PHILIPS PBSS8110S

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PBSS8110S
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
Supersedes data of 2003 Nov 11
2004 Aug 13
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110S
QUICK REFERENCE DATA
FEATURES
• SOT54 package
SYMBOL
• Low collector-emitter saturation voltage VCEsat
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
100
V
• High collector current capability: IC and ICM
IC
collector current (DC)
1
A
• Higher efficiency leading to less heat generation.
ICM
peak collector current
3
A
RCEsat
equivalent on-resistance
200
mΩ
APPLICATIONS
• Automotive 42 V power
PINNING
• Telecom infrastructure
PIN
• General industrial applications
• Power management
– DC/DC converters
DESCRIPTION
1
base
2
collector
3
emitter
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Generic driver (e.g. lamps and LEDs)
– Inductive load driver (e.g. relays,
buzzers and motors).
handbook, halfpage1
2
2
3
1
DESCRIPTION
MAM259
NPN low VCEsat BISS transistor in a SOT54 plastic
package.
3
MARKING
TYPE NUMBER
MARKING CODE
PBSS8110S
Fig.1 Simplified outline (SOT54) and symbol.
S8110S
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
PBSS8110S
2004 Aug 13
NAME
DESCRIPTION
VERSION
−
plastic single-ended leaded (through hole) package; 3 leads
SOT54
2
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
120
V
VCEO
collector-emitter voltage
open base
−
100
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
3
A
IB
base current (DC)
−
300
mA
Ptot
total power dissipation
−
830
mW
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Tj max
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air; note 1
VALUE
UNIT
150
K/W
Note
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2004 Aug 13
3
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110S
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
TYP.
MAX.
VCB = 80 V; IE = 0
−
−
100
nA
VCB = 80 V; IE = 0; Tj = 150 °C
−
−
50
µA
VCE = 80 V; VBE = 0
−
−
100
nA
nA
ICES
collector cut-off current
IEBO
emitter cut-off current
VEB = 4 V; IC = 0
−
−
100
hFE
DC current gain
VCE = 10 V; IC = 1 mA
150
−
−
VCE = 10 V; IC = 250 mA
150
−
500
VCEsat
collector-emitter saturation
voltage
UNIT
VCE = 10 V; IC = 0.5 A; note 1
100
−
−
VCE = 10 V; IC = 1 A; note 1
80
−
−
IC = 100 mA; IB = 10 mA
−
−
40
mV
IC = 500 mA; IB = 50 mA
−
−
120
mV
IC = 1 A; IB = 100 mA
−
−
200
mV
RCEsat
equivalent on-resistance
IC = 1 A; IB = 100 mA; note 1
−
165
200
mΩ
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA; note 1
−
−
1.05
V
VBEon
base-emitter turn-on voltage
VCE = 10 V; IC = 1 A
−
−
0.9
V
fT
transition frequency
VCE = 10 V; IC = 50 mA; f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
7.5
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Aug 13
4
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110S
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Aug 13
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-06-28
Philips Semiconductors
Product specification
100 V, 1 A
NPN low VCEsat (BISS) transistor
PBSS8110S
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Aug 13
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp7
Date of release: 2004
Aug 13
Document order number:
9397 750 13642