONFIGURATION PINNING - SOT122D. PIN handbook, halfpage 4 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 MSB055 Fig.1 Simplified outline. SOT122D. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. July 1986 2 Philips Semiconductors Product specification UHF power transistor BLU11/SL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) VCBO max. 36 V Collector-emitter voltage (open base) VCEO max. 16 V Emitter-base voltage (open collector) VEBO max. 3 V d.c. or average IC; IC(AV) max. 0,4 A (peak value), f > 1 MHz ICM max. 1,2 A Ptot(rf) max. 6 W Collector current Total power dissipation at Tmb ≤ 90 °C; f > 1 MHz Storage temperature Tstg Operating junction temperature Tj −65 to +150 °C max. 200 °C MDA306 10 handbook, halfpage Ptot(rf) (W) II 8 I 6 4 2 0 0 40 80 120 160 Tmb (°C) I Continuous r.f. operation (f > 1 MHz) II Short-time r.f. operation during mismatch (f > 1 MHz) Fig.2 Power/temperature derating curves. THERMAL RESISTANCE Dissipation = 4,5 W From junction to ambient(1) at Ta = 25 °C; f > 1 MHz (r.f. operation) Rth j-a (rf) max. 50 K/W Rth j-mb (rf) max. 15 K/W From junction to mounting base at Tmb = 25 °C; f > 1 MHz (r.f. operation) Note 1. Device mounted on a printed wiring board (see Fig.6). July 1986 3 Philips Semiconductors Product specification UHF power transistor BLU11/SL CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 5 mA V(BR)CBO min. 36 V V(BR)CEO min. 16 V V(BR)EBO min. 3 V ICES max. 2,5 mA ESBR min. 0,55 mJ hFE min. Cc typ. 4 pF Cre typ. 2,5 pF Cc-mb typ. 1,2 pF Collector-emitter breakdown voltage open base; IC = 10 mA Emitter-base breakdown voltage open collector; IE = 0,5 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain IC = 0,3 A; VCE = 10 V 25 Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-mounting base capacitance MDA307 120 MDA308 10 Cc handbook, halfpage handbook, halfpage (pF) 8 hFE 80 VCE = 12.5 V 6 10 V 4 40 2 0 0 0 400 800 IC (mA) 0 1200 Fig.3 Tj = 25 °C; typical values. July 1986 4 8 12 16 20 VCB (V) Fig.4 IE = ie = 0; f = 1 MHz; typical values. 4 Philips Semiconductors Product specification UHF power transistor BLU11/SL APPLICATION INFORMATION R.F. performance in common-emitter circuit; class-B; f = 470 MHz; circuit tuned at PL = 2,5 W. T °C VCE V f MHz PL W Tmb = 25 12,5 470 2,5 MODE OF OPERATION narrow band; c.w. Tmb = 25 Ta = 25(2) 12,5 470 1,5 L5 handbook, full pagewidth C6 ,,,,,, ,,, ,,,,,, ,,, ηC % Gp dB > 10 > 55 typ. 12 typ. 60 > 12 > 55 +VCC R2 C7 C5 L4 C3 C1 50 Ω R1 L2 L1 C2 T.U.T. L3 L6 C4 C9 50 Ω C8 Fig.5 Class-B test circuit at f = 470 MHz. MDA309 List of components: C1 = C2 = 2-9 pF film dielectric trimmer (cat. no. 2222 809 09002) C3 = 1,6 pF multilayer ceramic chip capacitor(1) C4 = 10 pF multilayer ceramic chip capacitor(1) C5 = 100 pF multilayer ceramic chip capacitor C6 = 3 × 100 nF multilayer ceramic chip capacitor (cat. no. 2222 809 47104) C7 = 2,2 µF (35 V) tantalum electrolytic capacitor C8 = 1,4 - 55 pF film dielectric trimmer (cat. no. 2222 809 09001) C9 = 5,6 pF multilayer ceramic chip capacitor(1) L1 = 56 Ω stripline (25,5 mm × 2 mm) L2 = L3 = 25 Ω stripline (11 mm × 6 mm) L4 = 132 nH; 6 turns closely wound enamelled Cu-wire (1 mm), int. dia. 6 mm, leads 2 × 5 mm L5 = Ferroxcube h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = 16 nH; 1 turn enamelled Cu-wire (1 mm), int. dia. 6 mm, leads 2 × 5 mm R1 = 10 Ω; ± 5% 0,4 W metal film resistor R2 = 10 Ω; ± 5% 0,4 W metal film resistor L1, L4 and L5 are striplines on a double Cu-clad printed wiring board with PTFE fibre-glass dielectric (εr = 2,2) and a thickness 1⁄32 inch; thickness of copper-sheet 2 × 35 µm. Notes 1. American Technical Ceramics capacitor type B or capacitor of the same quality. 2. Device mounted on a printed wiring board (see Fig.6). July 1986 5 Philips Semiconductors Product specification UHF power transistor BLU11/SL 108 handbook, full pagewidth copper straps 70 M2 rivets M3 +VCC L5 R2 C7 C5 C6 L4 C1 C3 R1 L1 L2 L3 C9 L6 C4 C8 C2 MDA310 The circuit and the components are situated on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as a groundplane. Earth connections are made by using hollow rivets, fixing-screws and copper straps at the input and output and under the two emitters to provide a direct contact between the copper on the component side and the groundplane. Dimensions in mm. Fig.6 Printed wiring board and component lay-out for 470 MHz class-B test circuit. July 1986 6 Philips Semiconductors Product specification UHF power transistor BLU11/SL MDA311 4 MDA312 20 Gp (dB) handbook, halfpage 100 ηC handbook, halfpage PL (W) (%) 16 80 3 Gp 60 12 ηC 2 8 40 4 20 1 0 0 0 0.1 0.2 0.3 PS (W) VCE = 12,5 V; f = 470 MHz; Tmb = 25 °C; class-B operation; test circuit tuned at PL = 2,5 W; typical values. 1.5 2 2.5 PL (W) 3 VCE = 12,5 V; f = 470 MHz; Tmb = 25 °C; class-B operation; test circuit tuned at PL = 2,5 W; typical values. Fig.7 Load power versus source power. Fig.8 RUGGEDNESS The BLU11/SL is capable of withstanding a full load mismatch (VSWR = 50 through all phases) at PL = 2,5 W up to a supply voltage of 15,5 V at Tmb = 25 °C. Input and output impedances (series components) versus frequency: VCE = 12,5 V; PL = 2,5 W; f = 400 to 512 MHz; Tmb = 25 °C; class-B operation; typical values. FREQUENCY (MHz) Zi (Ω) Zo (Ω) 400 4,0 − j 4,1 13,1 + j 7,2 430 4,0 − j 3,3 13,3 + j 7,0 460 4,0 − j 2,6 13,6 + j 6,9 490 4,1 − j 1,9 13,8 + j 6,8 512 4,1 − j 1,5 13,8 + j 6,7 July 1986 0 1 7 Power gain and efficiency versus load power. Philips Semiconductors Product specification UHF power transistor BLU11/SL PACKAGE OUTLINE Studless ceramic package; 4 leads SOT122D D A Q c D2 H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 H L Q α mm 4.17 3.27 5.85 5.58 0.18 0.14 7.50 7.23 7.24 6.98 27.56 25.78 9.91 9.14 1.58 1.27 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122D July 1986 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification UHF power transistor BLU11/SL DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1986 9